公开(公告)号：DE3167721D1

公开(公告)日：1985-01-24

申请号：DE3167721

申请日：1981-09-09

Applicant: IBM

Inventor： THOMPSON RICHARD DEAN ,  TSAUR BORYEU ,  TU KING-NING

IPC: H01L29/80 ,  H01L21/28 ,  H01L21/285 ,  H01L21/329 ,  H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872 ,  H01L29/40

公开(公告)号：CA1169586A

公开(公告)日：1984-06-19

申请号：CA383760

申请日：1981-08-12

Applicant: IBM

Inventor： THOMPSON RICHARD D ,  TSAUR BORYEU ,  TU KING-NING

IPC: H01L29/80 ,  H01L21/28 ,  H01L21/285 ,  H01L21/329 ,  H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872 ,  H01L29/64

Abstract: SEMICONDUCTOR DEVICE WITH SCHOTTKY BARRIER SILICIDE CONTACTS AND METHOD THEREFOR In the practice of this disclosure, rare earth disilicide low Schottky barriers (? 0.4 eV) are used as low resistance contacts to n-Si. Further, high resistance contacts to p-Si (Schottky barrier of ? 0.7 eV) are also available by practice of this disclosure. A method is disclosed for forming contemporaneously high (? 0.8 eV) and low (? 0.4 eV) energy Schottky barriers on an n-doped silicon substrate. Illustratively, the high energy Schottky barrier is formed by reacting platinum or iridium with silicon; the low energy Schottky barrier is formed by reacting a rare earth with silicon to form a disilicide. Illustratively, a double layer of Pt/on W is an effective diffusion barrier on Gd and prevents the Gd from oxidation.