公开(公告)号：WO0229903A2

公开(公告)日：2002-04-11

申请号：PCT/GB0104336

申请日：2001-09-28

Applicant: IBM ,  IBM UK

Inventor： KWARK YOUNG HOON ,  MOY DAN ,  RITTER MARK ,  ROGERS DENNIS ,  WELSER JEFFREY JOHN

IPC: H01L27/146 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L29/861 ,  H01L31/00 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/10 ,  H01L31/101 ,  H01L31/105 ,  H01L31/0232

CPC classification number: H01L31/1804 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/03529 ,  H01L31/101 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor device (and method for forming the device) includes a silicon-on-insulator (SOI) wafer formed on a substrate surface. An isolation trench in the wafer surface surrounds alternating p-type trenches and n-type trenches and electrically isolates the device from the substrate, thereby allowing the device to be effectively utilized as a differential detector in an optoelectronic circuit.

Abstract translation: 半导体器件（以及用于形成器件的方法）包括在衬底表面上形成的绝缘体上硅（SOI）晶片。 晶片表面中的隔离沟槽围绕交替的p型沟槽和n型沟槽，并将器件与衬底电隔离，从而允许器件有效地用作光电子电路中的差分检测器。

公开(公告)号：AU9202901A

公开(公告)日：2002-04-15

申请号：AU9202901

申请日：2001-09-28

Applicant: IBM

Inventor： MOY DAN ,  RITTER MARK ,  ROGERS DENNIS ,  WELSER JEFFREY JOHN

IPC: H01L27/146 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L29/861 ,  H01L31/00 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/10 ,  H01L31/101 ,  H01L31/105 ,  H01L31/0232

Abstract: A semiconductor device (and method for forming the device) includes a silicon-on-insulator (SOI) wafer formed on a substrate surface. An isolation trench in the wafer surface surrounds alternating p-type trenches and n-type trenches and electrically isolates the device from the substrate, thereby allowing the device to be effectively utilized as a differential detector in an optoelectronic circuit.