FORMING METHOD OF CLEAN PRECISION SURFACE

    公开(公告)号:JPH10125644A

    公开(公告)日:1998-05-15

    申请号:JP27892397

    申请日:1997-10-13

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To eliminate etchant residue from a precision surface having residue by eliminating the residue from the surface by exposure to supercritical fluid. SOLUTION: Supercritical fluid is pressurized in advance by a high pressure pump. The supercritical fluid is preliminarily pressurized at about 3000psi before it enters a process chamber 12. The preliminarily pressurized supercritical fluid is sent to the process chamber 12 containing a semiconductor specimen through an inlet line 22. The semiconductor specimen having reactive ion etching(RIE) residue is arranged in a specimen zone 16 of the process chamber 12. The specimen is exposed to the supercritical fluid, under a condition sufficient to eliminate RIE residue from the specimen. The supercritical fluid is maintained to be higher than or equal to the critical temperature and the critical pressure.

    METHOD FOR STICKING THIN FILM TO NANOMETER STRUCTURE

    公开(公告)号:JP2002225000A

    公开(公告)日:2002-08-13

    申请号:JP2001369501

    申请日:2001-12-04

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a method for sticking a thin film to a nanometer structure. SOLUTION: The method is to stick the thin film to the nanometer structure preparing an aerogel material or a coating that can be formed as a metal seed layer. The coating is mixed with a supercritical composition to form a supercritical coating composition. The supercritical coating composition is stuck to the nanometer structure under a supercritical condition. Then the supercritical condition is eliminated and the supercritical composition is removed to solidify the coating into a solid thin film.

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