公开(公告)号：EP1946361A4

公开(公告)日：2011-03-09

申请号：EP06773615

申请日：2006-06-20

Applicant: IBM

Inventor： WONG KEITH KWONG HON ,  PURTELL ROBERT JOSEPH

IPC: H01L21/4763 ,  C23C14/34 ,  H01L21/285

CPC classification number: H01L21/28518 ,  C23C14/16 ,  C23C14/32 ,  C23C14/345 ,  H01L21/28052 ,  H01L21/2855 ,  H01L29/66507 ,  H01L29/78

公开(公告)号：JPH10125644A

公开(公告)日：1998-05-15

申请号：JP27892397

申请日：1997-10-13

Applicant: IBM

Inventor： MCCULLOUGH KENNETH JOHN ,  PURTELL ROBERT JOSEPH ,  ROTHMAN LAURA BETH ,  WU JIN-JWANG

IPC: H01L21/302 ,  B08B7/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To eliminate etchant residue from a precision surface having residue by eliminating the residue from the surface by exposure to supercritical fluid. SOLUTION: Supercritical fluid is pressurized in advance by a high pressure pump. The supercritical fluid is preliminarily pressurized at about 3000psi before it enters a process chamber 12. The preliminarily pressurized supercritical fluid is sent to the process chamber 12 containing a semiconductor specimen through an inlet line 22. The semiconductor specimen having reactive ion etching(RIE) residue is arranged in a specimen zone 16 of the process chamber 12. The specimen is exposed to the supercritical fluid, under a condition sufficient to eliminate RIE residue from the specimen. The supercritical fluid is maintained to be higher than or equal to the critical temperature and the critical pressure.

公开(公告)号：WO2007040679A3

公开(公告)日：2009-04-30

申请号：PCT/US2006023964

申请日：2006-06-20

Applicant: IBM ,  WONG KEITH KWONG HON ,  PURTELL ROBERT JOSEPH

Inventor： WONG KEITH KWONG HON ,  PURTELL ROBERT JOSEPH

IPC: H01L21/4763

CPC classification number: H01L21/28518 ,  C23C14/16 ,  C23C14/32 ,  C23C14/345 ,  H01L21/28052 ,  H01L21/2855 ,  H01L29/66507 ,  H01L29/78

Abstract: A method and apparatus are provided in which non-directional and directional metal (e.g. Ni) deposition steps are performed in the same process chamber. A first plasma is formed for removing material from a target; a secondary plasma for increasing ion density in the material is formed in the interior of an annular electrode (e.g. a Ni ring) connected to an RF generator. Material is deposited non-directionally on the substrate in the absence of the secondary plasma and electrical biasing of the substrate, and deposited directionally when the secondary plasma is present and the substrate is electrically biased. Nickel silicide formed from the deposited metal has a lower gate polysilicon sheet resistance and may have a lower density of pipe defects than NiSi formed from metal deposited in a solely directional process, and has a lower source/drain contact resistance than NiSi formed from metal deposited in a solely non-directional process.

Abstract translation: 提供了一种方法和装置，其中在相同的处理室中执行非定向和定向金属（例如Ni）沉积步骤。 形成第一等离子体以从靶中去除材料; 在连接到RF发生器的环形电极（例如Ni环）的内部形成用于增加材料中的离子密度的二次等离子体。 在不存在基板的二次等离子体和电偏置的情况下，材料被非定向地沉积在基板上，并且当存在二次等离子体并且基板被电偏置时定向沉积材料。 由沉积金属形成的硅化镍具有较低的栅极多晶硅薄层电阻，并且可能具有比仅在单向定向工艺中沉积的金属形成的NiSi更低的管缺陷密度，并且具有比由金属沉积形成的NiSi更低的源/漏接触电阻 在一个单一的无方向的过程。