X-RAY MASK SUBSTRATE AND METHOD OF FABRICATION THEREOF

    公开(公告)号:CA1191477A

    公开(公告)日:1985-08-06

    申请号:CA426785

    申请日:1983-04-27

    Applicant: IBM

    Abstract: X-RAY MASK SUBSTRATE AND METHOD OF FABRICATION THEREOF An improved X-ray lithography mask has been fabricated by forming an X ray absorbing lithography pattern on a supporting foil of hydrogenated amorphous carbon. The substrate foil is formed by depositing a carbon film in the presence of hydrogen onto a surface having a temperature below 375.degree.C. The hydrogen concentration is maintained sufficiently high that the resulting film has at least one atom percent of hydrogen. A film having about 20 atom percent of hydrogen is preferred. While impurities are permitted, impurities must be maintained at a level such that the optical bandgap of the resulting film is at least one electron volt. A film with an optical bandgap of about 2 electron volts is preferred.

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