NOISE SEPARATION BURIED RESISTOR
    1.
    发明专利

    公开(公告)号:JPH10242389A

    公开(公告)日:1998-09-11

    申请号:JP2700998

    申请日:1998-02-09

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a noise separation burial resistor that satisfies the requirements of a low-noise analog design requiring a properly controlled ohm resistor. SOLUTION: An electric field shielding is provided between a buried resistor and a substrate to separate the buried resistor from the noise of a substrate by a standard buried resistor layout and a mask sequence with two exceptions. First, the buried resistor is not simply arranged at the region of a P well 13 but arranged at the region of an N well 4. Second, to electrically separate the buried resistor from the N well 14, a boron impregnant is added via the buried resistor mask and the P well 13 is formed inside the N well 14, thus electrically connecting the N well 14 to the noiseless ground. The P well 13 inside the N well 14 is left in floating state.

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