Abstract:
PROBLEM TO BE SOLVED: To provide a match line circuit and match line method for low electric power retrieval in the contents address assignable memory. SOLUTION: Hit is output (emitted) when match line stands from LOW electric level to higher match electric voltage. The Matching voltage is the continuity threshold voltage of N channel field effect transistor(FET), generally is smaller than half of the source power voltage. The circuit and method to cut-off the penetrating current by each unmatch entry, by control signals which are carefully timed at the end of the short period of matching are disclosed.
Abstract:
Circuits and methods for performing search operations in a content addressable memory (CAM) array are provided. A system for searching a CAM includes a circuit that selectively activates a main-search (130) of a two stage CAM search while a pre-search (100) of the two stage CAM search is still active.
Abstract:
Schaltungen und Verfahren zum Ausführen von Suchoperationen in einem Array aus inhaltsadressierbaren Speichern (CAM) werden bereitgestellt. Ein System zum Durchsuchen eines CAM enthält eine Schaltung, die eine Haupt-Suchaktion (130) einer zweistufigen CAM-Suche selektiv aktiviert, während eine Vorab-Suchaktion (100) der zweistufigen CAM-Suche noch aktiv ist.