2.
    发明专利
    未知

    公开(公告)号:FR2342547A1

    公开(公告)日:1977-09-23

    申请号:FR7700649

    申请日:1977-01-05

    Applicant: IBM

    Abstract: Iron-silicon is sputtered onto a substrate to be used for a magnetic recording head from a target containing 4% to 7% of silicon with a substrate bias between -2.5 and -60 volts, anode-cathode spacing of about 1/2 to about 2 inches, a deposition rate of greater than 150A/min, a substrate temperature above 250 DEG C, an argon pressure above 10 microns, and a single film thickness greater than 0.4 micron, a laminated film thickness greater than 0.05 micron, and R.F. input power above 8 watts/in2.

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