公开(公告)号：JPS62126627A

公开(公告)日：1987-06-08

申请号：JP24332986

申请日：1986-10-15

Applicant: IBM

Inventor： TU KING-NING

IPC: H01L21/20 ,  H01L21/74 ,  H01L27/00 ,  H01L29/41

公开(公告)号：DE3689341D1

公开(公告)日：1994-01-13

申请号：DE3689341

申请日：1986-03-11

Applicant: IBM

Inventor： PSARAS PETER ANGELO ,  TU KING-NING ,  THOMPSON RICHARD DEAN

IPC: H01L29/78 ,  B01J37/10 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872 ,  H01L29/40

Abstract: A metal silicide-silicon structure (FIG. 2) is produced by depositing the same metal (M) on first (12) and second (13) silicon regions and forming, in a single thermal conversion step, different metal silicide phases (MS1, MS2) on the first and second silicon regions owing to a difference in the dopant and/or dopant level between the first and second silicon regions. The different metal silicide phases can be tailored for different applications, including ohmic contacts, diode barrier contacts, interconnection lines, gate contacts, and diffusion barriers.

公开(公告)号：CA1189982A

公开(公告)日：1985-07-02

申请号：CA407332

申请日：1982-07-15

Applicant: IBM

Inventor： EIZENBERG MOSHE ,  TU KING-NING

IPC: H01L21/3205 ,  H01L21/02 ,  H01L21/28 ,  H01L23/52 ,  H01L29/06

Abstract: ELECTRICAL MULTILAYER CONTACT FOR MICROELECTRONIC STRUCTURE A guided interracial reaction is utilized which is to finish soon and to result in the formation of an equilibrium (or near equilibrium in actual practice) diffusion barrier. Illustratively, for a diffusion barrier between A (e.g., Al) and B (e.g., Si) the exemplary barrier layer in accordance with the principles of this invention is an alloy of MxNy (e.g., Pd20W80) satisfying the following criteria: (1) M is an element which reacts with both A and B to form compounds; and (2) N does not react with either A or B in compound formation in the presence of M. A low mutual solid solubility of M and N is desirable. Thus, N-A, and N-B eutectic systems are suitable for N and M. The composition of the alloy is preferably rich in N. The alloy can be made by codeposition or sputtering with the sandwich structure of A/MxNy/B being made in one pump-down without breaking vacuum. A thermal annealing is introduced to engage reactions between A and MxNy and between MXNy and B, thereby forming compounds AMi and BMj, respectively. Thermal annealing is introduced after all three layers are deposited to obtain a multilayer structure: =A1/AMi=A13Pd/N(M)=W(Pd)/BMj= Pd2 Si/B=Si. The extent of these reactions can be controlled by tailoring the concentration of M in the alloy. All M cannot be depleted from N(M) because of entropy of mixing and equilibrium will be reached when the compound formation energy equals the partial molar free energy of M in N.

公开(公告)号：DE69637333D1

公开(公告)日：2008-01-10

申请号：DE69637333

申请日：1996-06-12

Applicant: IBM

Inventor： ANDRICACOS PANAYOTIS C ,  DELIGIANNI HARIKLIA ,  HARPER JAMES MCKELL EDWIN ,  HU CHAO-KUN ,  PEARSON DALE JONATHAN ,  REYNOLDS SCOTT KEVIN ,  TU KING-NING ,  UZOH CYPRIAN EMEKA

IPC: C22C9/00 ,  H01L23/532 ,  C22C9/02 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498

Abstract: Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and a method of making such interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.

公开(公告)号：CA1199404A

公开(公告)日：1986-01-14

申请号：CA403576

申请日：1982-05-21

Applicant: IBM

Inventor： TU KING-NING ,  AHN KIE Y ,  HERD SIGRID R

IPC: G11C17/00 ,  B41M5/26 ,  G11B7/243 ,  G11C13/04 ,  G11B7/24

Abstract: SILICON LAMINATED MEDIA FOR ARCHIVAL OPTICAL STORAGE Laminated media for optical storage of data in binary form include bi-layer and multi-layer structures of silicon and another element preferably a transition metal. Metals more useful are included in Groups VB, VIB, VIIB, and VIII on the periodic chart plus Mg and Au. More advantageous elements within the above group include V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Rh, Ni, Pd, Pt, and Au. The most effective elements are Pd, Pt, Cr, Ta, Rh, V, and Co. The metal can be deposited upon a silicon layer or vice versa. The latter is preferred where a recording laser beam hits the silicon layer first because the amount of energy reflected is reduced and the silicon layer on top passivates the metal layer. The materials are nontoxic. Bi-layers of rhodium and silicon have extremely long lifetimes, Pt and Si are long, Pd and Si are less long and Te alone has an extremely short lifetime comparatively.

公开(公告)号：DE3167721D1

公开(公告)日：1985-01-24

申请号：DE3167721

申请日：1981-09-09

Applicant: IBM

Inventor： THOMPSON RICHARD DEAN ,  TSAUR BORYEU ,  TU KING-NING

IPC: H01L29/80 ,  H01L21/28 ,  H01L21/285 ,  H01L21/329 ,  H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872 ,  H01L29/40

公开(公告)号：CA1038504A

公开(公告)日：1978-09-12

申请号：CA247395

申请日：1976-03-05

Applicant: IBM

Inventor： BAGLIN JOHN E ,  DISTEFANO THOMAS H ,  TU KING-NING

IPC: H01L21/265 ,  C03C23/00 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/316 ,  H01L29/51 ,  H01L21/72

Abstract: METHOD FOR IMPROVING DIELECTRIC BREAKDOWN STRENGTH OF INSULATING-GLASSY-MATERIAL LAYER OF A DEVICE INCLUDING ION IMPLATATION THEREIN It has been discovered for the practice of this disclosure that a particular ion radiation treatment of amorphous SiO2 thin film, with a subsequent annealing procedure, improves the dielectric breakdown property of the film. The treated SiO2 film is found to be substantially more dense than a comparable untreated SiO2 film. It is theorized for the practice of this disclosure that the physical mechanism which produces the densification of the SiO2 film may be responsible for the enhanced dielectric properties of the film. Such an improved film is especially useful as the gate insulator layer in an insulated-gate electrode field-effect transistor device, and as an insulating layer for electrically separating two metallic films in a thin film integrated circuit. Such SiO2 thin films are useful in integrated circuit technology because the electrical insulation property thereof is considerably improved, e.g., in metal-oxide-semiconductor field effect devices in which the gate insulation is relatively thin, e.g. less than 500.ANG., and in metallic magnetic-bubble devices in which a thin SiO2 layer is used to separate the sense element from the conductive magnetic film.

公开(公告)号：DE69637333T2

公开(公告)日：2008-10-02

申请号：DE69637333

申请日：1996-06-12

Applicant: IBM

Inventor： ANDRICACOS PANAYOTIS C ,  DELIGIANNI HARIKLIA ,  HARPER JAMES MCKELL EDWIN ,  HU CHAO-KUN ,  PEARSON DALE JONATHAN ,  REYNOLDS SCOTT KEVIN ,  TU KING-NING ,  UZOH CYPRIAN EMEKA

IPC: C22C9/00 ,  H01L23/532 ,  C22C9/02 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498

Abstract: Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and a method of making such interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.

公开(公告)号：DE3683986D1

公开(公告)日：1992-04-02

申请号：DE3683986

申请日：1986-09-19

Applicant: IBM

Inventor： TU KING-NING ,  STOBBS WILLIAM MICHAEL

IPC: H01L21/20 ,  H01L21/74 ,  H01L27/00 ,  H01L29/41 ,  H01L21/82

Abstract: A planar 3D epitaxial structure is described in which metal compounds (12)are formed in a semiconductor layer (10), the metal compounds being epitaxial with the semiconductor layer and having a top surface which is planar with the top surface of the semiconductor layer. Onto this another layer can be epitaxially grown, such as an additional semiconductor layer (18). The technique for forming such a structure utilizes a starting material (22) for metal compound formation which leaves a residue that is preferentially etched in order to preserve the embedded metal compound (12) and to leave a substantially planar surface comprising the metal compound epitaxial regions (12) and the unreacted surface regions of the semiconductor layer (10).

公开(公告)号：CA1238721A

公开(公告)日：1988-06-28

申请号：CA499556

申请日：1986-01-14

Applicant: IBM

Inventor： PSARAS PETER A ,  TU KING-NING ,  THOMPSON RICHARD D

IPC: H01L29/78 ,  B01J37/10 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872 ,  H01L29/06 ,  H01L21/18

Abstract: A structure and method are described for forming different metal silicide phases, using the same metallurgy and the same processing steps. A layer of metal is deposited on a silicon substrate and is heated to thermally convert the metal-silicon combination to a metal silicide. The metal silicide phase which forms is strongly dependent upon the dopant and doping level in the silicon substrate, for various combinations of metal and dopant. Thus, different metal silicides can be formed on different regions of the substrate in accordance with the dopant and doping levels in those different regions, even though the process steps and metallurgy are the same. These different metal silicides can be tailored for different applications, including ohmic contacts, diode barrier contacts, interconnection lines, gate contacts, and diffusion barriers. YO984-029