公开(公告)号：CA1281307C

公开(公告)日：1991-03-12

申请号：CA502807

申请日：1986-02-26

Applicant: IBM

Inventor： BABU SURYADEVARA V ,  HOFFARTH JOSEPH G ,  KNOLL ALLAN R ,  MLYNKO WALTER E ,  REMBETSKI JOHN F

IPC: H01L21/302 ,  C09K13/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  C23C14/34 ,  B01J19/08

Abstract: A plasma etching process is disclosed wherein the substrate to be etched is first exposed to an etchant gas containing a volatile organohalide. When the etch rate is stabilized, the organohalide in the etchant gas is replaced by oxygen whereby the etch rate of the substrate is immediately increased to a substantially higher value.