公开(公告)号：DE4029608A1

公开(公告)日：1992-04-02

申请号：DE4029608

申请日：1990-09-19

Applicant: IBM DEUTSCHLAND

Inventor： WOLTER OLAF DR ,  BARTHA JOHANN DR

IPC: H01G9/02 ,  H01G9/025 ,  H01L27/108 ,  H01L29/92

Abstract: The capactor (30) has a capacitorplate (31a) provided by a zone of the semiconductor substrate which is limited by a passivation layer. The second capacitor plate (31b) is provided by an electrically conductive layer applied to the surface of the semiconductor substrate. A thin layer (32) of an in conducting solid material is provided between the two material is provided between the two capacitor plates (31a, 31b). The ion conducting layer (32) comprises Rb Ag 4 J5 exhibiting a high in conductivity for Ag + ions at room temperature. USE - For dynamic random access memory cell.

公开(公告)号：DE3886754D1

公开(公告)日：1994-02-10

申请号：DE3886754

申请日：1988-10-19

Applicant: IBM DEUTSCHLAND

Inventor： BAYER THOMAS ,  BARTHA JOHANN DR ,  GRESCHNER JOHANN DR ,  KERN DIETER ,  MATTERN VOLKER ,  STOEHR ROLAND

IPC: C08J7/00 ,  C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/20

Abstract: The invention relates to a vacuum reactor for etching thermally poorly conducting substrates with a high etching rate uniformity, in which the substrates (33) to be etched are arranged in a holder (35, 36) at a specific distance from the cathode (31) to which RF energy is applied. In an advantageous embodiment of the invention, the cathode is raised in the region of the substrate (33) to be etched and brought up to the underside of the substrate as far as a distance of approximately 0.2 mm. The cathode consists of aluminium, and is provided in the region of the substrate to be etched with a layer (32) acting as a complete radiator. The heat formed during the RIE is dissipated by thermal radiation, and the radiation reflected back onto the substrates from the cathode is absorbed by the layer (32). The invention also comprises a process for etching thermally poorly conducting substrates, in particular for etching plastic substrates.

公开(公告)号：DE3786549D1

公开(公告)日：1993-08-19

申请号：DE3786549

申请日：1987-03-27

Applicant: IBM DEUTSCHLAND

Inventor： BARTHA JOHANN DR ,  BAYER THOMAS ,  GRESCHNER JOHANN DR ,  WITTLINGER JUERGEN

IPC: H01L21/302 ,  B26F1/28 ,  G03F1/20 ,  G03F7/00 ,  G03F7/12 ,  G03F7/40 ,  H01L21/3065 ,  H01L21/48 ,  H05K1/00 ,  H05K1/03 ,  H05K3/00 ,  H05K3/42 ,  G03F1/00 ,  H01L21/66

Abstract: Micromechanical components of any shape are made from plane parallel polymer panels or through holes of any shape are made in these by: (A) producing a mask by: (a) applying a 2-10 micron thick photoresist coating to both sides of a polymer substrate; (b) producing the required pattern by simultaneous selective exposure of both front and back photoresist coatings, so that the masks are aligned with an accuracy of ca. +/- 1-2 microns; and (c) developing and, if necessary, post-curing the photoresist coatings; (B) producing the components or through-holes by reactive ion etching (RIE) from the front and then the back, each to a depth up to ca. 2/3 of the substrate thickness, using an oxygen plasma with a pressure of 1-50 microbar; and (C) stripping the photoresist masks from the front and back of the substrate.