公开(公告)号：EP1866937A4

公开(公告)日：2010-09-29

申请号：EP06734927

申请日：2006-02-10

Applicant: IBM

Inventor： GOREN DAVID ,  PFEIFFER ULLRICH R ,  SHEINMAN BENNY ,  SHLAFMAN SHLOMO

IPC: H01F5/00 ,  H01F27/28 ,  H01L21/20 ,  H01L29/00

CPC classification number: H01L23/5223 ,  H01L23/5225 ,  H01L23/5286 ,  H01L23/645 ,  H01L2924/0002 ,  H01L2924/3011 ,  H03F3/26 ,  H03F3/45089 ,  H03F3/602 ,  H01L2924/00

公开(公告)号：JP2010157705A

公开(公告)日：2010-07-15

申请号：JP2009271786

申请日：2009-11-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： NAHMANNY DANNIEL ,  RAMM DOV ,  SHEINMAN BENNY

IPC: H01L21/82

CPC classification number: G06F17/5063

Abstract: PROBLEM TO BE SOLVED: To provide a useful method of migrating an analog or mixed signal electronic circuit from a source technology to a target technology. SOLUTION: Devices operating in current mode and their respective voltage tuning nodes are first identified in the source technology electronic circuit. Since a device operating in current mode is less sensitive to the voltage applied to its voltage tuning node, the voltage at the voltage tuning node can be changed to achieve better current mode device performance without interfering with the biasing conditions of other devices in the circuit. This enables a circuit designer to fully exploit the two available degrees of freedom (typically width and length) when migrating the electronic device operating in current mode from a source technology to a target technology. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供将模拟或混合信号电子电路从源技术迁移到目标技术的有用方法。 解决方案：首先在源技术电子电路中识别在当前模式下工作的器件及其各自的电压调谐节点。 由于在当前模式下工作的器件对施加到其电压调谐节点的电压较不敏感，所以可以改变电压调谐节点处的电压，以实现更好的电流模式器件性能，而不会妨碍电路中其他器件的偏置条件。 这使得电路设计人员能够在将以当前模式工作的电子设备从源技术迁移到目标技术时，充分利用两种可用的自由度（通常为宽度和长度）。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO2006110207A2

公开(公告)日：2006-10-19

申请号：PCT/US2006005013

申请日：2006-02-10

Applicant: IBM ,  GOREN DAVID ,  PFEIFFER ULLRICH R ,  SHEINMAN BENNY ,  SHLAFMAN SHLOMO

Inventor： GOREN DAVID ,  PFEIFFER ULLRICH R ,  SHEINMAN BENNY ,  SHLAFMAN SHLOMO

IPC: H01L29/00

CPC classification number: H01L23/5223 ,  H01L23/5225 ,  H01L23/5286 ,  H01L23/645 ,  H01L2924/0002 ,  H01L2924/3011 ,  H03F3/26 ,  H03F3/45089 ,  H03F3/602 ,  H01L2924/00

Abstract: Methods are provided for building integrated circuit transformer devices having compact universal and scalable architectures for millimeter wave applications. For example, an integrated circuit transformer (22) is formed on a semiconductor substrate (21) and includes a ground shield (23) formed on the substrate (21), a primary conductor (24) comprising an elongated conductive strip and a secondary conductor (25) comprising an elongated conductive strip. The primary conductor (24) and the secondary conductor (25) are aligned to form a coupled-wire structure that is disposed adjacent to the ground shield (23). The ground shield (23) comprises a pattern of close-ended parallel elongated slots (23a) and parallel conductive strips (23b) that are commonly connected at end portions thereof along edge regions (23c) of the ground shield (23). The slots (23a) and strips (23b) are disposed orthogonal to the primary (24) and secondary (25) conductors. The edge regions (23c) provide current return paths that are collinear to the primary (24) and secondary (25) conductors. The integrated circuit transformer (22) can be used as template or building block, which is parameterized by length, for constructing various integrated circuit devices and modular structures including, but not limited to, power amplifiers, n:l impendence transformers, and power combiners.

Abstract translation: 提供了用于构建具有用于毫米波应用的紧凑通用和可扩展架构的集成电路变压器设备的方法。 例如，集成电路变压器（22）形成在半导体衬底（21）上并且包括形成在衬底（21）上的接地屏蔽（23），包括细长导电条和次级导体 （25）包括细长导电条。 主导体（24）和次级导体（25）被对准以形成邻近接地屏蔽（23）设置的耦合线结构。 接地屏蔽（23）包括在接地屏蔽（23）的边缘区域（23c）处在其端部共同连接的近端平行细长槽（23a）和平行导电条（23b）的图案。 槽（23a）和条（23b）与主（24）和次（25）导体正交设置。 边缘区域（23c）提供与初级（24）和次级（25）导体共线的电流返回路径。 集成电路变压器（22）可以用作模板或构件块，其长度参数化，用于构建各种集成电路装置和模块化结构，包括但不限于功率放大器，n阻抗变压器和功率组合器 。