公开(公告)号：DE1200403B

公开(公告)日：1965-09-09

申请号：DEJ0020420

申请日：1961-08-18

Applicant: IBM

Inventor： WEED DONALD STRIPPLE

IPC: C23C14/22 ,  G11C11/44 ,  H01B1/00 ,  H01B3/00 ,  H01B3/02 ,  H01B3/10 ,  H01G2/00 ,  H01G13/00 ,  H01L39/18 ,  H01L39/24

Abstract: A substrate 17 is supported in an evacuated bell-jar 11 above a mask 19 and shutter 25, the shutter being rotatable by a knob 29 to control with the mask 19 the area of the substrate over which electrically conducting and insulating coatings are successively deposited. The conducting material, e.g. lead or tin, is contained in a crucible 31 and the insulating material, e.g. silicon monoxide, in a crucible 35, the crucibles being selectively heated electrically by coils 33, 37 while the substrate is heated electrically at 21. A voltage is applied over lines 45 between successive conductive coatings as the second of each pair of such coatings is deposited.

公开(公告)号：GB982324A

公开(公告)日：1965-02-03

申请号：GB2536061

申请日：1961-07-13

Applicant: IBM

Inventor： BEHRNDT MARIANNE E ,  GIEDD CARY ROBERT ,  WEED DONALD STRIPPLE ,  PERKINS MERLYN HAROLD

IPC: C23C14/54 ,  G11C11/44 ,  H01B1/00 ,  H01L39/24

Abstract: A superconductor is formed by vapour depositing a film 1000-10.000 Angstroms thick of Sn, Pb, Ta or In on a heated substrate such as glass, mica or a plastic. The substrate is heated to 70-150 DEG C. so that the deposit will agglomerate and become discontinuous at the sloping edges of the layer. In a further embodiment a monatomic layer of Ag, Au or Pt is first vapour deposited on the substrate which is then heated prior to the deposition of the superconducting layer. As shown in Fig. 1, an evacuated vessel 2 at a pressure of 5 X 10-7 to 5 X 10-6 mm/s. Hg. contains a heated substrate 17 and a boat 9 containing the source material to be evaporated through mask 12. A shutter 14 prevents the material being deposited on the substrate until the required temperature is reached. The substrate is maintained at the correct temperature by a tungsten filament and a controller.