公开(公告)号：CA1281307C

公开(公告)日：1991-03-12

申请号：CA502807

申请日：1986-02-26

Applicant: IBM

Inventor： BABU SURYADEVARA V ,  HOFFARTH JOSEPH G ,  KNOLL ALLAN R ,  MLYNKO WALTER E ,  REMBETSKI JOHN F

IPC: H01L21/302 ,  C09K13/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  C23C14/34 ,  B01J19/08

Abstract: A plasma etching process is disclosed wherein the substrate to be etched is first exposed to an etchant gas containing a volatile organohalide. When the etch rate is stabilized, the organohalide in the etchant gas is replaced by oxygen whereby the etch rate of the substrate is immediately increased to a substantially higher value.

公开(公告)号：DE3788564T2

公开(公告)日：1994-06-30

申请号：DE3788564

申请日：1987-10-20

Applicant: IBM

Inventor： BABU SURYADEVARA V ,  JONES GERALD WALTER ,  LU NENG-HSING DR

IPC: C23C18/20 ,  C23C18/22 ,  C23C18/30 ,  H05K3/18 ,  H05K3/38

公开(公告)号：DE3788564D1

公开(公告)日：1994-02-03

申请号：DE3788564

申请日：1987-10-20

Applicant: IBM

Inventor： BABU SURYADEVARA V ,  JONES GERALD WALTER ,  LU NENG-HSING DR

IPC: C23C18/20 ,  C23C18/22 ,  C23C18/30 ,  H05K3/18 ,  H05K3/38

公开(公告)号：DE3869468D1

公开(公告)日：1992-04-30

申请号：DE3869468

申请日：1988-05-06

Applicant: IBM

Inventor： AGOSTINO PETER A ,  BABU SURYADEVARA V ,  HOFFARTH JOSEPH G

IPC: C23C18/16 ,  C04B41/53 ,  C23C18/31 ,  C23C18/34 ,  C23C18/40 ,  G03F7/00 ,  G03F7/42 ,  H05K3/10 ,  H05K3/18 ,  H05K3/26 ,  H05K3/22 ,  B29C71/04 ,  H05K3/08 ,  H05K3/02

Abstract: Residual catalyst is removed from a dielectric substrate by exposing the substrate to a plasma formed from an inert gas.