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6 records (took 0.02 seconds)

    1.
    发明专利
    未知

    公开(公告)号：DE3773904D1

    公开(公告)日：1991-11-21

    申请号：DE3773904

    申请日：1987-03-27

    Applicant: IBM DEUTSCHLAND

    Inventor： BAYER THOMAS ,  ELSAESSER MICHAEL ,  GRESCHNER JOHANN DR ,  SCHMID HEINRICH ,  STOEHR ROLAND R ,  WOLTER OLAF DR ,  WITTLINGER JUERGEN

    IPC: G01R31/26 ,  G01R1/073 ,  G01R31/28

    Abstract: The contact pin arrangement exhibits below an embedment of the contact pins (2) in a plastic compound, a stack (1, 1a) of perforated plates through which the contact pins extend. The stack of perforated plates consists of two types of perforated plates. The first one is formed by the lowermost perforated plates (1a). They exhibit round or square holes which ensure a perpendicular placement of the contact pins on the contact areas (4) of the test specimen (5). The perforated plates (1) of the second type exhibit nothing but elongated holes, rectangular, square, circular, elliptic or trapezoidal holes (3). Of in each case three perforated plates of the second type stacked on top of one another, the centre one is offset with respect to the other two which are aligned with one another, in such a manner that each contact pin is enclosed by a part of the lower edge of the hole of the top and a part of the upper edge of the hole of the centre and by a part of the lower edge of the hole of the centre and a part of the upper edge of the hole of the lower perforated plate. As a result, the contact pin can bend at the most to the part of the hole wall limiting its maximum bending with an axial load. This ensures a sufficiently low contact resistance between the contact pin and the contact area of the test specimen. The contact pins can be adapted to differences in the height of the contact areas of the test specimen due to unevennesses of the surface of the test specimen by a correspondingly selected number of perforated plates of the second type.

    3.
    发明专利
    未知

    公开(公告)号：DE3886754D1

    公开(公告)日：1994-02-10

    申请号：DE3886754

    申请日：1988-10-19

    Applicant: IBM DEUTSCHLAND

    Inventor： BAYER THOMAS ,  BARTHA JOHANN DR ,  GRESCHNER JOHANN DR ,  KERN DIETER ,  MATTERN VOLKER ,  STOEHR ROLAND

    IPC: C08J7/00 ,  C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/20

    Abstract: The invention relates to a vacuum reactor for etching thermally poorly conducting substrates with a high etching rate uniformity, in which the substrates (33) to be etched are arranged in a holder (35, 36) at a specific distance from the cathode (31) to which RF energy is applied. In an advantageous embodiment of the invention, the cathode is raised in the region of the substrate (33) to be etched and brought up to the underside of the substrate as far as a distance of approximately 0.2 mm. The cathode consists of aluminium, and is provided in the region of the substrate to be etched with a layer (32) acting as a complete radiator. The heat formed during the RIE is dissipated by thermal radiation, and the radiation reflected back onto the substrates from the cathode is absorbed by the layer (32). The invention also comprises a process for etching thermally poorly conducting substrates, in particular for etching plastic substrates.

    4.
    发明专利
    未知

    公开(公告)号：DE3786549D1

    公开(公告)日：1993-08-19

    申请号：DE3786549

    申请日：1987-03-27

    Applicant: IBM DEUTSCHLAND

    Inventor： BARTHA JOHANN DR ,  BAYER THOMAS ,  GRESCHNER JOHANN DR ,  WITTLINGER JUERGEN

    IPC: H01L21/302 ,  B26F1/28 ,  G03F1/20 ,  G03F7/00 ,  G03F7/12 ,  G03F7/40 ,  H01L21/3065 ,  H01L21/48 ,  H05K1/00 ,  H05K1/03 ,  H05K3/00 ,  H05K3/42 ,  G03F1/00 ,  H01L21/66

    Abstract: Micromechanical components of any shape are made from plane parallel polymer panels or through holes of any shape are made in these by: (A) producing a mask by: (a) applying a 2-10 micron thick photoresist coating to both sides of a polymer substrate; (b) producing the required pattern by simultaneous selective exposure of both front and back photoresist coatings, so that the masks are aligned with an accuracy of ca. +/- 1-2 microns; and (c) developing and, if necessary, post-curing the photoresist coatings; (B) producing the components or through-holes by reactive ion etching (RIE) from the front and then the back, each to a depth up to ca. 2/3 of the substrate thickness, using an oxygen plasma with a pressure of 1-50 microbar; and (C) stripping the photoresist masks from the front and back of the substrate.

    Method and device for interferometric thickness measurement
    6.
    发明专利
    Method and device for interferometric thickness measurement 未知

    公开(公告)号：DE3136887A1

    公开(公告)日：1983-03-31

    申请号：DE3136887

    申请日：1981-09-17

    Applicant: IBM DEUTSCHLAND

    Inventor： BAYER THOMAS ,  KAUS GERHARD ,  KEMPF JUERGEN DIPL PHYS DR ,  SCHMID GERHARD DIPL PHYS DR

    IPC: G01B11/06

    Abstract: For the purpose of interferometric measurement of the thickness of a varying layer (10) made from opaque material, use is made of a reference beam (J2) which is reflected at a point of the opaque material which is protected against etching by a transparent layer (11). This reference beam is polarised in the plane of incidence, and is directed onto the transparent layer at the Brewster angle ( theta b). The measuring beam (J1) is polarised at right angles to the plane of incidence and is directed alternately onto the etched part of the opaque material and onto a point of the transparent layer, in order to determine the instantaneous thickness (tm) of the transparent layer (11), which is likewise etched. The instantaneous etched depth (ts) of the opaque material can be determined from the results of the two measuring steps.

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