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公开(公告)号:DE3167721D1
公开(公告)日:1985-01-24
申请号:DE3167721
申请日:1981-09-09
Applicant: IBM
Inventor: THOMPSON RICHARD DEAN , TSAUR BORYEU , TU KING-NING
IPC: H01L29/80 , H01L21/28 , H01L21/285 , H01L21/329 , H01L21/338 , H01L29/47 , H01L29/812 , H01L29/872 , H01L29/40
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公开(公告)号:CA1169586A
公开(公告)日:1984-06-19
申请号:CA383760
申请日:1981-08-12
Applicant: IBM
Inventor: THOMPSON RICHARD D , TSAUR BORYEU , TU KING-NING
IPC: H01L29/80 , H01L21/28 , H01L21/285 , H01L21/329 , H01L21/338 , H01L29/47 , H01L29/812 , H01L29/872 , H01L29/64
Abstract: SEMICONDUCTOR DEVICE WITH SCHOTTKY BARRIER SILICIDE CONTACTS AND METHOD THEREFOR In the practice of this disclosure, rare earth disilicide low Schottky barriers (? 0.4 eV) are used as low resistance contacts to n-Si. Further, high resistance contacts to p-Si (Schottky barrier of ? 0.7 eV) are also available by practice of this disclosure. A method is disclosed for forming contemporaneously high (? 0.8 eV) and low (? 0.4 eV) energy Schottky barriers on an n-doped silicon substrate. Illustratively, the high energy Schottky barrier is formed by reacting platinum or iridium with silicon; the low energy Schottky barrier is formed by reacting a rare earth with silicon to form a disilicide. Illustratively, a double layer of Pt/on W is an effective diffusion barrier on Gd and prevents the Gd from oxidation.
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