公开(公告)号：WO0195369A3

公开(公告)日：2002-05-16

申请号：PCT/GB0102273

申请日：2001-05-23

Applicant: IBM ,  IBM UK

Inventor： CULP JAMES ,  NAYAK JAWAHAR ,  RAUSCH WERNER ,  SHERONY MELANIE ,  VOLDMAN STEVEN ,  ZAMDMER NOAH

IPC: H01L27/04 ,  H01L21/822 ,  H01L29/10 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

CPC classification number: H01L29/4966 ,  H01L29/1083 ,  H01L29/7835

Abstract: A semiconductor chip includes a semiconductor substrate having a rectifying contact diffusion and a non-rectifying contact diffusion. A halo diffusion is adjacent the rectifying contact diffusion and no halo diffusion is adjacent the non-rectifying contact diffusion. The rectifying contact diffusion can be a source/drain diffusion of an FET to improve resistance to punch-through. The non-rectifying contact diffusion may be an FET body contact, a lateral diode contact, or a resistor or capacitor contact. Avoiding a halo for non-rectifying contacts reduces series resistance and improves device characteristics. In another embodiment on a chip having devices with halos adjacent diffusions, no halo diffusion is adjacent a rectifying contact diffusion of a lateral diode, significantly improving ideality of the diode and increasing breakdown voltage.

Abstract translation: 半导体芯片包括具有整流接触扩散和非整流接触扩散的半导体衬底。 光晕扩散与整流接触扩散相邻，并且没有晕圈扩散与非整流接触扩散相邻。 整流接触扩散可以是FET的源极/漏极扩散，以提高耐穿透性。 非整流接触扩散可以是FET体接触，横向二极管接触或电阻或电容器接触。 避免使用非整流触点的光圈可以降低串联电阻并提高器件特性。 在具有相邻扩散的光晕的器件的芯片的另一实施例中，没有卤素扩散与横向二极管的整流接触扩散相邻，从而显着地提高了二极管的理想性并增加了击穿电压。

公开(公告)号：HK1055508A1

公开(公告)日：2004-01-09

申请号：HK03107752

申请日：2003-10-28

Applicant: IBM

Inventor： CULP JAMES ,  NAYAK JAWAHAR ,  RAUSCH WERNER ,  SHERONY MELANIE ,  VOLDMAN STEVEN ,  ZANDMER NOAH

IPC: H01L21/822 ,  H01L27/04 ,  H01L29/10 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861 ,  H01L

Abstract: A semiconductor chip includes a semiconductor substrate having a rectifying contact diffusion and a non-rectifying contact diffusion. A halo diffusion is adjacent the rectifying contact diffusion and no halo diffusion is adjacent the non-rectifying contact diffusion. The rectifying contact diffusion can be a source/drain diffusion of an FET to improve resistance to punch-through. The non-rectifying contact diffusion may be an FET body contact, a lateral diode contact, or a resistor or capacitor contact. Avoiding a halo for non-rectifying contacts reduces series resistance and improves device characteristics. In another embodiment on a chip having devices with halos adjacent diffusions, no halo diffusion is adjacent a rectifying contact diffusion of a lateral diode, significantly improving ideality of the diode and increasing breakdown voltage.

公开(公告)号：AU5859401A

公开(公告)日：2001-12-17

申请号：AU5859401

申请日：2001-05-23

Applicant: IBM

Inventor： NAYAK JAWAHAR ,  RAUSCH WERNER ,  SHERONY MELANIE ,  VOLDMAN STEVEN ,  ZAMDMER NOAH

IPC: H01L27/04 ,  H01L21/822 ,  H01L29/10 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

Abstract: A semiconductor chip includes a semiconductor substrate having a rectifying contact diffusion and a non-rectifying contact diffusion. A halo diffusion is adjacent the rectifying contact diffusion and no halo diffusion is adjacent the non-rectifying contact diffusion. The rectifying contact diffusion can be a source/drain diffusion of an FET to improve resistance to punch-through. The non-rectifying contact diffusion may be an FET body contact, a lateral diode contact, or a resistor or capacitor contact. Avoiding a halo for non-rectifying contacts reduces series resistance and improves device characteristics. In another embodiment on a chip having devices with halos adjacent diffusions, no halo diffusion is adjacent a rectifying contact diffusion of a lateral diode, significantly improving ideality of the diode and increasing breakdown voltage.

公开(公告)号：DE60137927D1

公开(公告)日：2009-04-23

申请号：DE60137927

申请日：2001-05-23

Applicant: IBM

Inventor： CULP JAMES ,  NAYAK JAWAHAR ,  RAUSCH WERNER ,  SHERONY MELANIE ,  VOLDMAN STEVEN ,  ZAMDMER NOAH

IPC: H01L21/00 ,  H01L27/04 ,  H01L21/822 ,  H01L29/10 ,  H01L29/49 ,  H01L29/739 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

Abstract: A semiconductor chip includes a semiconductor substrate having a rectifying contact diffusion and a non-rectifying contact diffusion. A halo diffusion is adjacent the rectifying contact diffusion and no halo diffusion is adjacent the non-rectifying contact diffusion. The rectifying contact diffusion can be a source/drain diffusion of an FET to improve resistance to punch-through. The non-rectifying contact diffusion may be an FET body contact, a lateral diode contact, or a resistor or capacitor contact. Avoiding a halo for non-rectifying contacts reduces series resistance and improves device characteristics. In another embodiment on a chip having devices with halos adjacent diffusions, no halo diffusion is adjacent a rectifying contact diffusion of a lateral diode, significantly improving ideality of the diode and increasing breakdown voltage.

公开(公告)号：AT425551T

公开(公告)日：2009-03-15

申请号：AT01931903

申请日：2001-05-23

Applicant: IBM

Inventor： CULP JAMES ,  NAYAK JAWAHAR ,  RAUSCH WERNER ,  SHERONY MELANIE ,  VOLDMAN STEVEN ,  ZAMDMER NOAH

IPC: H01L21/00 ,  H01L27/04 ,  H01L21/822 ,  H01L29/10 ,  H01L29/49 ,  H01L29/739 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

Abstract: A semiconductor chip includes a semiconductor substrate having a rectifying contact diffusion and a non-rectifying contact diffusion. A halo diffusion is adjacent the rectifying contact diffusion and no halo diffusion is adjacent the non-rectifying contact diffusion. The rectifying contact diffusion can be a source/drain diffusion of an FET to improve resistance to punch-through. The non-rectifying contact diffusion may be an FET body contact, a lateral diode contact, or a resistor or capacitor contact. Avoiding a halo for non-rectifying contacts reduces series resistance and improves device characteristics. In another embodiment on a chip having devices with halos adjacent diffusions, no halo diffusion is adjacent a rectifying contact diffusion of a lateral diode, significantly improving ideality of the diode and increasing breakdown voltage.