METHOD FOR CORRECTING OPTICAL ALIGNMENT OF MULTICHANNEL OPTICAL ELEMENT MODULE

    公开(公告)号:JP2000019363A

    公开(公告)日:2000-01-21

    申请号:JP30889598

    申请日:1998-10-29

    Abstract: PROBLEM TO BE SOLVED: To make it possible to correct the deviation in alignment which occurs at the time of manufacturing a multichannel optical element module by providing the method with a step for assembling by utilizing laser welding and a step for forming at least one weld zone in the prescribed position of an optical fiber supporting base by utilizing the shrinkage effect of a welding section. SOLUTION: This method for correcting a laser corrects displacement by moving an optical fiber array 1 not only in horizontal (x), perpendicular (y) and axial (z) directions but in rotating (Rx, Ry, Rz) directions with respect to respective axes and utilizing the shrinkage effect of the welding section in order to correct the light alignment to all the directions. The optical fiber supporting base 20 includes erecting plates 21 which are erected on both sides apart a prescribed spacing in order to support an optical fiber ferrule in order to effectively apply such laser correction. These erecting plates 21 are formed to a thickness 21a as thin as about 300 to 400 micrometers and are easily shrunk by the irradiation with the laser beam, by which the regulation of the displacement is made possible.

    2.
    发明专利
    未知

    公开(公告)号:DE4424549A1

    公开(公告)日:1995-01-19

    申请号:DE4424549

    申请日:1994-07-12

    Abstract: A method of packaging a power semiconductor device is disclosed, comprising the steps of preparing a lead frame including a paddle for providing a semiconductor chip on a top surface thereof, tie bars for supporting said paddle, wherein said paddle being provided lower in horizontal surface than the leads; attaching a heat radiating plate on a bottom surface of the paddle by cladding; attaching a Kovar plate on the top surface of the paddle by soldering, said Kovar plate having similar heat expansion coefficient to that of the chip; providing the chip on the Kovar plate by soldering; wire-bonding terminals of said semiconductor chip to the corresponding leads of the lead frame, respectively; coating polyimide over the semiconductor chip by spin-coating; curing the polyimide coated thus; forming a metal cap above the said paddle by soldering, and injecting a molding material into a molder for enclosing the paddle and curing the molding material injected thus the method can be applied to produce a plastic package of a power semiconductor device at low cost. The metal cap is grounded through the tie bars as a source electrode to shield a noise.

    3.
    发明专利
    未知

    公开(公告)号:DE4424549C2

    公开(公告)日:1996-10-17

    申请号:DE4424549

    申请日:1994-07-12

    Abstract: A method of packaging a power semiconductor device is disclosed, comprising the steps of preparing a lead frame including a paddle for providing a semiconductor chip on a top surface thereof, tie bars for supporting said paddle, wherein said paddle being provided lower in horizontal surface than the leads; attaching a heat radiating plate on a bottom surface of the paddle by cladding; attaching a Kovar plate on the top surface of the paddle by soldering, said Kovar plate having similar heat expansion coefficient to that of the chip; providing the chip on the Kovar plate by soldering; wire-bonding terminals of said semiconductor chip to the corresponding leads of the lead frame, respectively; coating polyimide over the semiconductor chip by spin-coating; curing the polyimide coated thus; forming a metal cap above the said paddle by soldering, and injecting a molding material into a molder for enclosing the paddle and curing the molding material injected thus the method can be applied to produce a plastic package of a power semiconductor device at low cost. The metal cap is grounded through the tie bars as a source electrode to shield a noise.

    Method of packaging a power semiconductor device and package produced by the method

    公开(公告)号:GB2280062B

    公开(公告)日:1997-04-09

    申请号:GB9413867

    申请日:1994-07-08

    Abstract: A method of packaging a power semiconductor device is disclosed, comprising the steps of preparing a lead frame including a paddle for providing a semiconductor chip on a top surface thereof, tie bars for supporting said paddle, wherein said paddle being provided lower in horizontal surface than the leads; attaching a heat radiating plate on a bottom surface of the paddle by cladding; attaching a Kovar plate on the top surface of the paddle by soldering, said Kovar plate having similar heat expansion coefficient to that of the chip; providing the chip on the Kovar plate by soldering; wire-bonding terminals of said semiconductor chip to the corresponding leads of the lead frame, respectively; coating polyimide over the semiconductor chip by spin-coating; curing the polyimide coated thus; forming a metal cap above the said paddle by soldering, and injecting a molding material into a molder for enclosing the paddle and curing the molding material injected thus the method can be applied to produce a plastic package of a power semiconductor device at low cost. The metal cap is grounded through the tie bars as a source electrode to shield a noise.

    Method of packaging a power semiconductor device and package produced by the method

    公开(公告)号:GB2280062A

    公开(公告)日:1995-01-18

    申请号:GB9413867

    申请日:1994-07-08

    Abstract: A method of packaging a power semiconductor device is disclosed, comprising the steps of preparing a lead frame including a paddle (12) for providing a semiconductor chip (40) on a top surface thereof, and tie bars for supporting said paddle (12); wherein said paddle (12) is, provided lower in a horizontal surface than the leads (13, 14); attaching a heat radiating plate (20) on a bottom surface of the paddle (12) by cladding; attaching a Kovar plate (30) on the top surface of the paddle (12) by soldering, said Kovar plate (30) having similar heat expansion coefficient to that of the chip (40); providing the chip (40) on the Kovar plate (30) by soldering; wire-bonding terminals of said semiconductor chip (40) to the corresponding leads of the lead frame, respectively; coating polyimide over the semiconductor chip (40) by spin-coating; curing the polyimide coated thus; forming a metal cap above the said paddle (12) by soldering, and injecting a molding material into a molder for enclosing the paddle (12) and curing the molding material injected thus. The method can be applied to produce a plastic package of a power semiconductor device at low cost. The metal cap is grounded through the tie bars as a source electrode to shield against noise.

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