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    Method of fabricating semiconductor structures with reduced crystallographic defects
    2.
    发明授权
    Method of fabricating semiconductor structures with reduced crystallographic defects 失效
    减少晶体缺陷造成半导体结构的方法

    公开(公告)号：US3644154A

    公开(公告)日：1972-02-22

    申请号：US3644154D

    申请日：1969-06-09

    Applicant: IBM

    Inventor： HOOGENDOORN CORNELIUS ,  MOODY MATTIE ,  SCHWUTTKE GUENTER H

    IPC: H01L21/673 ,  C30B31/12 ,  C30B31/14 ,  H01L21/22 ,  H01L7/44

    CPC classification number: C30B31/14 ,  C30B31/12 ,  Y10S148/006 ,  Y10S148/071

    Abstract: A method of fabricating semiconductor structures and devices with reduced crystallographic defects by supporting said wafers in close proximity to a substrate which serves to maintain a linear temperature gradient across the surface of the wafer. The wafer is positioned so that one entire surface thereof is less than one-fourth inch and may be flush against the substrate which has a heat capacity of at least 10 times that of the wafer. The wafer is maintained in this position whenever it is at a temperature above 850* C. The wafer is so maintained during both the periods when such high-heat processing is being carried out, as well as when the wafer is removed from the source of heat and being cooled. There is also provided a wafer holder having a plurality of spaced walls and means for supporting a plurality of wafers in the above-described positions between said walls.

    HIGH EFFICIENCY GETTERING IN SILICON THROUGH LOCALIZED SUPERHEATED MELT FORMATION
    7.
    发明专利
    HIGH EFFICIENCY GETTERING IN SILICON THROUGH LOCALIZED SUPERHEATED MELT FORMATION 未知

    公开(公告)号：CA1140683A

    公开(公告)日：1983-02-01

    申请号：CA360336

    申请日：1980-09-16

    Applicant: IBM

    Inventor： SCHWUTTKE GUENTER H ,  YANG KUEI-HSIUNG

    IPC: H01L21/268 ,  H01L21/322 ,  H01L21/477

    Abstract: High Efficiency Gettering in Silicon Through Localized Superheated Melt Formation A semiconductor wafer into which devices such as an integrated circuit is to be formed is gettered by regions in the wafer activated by a laser beam. The laser beam is directed onto the surface of the wafer opposite to that where the devices are to be formed. The power input to the laser is controlled such that the surface temperature of the region of the semiconductor wafer where the laser beam is applied first reaches the melting point of the material, such as silicon, and the melting commences. Then the temperature in the melt rises above the melting temperature, but stays below the boiling temperature of the material of the wafer. A superheated melt is formed. The result is that the solid-liquid interface moves deep into the material. The position of the melt is directly under the laser beam. The solidified material is positioned behind the beam as the beam scans the wafer. A depression is formed under the beam while the material rises behind the laser beam. This depression effect of the laser beam causes the beam to penetrate relatively deeply into the material. The superheated melt of this type has been found to be useful in the activation of internal gettering centers as opposed to crystal damage by a higher powered laser beam. These internal gettering centers, which may be oxygen complexes or the like, then act as gettering sites for unwanted impurities during subsequent heat treatment of the semiconductor wafer.

    IMPACT SOUND STRESSING FOR SEMICONDUCTOR DEVICES
    8.
    发明专利
    IMPACT SOUND STRESSING FOR SEMICONDUCTOR DEVICES 未知

    公开(公告)号：CA1066816A

    公开(公告)日：1979-11-20

    申请号：CA249221

    申请日：1976-03-30

    Applicant: IBM

    Inventor： SCHWUTTKE GUENTER H ,  YANG KUEI-HSIUNG

    IPC: H01L21/30

    Abstract: Methods of making semiconductor devices using the technique of impact sound stressing are disclosed. Impact sound stressing (ISS) is a mechanical acoustical technique to damage, in a known and controlled manner. semiconductor wafers. Wafers are subjected to ISS on the backsides before semiconductor processing steps. The application of ISS before the first high temperature application with control the generation and subsequent direction of flow (gradient) of vacancies (interstitials) generated through all device high temperature processing steps including ion implantation. ISS redirects the flow of vacancies/interstitials into the backside away from the device area of the wafer. Thus, the device area is swept clean in a gettering action of vacancy/interstitials and their complexes which are detrimental to device performance. The techniques of impact sound stressing finds application in improvement the performance of all semiconductor devices, specifically dynamic memories, bipolars, solar cells and power devices.

    Controlled damage of semiconductor surface - uses tungsten balls and acoustic vibration of wafer to cause damage for experimental testing
    9.
    发明专利
    Controlled damage of semiconductor surface - uses tungsten balls and acoustic vibration of wafer to cause damage for experimental testing 未知

    公开(公告)号：FR2344124A1

    公开(公告)日：1977-10-07

    申请号：FR7608561

    申请日：1976-03-12

    Applicant: IBM

    Inventor： SCHWUTTKE GUENTER H ,  YANG KUEI-HSIUNG

    IPC: H01L21/304 ,  H01L21/322 ,  H01L21/463

    Abstract: A method is described of inducing known and controlled damage on semiconductor wafer surfaces to enhance the study of damage characteristics both before and after semiconductor device processing. A number of tungsten balls (32) are placed on the surface to be damaged and the wafer (26) is subjected to acoustic vibration. The wafer is bolted (30) to the end of a P.V.C. tube having a loudspeaker driver at its other end. Ideally the loudspeaker emits noise tuned to the resonant frequency of the wafer. By placing two wafers in the tube, faces almost touching and with the balls between the surfaces, both surfaces can be damaged by the vibrating balls. Two loudspeakers may be used, one at each end of the tube and operating in antiphase. The damaged wafers may be used in device manufacture, employing the stress relieving property of the damaged surface during high temperature processes.

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