公开(公告)号：US6432829B2

公开(公告)日：2002-08-13

申请号：US80147301

申请日：2001-03-08

Applicant: IBM

Inventor： MULLER K PAUL L ,  NOWAK EDWARD J ,  WONG HON-SUM P

IPC: H01L21/336 ,  H01L29/786 ,  H01L21/302

CPC classification number: H01L29/785 ,  H01L29/66795 ,  H01L29/78636 ,  H01L29/78654

Abstract: An improved fin device used as the body of a field effect transistor ("FET") and an improved process of making the fin device. The fin device allows for the fabrication of very small dimensioned metal-oxide semiconductor ("MOS") FETs in the size range of micrometers to nanometers, while avoiding the typical short channel effects often associated with MOSFETs of these dimensions. Accordingly, higher density MOSFETs may be fabricated such that more devices may be placed on a single semiconductor wafer. The process of making the fin device results in an improved fully planarized device.

Abstract translation: 用作场效应晶体管（“FET”）的主体的改进的鳍装置以及制造鳍片装置的改进方法。 翅片器件允许制造尺寸范围为微米至纳米的非常小尺寸的金属氧化物半导体（“MOS”）FET，同时避免通常与这些尺寸的MOSFET相关的典型的短沟道效应。 因此，可以制造更高密度的MOSFET，使得可以在单个半导体晶片上放置更多的器件。 制造翅片装置的过程导致改进的完全平坦化的装置。

公开(公告)号：JPH11317666A

公开(公告)日：1999-11-16

申请号：JP1940999

申请日：1999-01-28

Applicant: IBM

Inventor： SADEEL MANISWAMY GOUDA ,  HYUN YONG SHIN ,  WONG HON-SUM P ,  PETER HONG KISHAO ,  JANGOUK YOUNG

IPC: H04N5/14 ,  H03M1/18 ,  H04N5/243

Abstract: PROBLEM TO BE SOLVED: To provide an automatic gain control circuit in which an automatic gain control function is completely executed in a digital area. SOLUTION: This digital automatic gain control circuit for an image sensor, which has an ADC 104 which converts an analog electric signal from an image sensor into a corresponding digital code is provided with a minimum/maximum detector 106, which decides minimum and maximum electric signal values from the digital code of the ADC 104 for each frame of an image. A filter 108 connected to the detector 106 suppresses the instantaneous change in the minimum and maximum electric signal values by filtering and gives filtered minimum and maximum values. A DAC 110 generates minimum and maximum analog reference voltages, which respectively correspond to the filtered minimum and maximum values and supplies them to the ADC 104 and they control an amplitude that is related to the digital code given from the ADC 104.

公开(公告)号：JPH11251569A

公开(公告)日：1999-09-17

申请号：JP7399

申请日：1999-01-04

Applicant: IBM

Inventor： JOHNSON JEFFREY B ,  WONG HON-SUM P

IPC: H01L27/146

Abstract: PROBLEM TO BE SOLVED: To provide a photodetector having an array of active pixel sensor(APS) elements formed in cells which are separated respectively by Si. SOLUTION: Each cell has an insulation barrier 10 (10C, etc.), around and lies on an insulation layer 12 which lies on a substrate 14. A semiconductor connector 18 for doing the vertical contact of each APS element between a pinned layer 24 and body 20 is formed pref. so as to occupy the region at a part of the insulation barrier adjacent to each cell and may be simple vertical connection 18 for connecting a plurality of APS elements or a long strip for connecting the plurality of APS elements. Moreover the semiconductor connector 18 may extend to reach a lower insulation layer 12 or pierce the insulation layer 12 to reach the substrate 14 to ground and interconnect the body 20 of each APS element and pinning layer 24. There a method of manufacturing photosensitive elements is also included.