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    Rhodium and ruthenium compositions
    1.
    发明授权
    Rhodium and ruthenium compositions 失效
    铑和钌组合物

    公开(公告)号：US3904404A

    公开(公告)日：1975-09-09

    申请号：US53965775

    申请日：1975-01-09

    Applicant: IBM

    Inventor： SUITS JAMES CARR

    IPC: C22C5/04 ,  H01F1/04 ,  H01F1/047

    CPC classification number: H01F1/04 ,  C22C5/04

    Abstract: Compositions having the general formula R2TX are disclosed where R is taken from the group consisting of Rh and Ru; where T is taken from the group consisting of Fe, Co, Ni, V, Cr and Cu; and where X is taken from the group consisting of Al, Ga, In, Tl, Ge, Sn and Sb. Compositions wherein T is taken from the group consisting of Fe, Ni and Co and where X is taken from the group consisting of Ge and Sn are particularly useful as ferromagnetic materials. Examples of such compositions are Rh2FeGe and Ru2FeSn.

    Abstract translation: 公开了具有通式R2TX的组合物，其中R取自Rh和Ru组成的组; 其中T取自Fe，Co，Ni，V，Cr和Cu组成的组; 并且其中X是从由Al，Ga，In，Tl，Ge，Sn和Sb组成的组中取出的。 其中T取自Fe，Ni和Co组成的组分，其中X取自Ge和Sn组成的组特别适用于铁磁材料。 这些组合物的实例是Rh 2 FeGe和Ru 2 FeSn。

    4.
    发明专利
    未知

    公开(公告)号：DE2551098A1

    公开(公告)日：1976-07-15

    申请号：DE2551098

    申请日：1975-11-14

    Applicant: IBM

    Inventor： SUITS JAMES CARR

    IPC: C22C5/04 ,  H01F1/04 ,  H01F1/047 ,  C22C1/00 ,  B22F3/00

    Abstract: Compositions having the general formula R2TX are disclosed where R is taken from the group consisting of Rh and Ru; where T is taken from the group consisting of Fe, Co, Ni, V, Cr and Cu; and where X is taken from the group consisting of Al, Ga, In, Tl, Ge, Sn and Sb. Compositions wherein T is taken from the group consisting of Fe, Ni and Co and where X is taken from the group consisting of Ge and Sn are particularly useful as ferromagnetic materials. Examples of such compositions are Rh2FeGe and Ru2FeSn.

    FERROMAGNETIC COMPOSITION
    5.
    发明专利
    FERROMAGNETIC COMPOSITION 未知

    公开(公告)号：AU2538277A

    公开(公告)日：1978-11-30

    申请号：AU2538277

    申请日：1977-05-23

    Applicant: IBM

    Inventor： SUITS JAMES CARR

    IPC: C22C19/03 ,  H01F1/147 ,  H01F10/14 ,  H01F1/04 ,  H01F10/02

    Abstract: Permalloy type alloys containing rhodium suitable for use in magnetic devices and having improved resistance to corrosion contain from about 65 to 90 atomic percent nickel, 10 to 35 atomic percent iron and 1 to 25 atomic percent rhodium. Magnetic films made of these alloys which contain 1 to 10 atomic percent rhodium exhibit magnetic properties similar to Permalloy while having increased resistance to corrosion.

    6.
    发明专利
    未知

    公开(公告)号：DE2724433A1

    公开(公告)日：1977-12-08

    申请号：DE2724433

    申请日：1977-05-31

    Applicant: IBM

    Inventor： SUITS JAMES CARR

    IPC: C22C19/03 ,  H01F1/147 ,  H01F10/14

    Abstract: Permalloy type alloys containing rhodium suitable for use in magnetic devices and having improved resistance to corrosion contain from about 65 to 90 atomic percent nickel, 10 to 35 atomic percent iron and 1 to 25 atomic percent rhodium. Magnetic films made of these alloys which contain 1 to 10 atomic percent rhodium exhibit magnetic properties similar to Permalloy while having increased resistance to corrosion.

    8.
    发明专利
    未知

    公开(公告)号：DE2407501A1

    公开(公告)日：1974-08-29

    申请号：DE2407501

    申请日：1974-02-16

    Applicant: IBM

    Inventor： LEE KENNETH ,  SUITS JAMES CARR

    IPC: C23C26/00 ,  H01F10/12 ,  H01F41/14 ,  C23C13/04 ,  G11B5/84

    Abstract: A method of making ferromagnetic films of MnGaGe upon a substrate, the films crystallizing in the tetragonal structure and having a grain size of less than one-half micron, made by the method of depositing a first layer of either manganese, or gallium and germanium upon a heated substrate, followed by the deposition of the remaining material upon the first layer, and annealing the deposited layers at a desired temperature until a homogeneous composition is achieved, and then cooling of the film-substrate combination. In this manner, with appropriately chosen temperatures, films having a grain size of less than one-half micron and being particularly usable for storage applications may be fabricated.

    9.
    发明专利
    未知

    公开(公告)号：DE2248839A1

    公开(公告)日：1973-05-30

    申请号：DE2248839

    申请日：1972-10-05

    Applicant: IBM

    Inventor： SUITS JAMES CARR ,  LEE KENNETH ,  SAWATZKY ERICH

    IPC: C22C22/00 ,  C22C28/00 ,  C22C30/00 ,  G03G5/16 ,  H01F1/04 ,  H01F1/047 ,  H01F10/10 ,  H01F10/18 ,  C22C31/02

    Abstract: 1396136 Ferromagnetic material; Vapour depositing or sputtering magnetic films INTERNATIONAL BUSINESS MACHINES CORP 2 Nov 1972 [26 Nov 1971] 50453/72 Headings C7A and C7F A ferromagnetic material consists of a mutual solid solution with atomic proportions indicated by the Formula:- or by the Formula:- The material is useful in data storage media as a thin film (e.g. on a non-magnetic substrate) which may be prepared by RF or D.C. sputtering or by vacuum deposition. The substrate, which may be of Al, glass or ceramic, in the form of a disc, strip or drum, may be kept at 25-420‹C during deposition, and the preferred deposition rate is 2-10Š per second.

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