公开(公告)号：WO03022732A3

公开(公告)日：2003-09-04

申请号：PCT/EP0208553

申请日：2002-07-31

Applicant: INFINEON TECHNOLOGIES AG ,  AIGNER ROBERT ,  PLOETZ FLORIAN

Inventor： AIGNER ROBERT ,  PLOETZ FLORIAN

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/02 ,  H01L21/764 ,  H01L23/522 ,  H01L27/08

CPC classification number: B81C1/00158 ,  B81C2201/014 ,  H01L21/764 ,  H01L23/5227 ,  H01L27/08 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a method for the production of a membrane, which only requires two lithographic steps. Said method has the advantage that membranes which are extensively compatible with existing CMOS, BiCMOS and bipolar processes can be produced. Furthermore membranes produced thus do not place increased requirements on the packages used, such that an economical production of the total system is guaranteed.

Abstract translation: 根据提供了一种用于制造膜的方法的本发明仅需要两个平版印刷步骤。 本发明的方法具有的优点是膜可以由与现有的CMOS，BiCMOS工艺或双极工艺基本上相容。 此外，以这种方法制备的膜没有在包装上的需求增加，从而使成本效益的生产整个系统能够得到保证。

公开(公告)号：WO0146664A3

公开(公告)日：2001-12-27

申请号：PCT/EP0012672

申请日：2000-12-13

Applicant: INFINEON TECHNOLOGIES AG ,  AIGNER ROBERT ,  MICHAELIS SVEN ,  BRAUER MICHAEL ,  PLOETZ FLORIAN

Inventor： AIGNER ROBERT ,  MICHAELIS SVEN ,  BRAUER MICHAEL ,  PLOETZ FLORIAN

IPC: G01P15/08 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01P1/02 ,  H01L21/301 ,  H01L29/84

CPC classification number: B81B7/007 ,  B81C1/00888 ,  G01P1/023 ,  G01P2015/0828 ,  Y10T29/49126 ,  Y10T29/49155 ,  Y10T29/49204 ,  Y10T29/49222 ,  Y10T29/49798 ,  Y10T29/49813 ,  Y10T83/02 ,  Y10T83/0581

Abstract: A micromechanical structure (17) disposed on a base body (1) requires protection from environmental influences by means of a covering (2) while at the same time electrical contacts (9) for connecting the micromechanical structure are required. The inventive method makes it possible to bare the electric contact (9) by partially (19) or completely (20) sawing through the structure.

Abstract translation: 布置在基体（1）上的微机械结构（17）需要通过覆盖体（2）保护免受环境影响。 此外，电触点（9）对于接触微机械结构是必需的。 通过熟练地执行缩进（19）和Durchsägung（20），可以暴露电触点（9）。

公开(公告)号：DE10004393C1

公开(公告)日：2002-02-14

申请号：DE10004393

申请日：2000-02-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  PLOETZ FLORIAN ,  MICHAELIS SVEN

IPC: B81B3/00 ,  H01H1/20 ,  H01H59/00

Abstract: A microrelay has a switching part which is pivotably suspended on a substrate and can be moved into two alternative switching states like a rocker, by electrostatic attraction through the use of suitably attached electrodes. The switching function is brought about by electrodes which are fastened to the substrate above the rocker being shorted by metallizations or contact electrodes on an upper side of the switching part.

公开(公告)号：DE50007326D1

公开(公告)日：2004-09-09

申请号：DE50007326

申请日：2000-12-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  MICHAELIS SVEN ,  BRAUER MICHAEL ,  PLOETZ FLORIAN

IPC: G01P15/08 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01P1/02 ,  H01L21/301 ,  H01L29/84

Abstract: A micromechanical structure is described which is disposed on a base body and requires protection from environmental influences by a covering body. Furthermore, electrical contacts are necessary for establishing contacts for the micromechanical structure. By skillfully carrying out a sawing-into operation and a sawing-through operation, it is possible to expose the electrical contact.

公开(公告)号：AT272845T

公开(公告)日：2004-08-15

申请号：AT00993537

申请日：2000-12-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  MICHAELIS SVEN ,  BRAUER MICHAEL ,  PLOETZ FLORIAN

IPC: G01P15/08 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01P1/02 ,  H01L21/301 ,  H01L29/84

Abstract: A micromechanical structure is described which is disposed on a base body and requires protection from environmental influences by a covering body. Furthermore, electrical contacts are necessary for establishing contacts for the micromechanical structure. By skillfully carrying out a sawing-into operation and a sawing-through operation, it is possible to expose the electrical contact.

公开(公告)号：DE10144847A1

公开(公告)日：2003-03-27

申请号：DE10144847

申请日：2001-09-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  PLOETZ FLORIAN

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/02 ,  H01L21/764 ,  H01L23/522 ,  H01L27/08 ,  H01L21/316 ,  H01L23/58

Abstract: Production of a membrane (8) on a semiconductor substrate (1) comprises preparing the substrate; forming first trenches in the substrate; applying a first dielectric material so that the trenches are filled with the dielectric material and a dielectric layer (4) is formed on the surface of the substrate; forming openings in the dielectric layer; isotropically etching the substrate selective to the first dielectric material through the openings in the dielectric layer; and applying a second dielectric material so that the openings of the first dielectric layer are closed and a membrane is formed. Preferred Features: The depth of the first trenches is larger than the depth produced by the isotropic etching. The first dielectric material is made from silicon oxide or silicon nitride. The second dielectric material is made from BPSG.

公开(公告)号：DE19962231A1

公开(公告)日：2001-07-12

申请号：DE19962231

申请日：1999-12-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  PLOETZ FLORIAN ,  MICHAELIS SVEN ,  BRAUER MICHAEL

IPC: G01P15/08 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01P1/02 ,  H01L21/301 ,  H01L29/84 ,  B81C3/00

Abstract: A micromechanical structure (17) disposed on a base body (1) requires protection from environmental influences by means of a covering (2) while at the same time electrical contacts (9) for connecting the micromechanical structure are required. The inventive method makes it possible to bare the electric contact (9) by partially (19) or completely (20) sawing through the structure.