公开(公告)号：DE3689341D1

公开(公告)日：1994-01-13

申请号：DE3689341

申请日：1986-03-11

Applicant: IBM

Inventor： PSARAS PETER ANGELO ,  TU KING-NING ,  THOMPSON RICHARD DEAN

IPC: H01L29/78 ,  B01J37/10 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872 ,  H01L29/40

Abstract: A metal silicide-silicon structure (FIG. 2) is produced by depositing the same metal (M) on first (12) and second (13) silicon regions and forming, in a single thermal conversion step, different metal silicide phases (MS1, MS2) on the first and second silicon regions owing to a difference in the dopant and/or dopant level between the first and second silicon regions. The different metal silicide phases can be tailored for different applications, including ohmic contacts, diode barrier contacts, interconnection lines, gate contacts, and diffusion barriers.

公开(公告)号：DE3167721D1

公开(公告)日：1985-01-24

申请号：DE3167721

申请日：1981-09-09

Applicant: IBM

Inventor： THOMPSON RICHARD DEAN ,  TSAUR BORYEU ,  TU KING-NING

IPC: H01L29/80 ,  H01L21/28 ,  H01L21/285 ,  H01L21/329 ,  H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872 ,  H01L29/40