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公开(公告)号:US3681245A
公开(公告)日:1972-08-01
申请号:US3681245D
申请日:1970-12-10
Applicant: IBM
Inventor: LEE KENNETH
IPC: H01F1/03 , H01F10/187 , C04B35/50
CPC classification number: H01F10/187 , H01F1/0313
Abstract: A FERROMAGNETIC COMPOSITION CONSISTING ESSENTIALLY OF EUO DOPED WITH EXCESS EU AND A MONOVALENT METAL CHOSEN FROM THE GROUP CONSISTING OF AG, CU, AU, NA, K, IN. BY SUCH DROPING, THE CURIE POINT OF EUO IS RAISED FROM 77*K. TO 150*K., WITH AN INCRESE IN THE ELECTRICAL RESISTIVITY AS WELL
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公开(公告)号:US3930241A
公开(公告)日:1975-12-30
申请号:US51832974
申请日:1974-10-29
Applicant: IBM
Inventor: GUARNIERI C RICHARD , LEE KENNETH , ONTON AARE
Abstract: A film of magnetic amorphous material capable of supporting bubble domains containing a region therein having a canted direction of magnetic uniaxial anisotropy is described. An example is a magnetic amorphous film having bubble domains therein in which the magnetic uniaxial anisotropy is canted at an angle of 5* from a line perpendicular to the plane of the film. Another example is a film of magnetic amorphous material containing one layer having the magnetic uniaxial anisotropy canted in one direction and a second layer having the magnetic uniaxial anisotropy canted in another direction.
Abstract translation: 描述能够支撑含有其中具有磁性单轴各向异性倾斜方向的区域的气泡域的磁性无定形材料的膜。 一个例子是具有气泡区域的磁性非晶膜,其中磁性单轴各向异性以垂直于膜平面的线倾斜5度。 另一个例子是含有一个方向的磁性单轴各向异性的一层的磁性无定形材料的膜,另一方向具有磁性单轴各向异性的第二层。
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公开(公告)号:US3915698A
公开(公告)日:1975-10-28
申请号:US49744274
申请日:1974-08-14
Applicant: IBM
Inventor: LEE KENNETH , STREET GEORGE BRYAN , SUITS JAMES CARR
Abstract: Manganese bismuth is stabilized in the high temperature (Beta) phase by the addition of small amounts of either rhodium or ruthenium.
Abstract translation: 锰铋通过添加少量的铑或钌在高温(β)相中稳定。
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公开(公告)号:DE2407501A1
公开(公告)日:1974-08-29
申请号:DE2407501
申请日:1974-02-16
Applicant: IBM
Inventor: LEE KENNETH , SUITS JAMES CARR
Abstract: A method of making ferromagnetic films of MnGaGe upon a substrate, the films crystallizing in the tetragonal structure and having a grain size of less than one-half micron, made by the method of depositing a first layer of either manganese, or gallium and germanium upon a heated substrate, followed by the deposition of the remaining material upon the first layer, and annealing the deposited layers at a desired temperature until a homogeneous composition is achieved, and then cooling of the film-substrate combination. In this manner, with appropriately chosen temperatures, films having a grain size of less than one-half micron and being particularly usable for storage applications may be fabricated.
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公开(公告)号:DE2248839A1
公开(公告)日:1973-05-30
申请号:DE2248839
申请日:1972-10-05
Applicant: IBM
Inventor: SUITS JAMES CARR , LEE KENNETH , SAWATZKY ERICH
IPC: C22C22/00 , C22C28/00 , C22C30/00 , G03G5/16 , H01F1/04 , H01F1/047 , H01F10/10 , H01F10/18 , C22C31/02
Abstract: 1396136 Ferromagnetic material; Vapour depositing or sputtering magnetic films INTERNATIONAL BUSINESS MACHINES CORP 2 Nov 1972 [26 Nov 1971] 50453/72 Headings C7A and C7F A ferromagnetic material consists of a mutual solid solution with atomic proportions indicated by the Formula:- or by the Formula:- The material is useful in data storage media as a thin film (e.g. on a non-magnetic substrate) which may be prepared by RF or D.C. sputtering or by vacuum deposition. The substrate, which may be of Al, glass or ceramic, in the form of a disc, strip or drum, may be kept at 25-420C during deposition, and the preferred deposition rate is 2-10 per second.
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公开(公告)号:DE2543238A1
公开(公告)日:1976-05-06
申请号:DE2543238
申请日:1975-09-27
Applicant: IBM
Inventor: GUARNIERI C RICHARD , LEE KENNETH , ONTON AARE
Abstract: A film of magnetic amorphous material capable of supporting bubble domains containing a region therein having a canted direction of magnetic uniaxial anisotropy is described. An example is a magnetic amorphous film having bubble domains therein in which the magnetic uniaxial anisotropy is canted at an angle of 5 DEG from a line perpendicular to the plane of the film. Another example is a film of magnetic amorphous material containing one layer having the magnetic uniaxial anisotropy canted in one direction and a second layer having the magnetic uniaxial anisotropy canted in another direction.
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公开(公告)号:FR2289998A1
公开(公告)日:1976-05-28
申请号:FR7525829
申请日:1975-08-11
Applicant: IBM
Inventor: GUARNIERI C R , LEE KENNETH , ONTON AAEZ
Abstract: A film of magnetic amorphous material capable of supporting bubble domains containing a region therein having a canted direction of magnetic uniaxial anisotropy is described. An example is a magnetic amorphous film having bubble domains therein in which the magnetic uniaxial anisotropy is canted at an angle of 5 DEG from a line perpendicular to the plane of the film. Another example is a film of magnetic amorphous material containing one layer having the magnetic uniaxial anisotropy canted in one direction and a second layer having the magnetic uniaxial anisotropy canted in another direction.
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公开(公告)号:DE3380328D1
公开(公告)日:1989-09-07
申请号:DE3380328
申请日:1983-11-15
Applicant: IBM
Inventor: BEST JOHN STEWART , LEE KENNETH , TSANG CHING HWA
Abstract: A dual element magnetic transducer in which the thin film M/R read element is transversely biased by flux in the air gap of the inductive write core generated by a bias current supplied to the write winding. Flux in the air gap biases the M/R element because different integral portions of the M/R element have a different spatial relationship to parallel opposing portions of the inductive core. The flux which would normally pass through the gap substantially normal to the sides of the core defining the gap now tends to follow the M/R element along a direction normal or transverse to the media to a point where the distance between the M/R element and the core is smaller than where it entered. By appropriate control of the bias current and the spatial relationships, a relatively efficient, simple to manufacture dual element magnetic transducer is provided.
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公开(公告)号:FR2288708A1
公开(公告)日:1976-05-21
申请号:FR7521465
申请日:1975-07-01
Applicant: IBM
Inventor: LEE KENNETH , STREET GEORGE B , SUITS JAMES C
IPC: G11B5/62 , C22C12/00 , C22C22/00 , C22C28/00 , G03G5/16 , H01F1/00 , H01F10/18 , H01L37/04 , C01G45/00 , C01G29/00
Abstract: Manganese bismuth is stabilized in the high temperature (Beta) phase by the addition of small amounts of either rhodium or ruthenium.
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公开(公告)号:DE2532655A1
公开(公告)日:1976-03-04
申请号:DE2532655
申请日:1975-07-22
Applicant: IBM
Inventor: LEE KENNETH , STREET GEORGE BRYAN , SUITS JAMES CARR
Abstract: Manganese bismuth is stabilized in the high temperature (Beta) phase by the addition of small amounts of either rhodium or ruthenium.
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