公开(公告)号：WO0188977A3

公开(公告)日：2002-06-13

申请号：PCT/US0115759

申请日：2001-05-15

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： MANDELMAN JACK A ,  DIVAKARARUNI RAMA ,  SRINIVASAN RADHIKA ,  HO HERBERT ,  BEINTNER JOACHEN ,  LI YUJUN ,  LAROSA GIUSEPPE

IPC: H01L21/762

CPC classification number: H01L21/76229 ,  H01L21/76224

Abstract: A semiconductor device and method of manufacturing thereof are provided. A trench is formed in a semiconductor substrate. A thin oxide liner is preferably formed on surfaces of the trench. A nitride liner is formed in the trench. Charge is trapped in the nitride liner. In a preferred embodiment, the trench is filled with an oxide by an HDP process to increase the amount of charge trapped in the nitride liner. Preferably, the oxide fill is formed directly on the nitride liner.

Abstract translation: 提供半导体器件及其制造方法。 在半导体衬底中形成沟槽。 优选在沟槽的表面上形成薄的氧化物衬垫。 氮化物衬垫形成在沟槽中。 电荷被困在氮化物衬垫中。 在优选实施例中，沟槽通过HDP工艺填充氧化物以增加在氮化物衬垫中捕获的电荷量。 优选地，氧化物填充物直接形成在氮化物衬垫上。