公开(公告)号：EP1529310A4

公开(公告)日：2009-06-10

申请号：EP02797318

申请日：2002-12-13

Applicant: IBM

Inventor： FORNOF ANN R ,  HEDRICK JEFFREY C ,  LEE KANG-WOOK ,  MALONE KELLY ,  TYBERG CHRISTY S

IPC: H01L23/48 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76832 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides an electrical interconnect structure on a substrate, includes a first porous dielectric layer with surface region from which a porogen has been removed; and an etch stop layer disposed upon the first porous dielectric layer so that the etch stop layer extends to partially fill pores in the surface region of the first porous dielectric layer from which the porogen has been removed, thus improving adhesion during subsequent processing. Another structure comprises a substrate; a plurality of porous dielectric layers disposed on the substrate; an etch stop layer disposed between a first of the dielectric layers and a second of the dielectric layers; and at least one thin, tough, non-porous dielectric layer disposed between at least one of the porous dielectric layers and the etch stop layer. Methods of forming these structures are also provided.

公开(公告)号：JP2008053717A

公开(公告)日：2008-03-06

申请号：JP2007214315

申请日：2007-08-21

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DENNIS M NEWNS ,  LIA KRUSIN-ELBAUM ,  LAM CHUNG H ,  LIU XIAO HU ,  ELMEGREEN BRUCE G ,  DOYLE JAMES P ,  TYBERG CHRISTY S

IPC: H01L21/82

CPC classification number: H01L45/1233 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

Abstract: PROBLEM TO BE SOLVED: To provide a heat-shielded low power PCM-based reprogrammable eFUSE device.
SOLUTION: An electrically re-programmable fuse (eFUSE) device for integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element along a longitudinal axis thereof, leaving both ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with both ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种基于热屏蔽低功率PCM的可重编程eFUSE设备。 解决方案：用于集成电路器件的电可重新编程保险丝（eFUSE）器件包括细长的加热器元件，围绕细长加热器元件的外表面沿其纵向轴线包围的电绝缘衬垫，留下细长的加热器元件的两端 加热元件与第一和第二加热器电极电接触。 相变材料（PCM）围绕电绝缘衬垫的外表面的一部分，热和电绝缘层围绕PCM的外表面，其中第一和第二熔丝电极与PCM的两端电接触。 PCM被封装在电绝缘衬垫，热和电绝缘层以及第一和第二熔丝电极中。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2005175479A

公开(公告)日：2005-06-30

申请号：JP2004353505

申请日：2004-12-07

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CHEN SHYNG-TSONG ,  CHIRAS STEFANIE R ,  COLBURN MATTHEW EARL ,  DALTON TIMOTHY JOSEPH ,  HEDRICK JEFFREY CURTIS ,  HUANG ELBERT EMIN ,  KUMAR KAUSHIK A ,  LANE MICHAEL WAYNE ,  MALONE KELLY ,  NARAYAN CHANDRASEKHAR ,  NITTA SATYANARAYANA V ,  PURUSHOTHAMAN SAMPATH ,  ROSENBERG ROBERT ,  TYBERG CHRISTY S ,  YU ROY RONGQING

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/7682 ,  H01L21/76829 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a structure which reduces the dielectric constant between conductive lines by providing an air dielectric. SOLUTION: In a multilevel microelectronic integrated circuit, air comprises a permanent line level dielectric, and an ultra-low-k material constitutes a via level dielectric. In the IC structure, air is supplied to the line level after removal of a sacrificial material by clean thermal decomposition and auxiliary diffusion of byproducts through porosities. Optionally, air is also included within porosities in the via level dielectric. By incorporating air into the extension produced in the invention, intralevel and interlevel dielectric values are minimized. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供通过提供空气电介质来降低导线之间的介电常数的结构。 解决方案：在多电平微电子集成电路中，空气包括永久线路电平介质，超低k材料构成通孔级电介质。 在IC结构中，通过清洁的热分解和副产物通过孔隙的辅助扩散除去牺牲材料之后，空气被提供给线路层。 任选地，空气也包括在通孔级电介质中的孔隙中。 通过将空气并入本发明中生产的延伸中，使层内和层间介电值最小化。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004228569A

公开(公告)日：2004-08-12

申请号：JP2004003456

申请日：2004-01-08

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： COONEY III EDWARD C ,  ROBERT M JEFFKEN ,  MCGAHAY VINCENT J ,  MOTSIFF WILLIAM T ,  MURRAY MARK P ,  PIPER AMANDA L ,  STAMPER ANTHONY K ,  THOMAS DAVID C ,  TYBERG CHRISTY S ,  WEBSTER ELIZABETH T

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/82 ,  H01L23/52 ,  H01L23/522 ,  H01L23/525 ,  H01L23/532

CPC classification number: H01L21/76808 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76892 ,  H01L23/525 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide re-work processing methods of both the level of a single chip connecting or an interconnecting metal and a multilevel. SOLUTION: The method of re-working a BEOL (a back end of a process line) metallization levels of damascene metallurgy comprises the processes of: forming a plurality of BEOL metallization levels 101, 102 on a substrate 110; forming line and via portions in the BEOL metallization level; exposing the line section and the via section by selectively removing at least one BEOL metallization level; and replacing a removed BEOL metallization level with at least one of new BEOL metallization levels. The BEOL metallization levels 101, 102 comprises a first dielectric layers 120, 130 and second dielectric layers 125, 135, and the first dielectric layer includes a material having a dielectric constant lower than that of the second dielectric layer. COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 要解决的问题：提供单芯片连接或互连金属和多层的水平的再加工处理方法。 解决方案：重新加工大马士革冶金的BEOL（工艺线的后端）金属化水平的方法包括以下过程：在衬底110上形成多个BEOL金属化水平101,102; 在BEOL金属化水平上形成线和通孔部分; 通过选择性地去除至少一个BEOL金属化水平来暴露线段和通路部分; 并用至少一个新的BEOL金属化水平替换去除的BEOL金属化水平。 BEOL金属化层101,102包括第一电介质层120,130和第二电介质层125,135，并且第一电介质层包括介电常数低于第二电介质层的介电常数的材料。 版权所有（C）2004，JPO＆NCIPI

公开(公告)号：AU2002361679A8

公开(公告)日：2003-07-09

申请号：AU2002361679

申请日：2002-12-13

Applicant: IBM

Inventor： MALONE KELLY ,  HEDRICK JEFFREY C ,  LEE KANG-WOOK ,  TYBERG CHRISTY S ,  FORNOF ANN R

IPC: H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L21/4763

公开(公告)号：AU2002361679A1

公开(公告)日：2003-07-09

申请号：AU2002361679

申请日：2002-12-13

Applicant: IBM

Inventor： FORNOF ANN R ,  HEDRICK JEFFREY C ,  LEE KANG-WOOK ,  MALONE KELLY ,  TYBERG CHRISTY S

IPC: H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

公开(公告)号：DE60323152D1

公开(公告)日：2008-10-02

申请号：DE60323152

申请日：2003-11-24

Applicant: DOW GLOBAL TECHNOLOGIES INC ,  IBM

Inventor： HEDRICK JEFFREY C ,  SANKARAPANDIAN MUTHUMANICKAM ,  TYBERG CHRISTY S ,  GODSCHALX JAMES P ,  NIU QING SHAN ,  SILVIS H CRAIG

IPC: C08G61/00 ,  C08G61/10 ,  C08L65/00 ,  C09D165/00 ,  H01L23/532

Abstract: A crosslinked polyarylene material with a reduced coefficient of thermal expansion at high temperatures compared with conventional crosslinked polyarylene materials is provided. In addition, an integrated circuit article containing a crosslinked polyarylene polymer with reduced coefficient of thermal expansion at high temperatures is provided.

公开(公告)号：HK1084405A1

公开(公告)日：2006-07-28

申请号：HK06104079

申请日：2006-04-03

Applicant: DOW GLOBAL TECHNOLOGIES INC ,  IBM

Inventor： HEDRICK JEFFREY C ,  SANKARAPANDIAN MUTHUMANICKAM ,  TYBERG CHRISTY S ,  GODSCHALX JAMES P ,  NIU QING SHAN J ,  SILVIS H CRAIG

IPC: C08G20090101 ,  C08G61/00 ,  C08G61/10 ,  C08L20090101 ,  C08L65/00 ,  C09D165/00 ,  H01L20090101 ,  H01L23/532

Abstract: A crosslinked polyarylene material with a reduced coefficient of thermal expansion at high temperatures compared with conventional crosslinked polyarylene materials is provided. In addition, an integrated circuit article containing a crosslinked polyarylene polymer with reduced coefficient of thermal expansion at high temperatures is provided.