SEMI-CONDUCTOR DEVICE WITH SCHOTTKY BARRIER SILICIDE CONTACTS AND METHOD THEREFOR

    公开(公告)号:CA1169586A

    公开(公告)日:1984-06-19

    申请号:CA383760

    申请日:1981-08-12

    Applicant: IBM

    Abstract: SEMICONDUCTOR DEVICE WITH SCHOTTKY BARRIER SILICIDE CONTACTS AND METHOD THEREFOR In the practice of this disclosure, rare earth disilicide low Schottky barriers (? 0.4 eV) are used as low resistance contacts to n-Si. Further, high resistance contacts to p-Si (Schottky barrier of ? 0.7 eV) are also available by practice of this disclosure. A method is disclosed for forming contemporaneously high (? 0.8 eV) and low (? 0.4 eV) energy Schottky barriers on an n-doped silicon substrate. Illustratively, the high energy Schottky barrier is formed by reacting platinum or iridium with silicon; the low energy Schottky barrier is formed by reacting a rare earth with silicon to form a disilicide. Illustratively, a double layer of Pt/on W is an effective diffusion barrier on Gd and prevents the Gd from oxidation.

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