公开(公告)号：JP2002026148A

公开(公告)日：2002-01-25

申请号：JP2001189096

申请日：2001-06-22

Applicant: IBM

Inventor： MANDELMAN JACK A ,  DIVAKARUNI RAMACHANDRA ,  RADENS CARL J ,  GRUENING ULRIKE ,  SUDO AKIRA

IPC: H01L27/108 ,  H01L21/8242

Abstract: PROBLEM TO BE SOLVED: To provide a new deep trench(DT) collar process which reduces disturbance of strap diffusion to an array metal oxide semiconductor field effect transistor(MOSFET) of a semiconductor device. SOLUTION: By this method, an oxidation barrier layer is formed on a sidewall of the DT provided in the semiconductor substrate, a photoresist layer of specific depth is provided in the trench to remove the oxidation barrier layer to specific depth and expose the trench sidewall, and the remaining photoresist is removed. A layer of a silicon material is stuck on the exposed trench sidewall, and a dielectric layer is formed on the silicon material layer to form a collar. The remaining oxidation barrier layer is removed from the trench and polysilicon which forms a storage node is charged. Consequently, the distance between a MOSFET gate and a DT storage capacitor is maximized, and the effective edge bias of the DT at its peak is reducible without spoiling the storage capacity.

公开(公告)号：JP2002026146A

公开(公告)日：2002-01-25

申请号：JP2001180648

申请日：2001-06-14

Applicant: IBM

Inventor： DIVAKARUNI RAMA ,  JAMMY RAJARAO ,  BYOON WAI KIMU ,  MANDELMAN JACK A ,  SUDO AKIRA ,  TOBBEN DIRK

IPC: H01L21/8242 ,  H01L27/108 ,  H01L29/94

Abstract: PROBLEM TO BE SOLVED: To provide a structure and a method for a trench-type capacitor improved in its charge holding capability. SOLUTION: The memory device includes a trench 23 which is formed on a substrate and has an upper part. A collar oxide film 21 is arranged at the upper part of the trench. A collar oxide film includes a pedestal 25. A conductor is charged in the trench. The pedestal reduces a leak of charges in the conductor. The method for forming the memory device, having the collar oxide film having the pedestal collar, is also disclosed.