公开(公告)号：US3922708A

公开(公告)日：1975-11-25

申请号：US44810074

申请日：1974-03-04

Applicant: IBM

Inventor： CROWDER BILLY L ,  TAN SWIE-IN

IPC: H01L21/3205 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3115 ,  H01L21/768 ,  H01L23/522 ,  H01L27/02

CPC classification number: H01L28/20 ,  H01L21/31155 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: High value resistors, of the order of 109 ohms/square and higher, are fabricated by implanting zinc or lead ions into a silicon dioxide layer over a silicon chip containing electrical components and/or circuits.

Abstract translation: 通过在包含电气元件和/或电路的硅芯片上注入锌或铅离子到二氧化硅层来制造大约为109欧姆/平方或更高的高值电阻器。

公开(公告)号：DE2707692A1

公开(公告)日：1977-09-01

申请号：DE2707692

申请日：1977-02-23

Applicant: IBM

Inventor： AINSLIE NORMAN GEORGE ,  HEMPSTEAD ROBERT DOUGLAS ,  TAN SWIE-IN ,  VALSTYN ERICH PHILIPP

IPC: C22C38/00 ,  C23C14/40 ,  G11B5/147 ,  G11B5/31 ,  H01F10/14 ,  H01F41/14 ,  H01F41/18 ,  C23C15/00

Abstract: Iron-silicon is sputtered onto a substrate to be used for a magnetic recording head from a target containing 4% to 7% of silicon with a substrate bias between -2.5 and -60 volts, anode-cathode spacing of about 1/2 to about 2 inches, a deposition rate of greater than 150A/min, a substrate temperature above 250 DEG C, an argon pressure above 10 microns, and a single film thickness greater than 0.4 micron, a laminated film thickness greater than 0.05 micron, and R.F. input power above 8 watts/in2.

公开(公告)号：CA1023875A

公开(公告)日：1978-01-03

申请号：CA218279

申请日：1975-01-17

Applicant: IBM

Inventor： CROWDER BILLY L ,  TAN SWIE-IN

IPC: H01L21/3205 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3115 ,  H01L21/768 ,  H01L23/522 ,  H01L

Abstract: High value resistors, of the order of 109 ohms/square and higher, are fabricated by implanting zinc or lead ions into a silicon dioxide layer over a silicon chip containing electrical components and/or circuits.

公开(公告)号：DE2458734A1

公开(公告)日：1975-09-11

申请号：DE2458734

申请日：1974-12-12

Applicant: IBM

Inventor： CROWDER BILLY L ,  TAN SWIE-IN

IPC: H01L21/3205 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3115 ,  H01L21/768 ,  H01L23/522 ,  H01L49/02 ,  H01L27/04

Abstract: High value resistors, of the order of 109 ohms/square and higher, are fabricated by implanting zinc or lead ions into a silicon dioxide layer over a silicon chip containing electrical components and/or circuits.

公开(公告)号：DE3463627D1

公开(公告)日：1987-06-19

申请号：DE3463627

申请日：1984-11-23

Applicant: IBM

Inventor： AINSLIE NORMAN GEORGE ,  TAN SWIE-IN

IPC: H01L21/60 ,  B23K20/02 ,  B23K20/10 ,  B23K26/06 ,  B29C65/00 ,  B29C65/02 ,  B29C65/08 ,  B29C65/14 ,  B29C65/16 ,  B29C65/18 ,  B29C65/24 ,  B29C65/68 ,  B23K20/00 ,  B23K3/04

Abstract: Apparatus and method for heat bonding surfaces together. A laser beam (21) is applied to the opening (18) in a bonding tip (15). The bonding tip (15) includes a conically tapered central passage (17), forming a black body cavity, extending from the opening (18) to an exit bore (16). The heated tip end around the bore (16) is applied to the fuse- able surfaces in either a thermo-compression or thermosonic bonding operation. For the latter operation an ultrasonic generator (20) is coupled to the bonding tip (15). The bonding tip (15) is heated by absorbing energy from the laser beam.

公开(公告)号：DE2963695D1

公开(公告)日：1982-11-04

申请号：DE2963695

申请日：1979-12-04

Applicant: IBM

Inventor： TAN SWIE-IN

IPC: H05K3/34 ,  B23K1/005 ,  B23K26/08 ,  B23K26/12 ,  B23K26/20 ,  B29C65/00 ,  B29C65/16 ,  H01L21/60 ,  H01L23/32 ,  B23K26/00

Abstract: Defective chips are removed from a substrate package. The package is cleaned. Replacement chips with solder bearing elements are replaced in the position(s) of the defective chip(s). Silicon chips are less damaged by heating with light wavelengths substantially shorter than infrared radiation, when the radiation is directed upon the upper chip surface and the lower chip surface carries circuitry and solder balls. Radiation is absorbed by the upper chip surface and converted there directly to heat, protecting the circuitry below. An argon-ion laser beam confined to a given chip is directed upon the upper surface of the chip to be soldered in place. A thin laser beam can be scanned under computer control across a chip to heat the areas of a chip above solder balls. Automatic temperature control of the chip can be provided by a heat detector or chip condition detector and a program controller in a feedback loop controlling laser power.

公开(公告)号：FR2342547A1

公开(公告)日：1977-09-23

申请号：FR7700649

申请日：1977-01-05

Applicant: IBM

Inventor： AINSLIE NORMAN G ,  HEMPSTEAD ROBERT D ,  TAN SWIE-IN ,  VALSTYN ERICH P

IPC: C22C38/00 ,  C23C14/40 ,  G11B5/147 ,  G11B5/31 ,  H01F10/14 ,  H01F41/14 ,  H01F41/18 ,  H01F10/02 ,  G11B5/62

Abstract: Iron-silicon is sputtered onto a substrate to be used for a magnetic recording head from a target containing 4% to 7% of silicon with a substrate bias between -2.5 and -60 volts, anode-cathode spacing of about 1/2 to about 2 inches, a deposition rate of greater than 150A/min, a substrate temperature above 250 DEG C, an argon pressure above 10 microns, and a single film thickness greater than 0.4 micron, a laminated film thickness greater than 0.05 micron, and R.F. input power above 8 watts/in2.