Abstract:
PROBLEM TO BE SOLVED: To provide a method for calculating intermediate-range and long-range image contributions from mask polygons. SOLUTION: An algorithm is introduced having application to optical proximity correction in optical lithography. A finite integral for each sector of a polygon replaces an infinite integral. A finite integral is achieved by integrating over two triangles instead of integrating on full sectors. An analytical approach is presented for a power law kernel to reduce the numerical integration of a sector to an analytical expression evaluation. The mask polygon is divided into a plurality of regions to calculate effects of interaction such as intermediate-range and long-range effects, by truncating the mask instead of truncating the kernel function. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a method and a program storage device in which model base optical proximity collection is performed, by providing a region of interest (ROI) having interaction distance and tracing at least one polygon in the ROI. SOLUTION: A cut line or a plurality of cut lines of sample points showing a set of apexes are formed within the ROI so as to be traversed at least one side edge of polygon. By determining an angular position, and a first part and a second part of the cut line in opposing side surfaces which intersect between the cut line and the side edge of the polygon, and then, based on the angular position and the first part and the second part of the cut line extending the original ROI over the interaction distance, new ROI is formed. By this form, various new ROI is formed in various different directions. Finally, optical proximity can be corrected. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a method for performing model-based photolithography correction by partitioning a cell array layout having a plurality of polygons into a plurality of cells covering the layout, and to provide a program storage device. SOLUTION: The layout is representative of a desired design data hierarchy. A density map is generated corresponding to interactions between the polygons and the plurality of cells, and then the densities within each cell are convolved. An interaction map is formed by using the convolved densities, followed by truncating the interaction map to form a map of truncated cells. Substantially identical groupings of the truncated cells are segregated respectively into differing ones of a plurality of buckets. Each bucket contains a single set of identical groupings of truncated cells. A hierarchal arrangement is generated using the buckets, and the desired design data hierarchy is performed by using the hierarchal arrangement to ultimately correct for photolithography. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
Methods are provided for building integrated circuit transformer devices having compact universal and scalable architectures for millimeter wave applications. For example, an integrated circuit transformer (22) is formed on a semiconductor substrate (21) and includes a ground shield (23) formed on the substrate (21), a primary conductor (24) comprising an elongated conductive strip and a secondary conductor (25) comprising an elongated conductive strip. The primary conductor (24) and the secondary conductor (25) are aligned to form a coupled-wire structure that is disposed adjacent to the ground shield (23). The ground shield (23) comprises a pattern of close-ended parallel elongated slots (23a) and parallel conductive strips (23b) that are commonly connected at end portions thereof along edge regions (23c) of the ground shield (23). The slots (23a) and strips (23b) are disposed orthogonal to the primary (24) and secondary (25) conductors. The edge regions (23c) provide current return paths that are collinear to the primary (24) and secondary (25) conductors. The integrated circuit transformer (22) can be used as template or building block, which is parameterized by length, for constructing various integrated circuit devices and modular structures including, but not limited to, power amplifiers, n:l impendence transformers, and power combiners.
Abstract:
PROBLEM TO BE SOLVED: To provide a method for carrying out model-based optical proximity correction by disposing a mask matrix having a region of interest (ROI) and locating a plurality of points of interest within the mask matrix, and to provide a program storage device for executing the above method. SOLUTION: A first polygon 200 having a plurality of vertices representative of the located points of interest is computed, followed by determining a spatial relationship between the vertices and the ROI 100. The vertices of the first polygon are pinned to boundaries of and within the ROI to form a second polygon 300 on the ROI. This processing is repeated for all vertices of the first polygon to collapse the second polygon on the ROI. The collapsed second polygon is used to correct for optical proximity. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a method for computing a phase map within an optical proximity correction simulation kernel. SOLUTION: A first method utilizes simulated wavefront information from randomly generated data. A second method uses measured data from optical tools. A phase map is created by analytically embedding a randomly generated two-dimensional array comprising complex numbers of wavefront information, and performing an inverse Fourier transform on the resultant array. A filtering function requires the amplitude of each element of the array to be multiplied by a Gaussian function. A power law is then applied to the array. The elements of the array are shuffled, and converted from a phasor form to a real/imaginary form. A two-dimensional fast Fourier transform is applied. The array is then unshuffled and converted back to the phasor form. COPYRIGHT: (C)2005,JPO&NCIPI