公开(公告)号：HK1055508A1

公开(公告)日：2004-01-09

申请号：HK03107752

申请日：2003-10-28

Applicant: IBM

Inventor： CULP JAMES ,  NAYAK JAWAHAR ,  RAUSCH WERNER ,  SHERONY MELANIE ,  VOLDMAN STEVEN ,  ZANDMER NOAH

IPC: H01L21/822 ,  H01L27/04 ,  H01L29/10 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861 ,  H01L

Abstract: A semiconductor chip includes a semiconductor substrate having a rectifying contact diffusion and a non-rectifying contact diffusion. A halo diffusion is adjacent the rectifying contact diffusion and no halo diffusion is adjacent the non-rectifying contact diffusion. The rectifying contact diffusion can be a source/drain diffusion of an FET to improve resistance to punch-through. The non-rectifying contact diffusion may be an FET body contact, a lateral diode contact, or a resistor or capacitor contact. Avoiding a halo for non-rectifying contacts reduces series resistance and improves device characteristics. In another embodiment on a chip having devices with halos adjacent diffusions, no halo diffusion is adjacent a rectifying contact diffusion of a lateral diode, significantly improving ideality of the diode and increasing breakdown voltage.