公开(公告)号：DE3886754D1

公开(公告)日：1994-02-10

申请号：DE3886754

申请日：1988-10-19

Applicant: IBM DEUTSCHLAND

Inventor： BAYER THOMAS ,  BARTHA JOHANN DR ,  GRESCHNER JOHANN DR ,  KERN DIETER ,  MATTERN VOLKER ,  STOEHR ROLAND

IPC: C08J7/00 ,  C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/20

Abstract: The invention relates to a vacuum reactor for etching thermally poorly conducting substrates with a high etching rate uniformity, in which the substrates (33) to be etched are arranged in a holder (35, 36) at a specific distance from the cathode (31) to which RF energy is applied. In an advantageous embodiment of the invention, the cathode is raised in the region of the substrate (33) to be etched and brought up to the underside of the substrate as far as a distance of approximately 0.2 mm. The cathode consists of aluminium, and is provided in the region of the substrate to be etched with a layer (32) acting as a complete radiator. The heat formed during the RIE is dissipated by thermal radiation, and the radiation reflected back onto the substrates from the cathode is absorbed by the layer (32). The invention also comprises a process for etching thermally poorly conducting substrates, in particular for etching plastic substrates.