公开(公告)号：JPH1174197A

公开(公告)日：1999-03-16

申请号：JP19292198

申请日：1998-07-08

Applicant: IBM

Inventor： JAMES A BRUCE ,  STEPHEN J HORMES ,  LEIDY ROBERT K ,  MLYNKO WALTER E ,  EDWARD W SENGL

IPC: G03F7/004 ,  G03F1/00 ,  G03F7/095 ,  G03F7/20 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/76 ,  H01L21/762

Abstract: PROBLEM TO BE SOLVED: To enable regions to be demarcated through a single masking step by a method, wherein a hybrid resist is irradiated with an actinic radiation energy to expose a first region on a mask, and a second region is exposed on the mask by uniform exposure. SOLUTION: An oxide layer and a nitride layer are formed on a wafer, and a hybrid resist layer is attached, exposed to light through a mask, and developed to form a space (302 to 308). The nitride layer is etched through the space (310), uniform exposure and development are carried out (312), and silicon is etched to the hybrid resist and the nitride layer to form an STI region (314). Then, the exposed nitride and the oxide are removed, a silicon dioxide layer is attached to an unblocked silicon, the nitride is etched (316 to 322), a nitride spacer is formed in an edge STI region, silicon dioxide is attached, a wafer is planarized and the residual nitride and the oxide are removed (324 to 330).

公开(公告)号：CA1281307C

公开(公告)日：1991-03-12

申请号：CA502807

申请日：1986-02-26

Applicant: IBM

Inventor： BABU SURYADEVARA V ,  HOFFARTH JOSEPH G ,  KNOLL ALLAN R ,  MLYNKO WALTER E ,  REMBETSKI JOHN F

IPC: H01L21/302 ,  C09K13/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  C23C14/34 ,  B01J19/08

Abstract: A plasma etching process is disclosed wherein the substrate to be etched is first exposed to an etchant gas containing a volatile organohalide. When the etch rate is stabilized, the organohalide in the etchant gas is replaced by oxygen whereby the etch rate of the substrate is immediately increased to a substantially higher value.

公开(公告)号：CA1314197C

公开(公告)日：1993-03-09

申请号：CA530786

申请日：1987-02-27

Applicant: IBM

Inventor： EGITTO FRANK D ,  EMMI FRANCIS ,  MLYNKO WALTER E ,  SUSKO ROBIN A

IPC: B08B3/08 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H05K3/00 ,  H05K3/08 ,  H05K3/26 ,  H05K3/42 ,  B23K10/00

Abstract: EN984-029 PROCESS FOR REMOVING CONTAMINANT Contaminant is removed from holes by etching in a gaseous plasma by first removing contaminant from the vicinity of the edges of the hole. Next, a mask is provided in the vicinity of the edges to prevent etching by contacting with a gaseous plasma which is different from the gaseous plasma employed in the first etching step. The holes are then etched in a gaseous plasma to remove contaminant from the interior of the holes in the vicinity of the center of the holes, whereby the mask protects the edges from being etched.