公开(公告)号：JPH10125644A

公开(公告)日：1998-05-15

申请号：JP27892397

申请日：1997-10-13

Applicant: IBM

Inventor： MCCULLOUGH KENNETH JOHN ,  PURTELL ROBERT JOSEPH ,  ROTHMAN LAURA BETH ,  WU JIN-JWANG

IPC: H01L21/302 ,  B08B7/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To eliminate etchant residue from a precision surface having residue by eliminating the residue from the surface by exposure to supercritical fluid. SOLUTION: Supercritical fluid is pressurized in advance by a high pressure pump. The supercritical fluid is preliminarily pressurized at about 3000psi before it enters a process chamber 12. The preliminarily pressurized supercritical fluid is sent to the process chamber 12 containing a semiconductor specimen through an inlet line 22. The semiconductor specimen having reactive ion etching(RIE) residue is arranged in a specimen zone 16 of the process chamber 12. The specimen is exposed to the supercritical fluid, under a condition sufficient to eliminate RIE residue from the specimen. The supercritical fluid is maintained to be higher than or equal to the critical temperature and the critical pressure.