公开(公告)号：JP2002124523A

公开(公告)日：2002-04-26

申请号：JP2001306688

申请日：2001-10-02

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LEE JONG-LAM ,  KIM HAE-CHEON ,  MUN JAE-KYOUNG ,  PARK HYUNG-MOO

IPC: H01L29/812 ,  H01L21/338 ,  H01L21/76 ,  H01L21/8252 ,  H01L29/10 ,  H01L29/45

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device by which the influx of the parasitic carrier at the interface between a substrate and a buffer layer to a channel layer can be prevented, and to provide a method for manufacturing the semiconductor device. SOLUTION: A first GaAs buffer layer 10A which is not doped is formed on a semi-insulating GaAs substrate 70, and a superlattice layer 80 is formed on the first GaAs buffer layer 10A. A second GaAs buffer layer 10B which is of the identical material with the first GaAs buffer layer 10A and is not doped is formed on the superlattice layer 80. A channel layer 20 is formed on the second GaAs buffer layer 10B, and a surface protecting film 30 is formed on the channel layer 20.

公开(公告)号：DE4424549A1

公开(公告)日：1995-01-19

申请号：DE4424549

申请日：1994-07-12

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM DONG-GOO ,  SONG MIN-KYU ,  PARK SEONG-SU ,  KANG SEUNG-GOO ,  YOON HYUNG-JIN ,  PARK HYUNG-MOO

IPC: H01L21/52 ,  H01L23/02 ,  H01L23/04 ,  H01L23/28 ,  H01L23/433 ,  H01L23/48 ,  H01L23/495 ,  H01L23/60 ,  H01L23/66 ,  H01L23/12 ,  H01L23/36 ,  H01L21/50

Abstract: A method of packaging a power semiconductor device is disclosed, comprising the steps of preparing a lead frame including a paddle for providing a semiconductor chip on a top surface thereof, tie bars for supporting said paddle, wherein said paddle being provided lower in horizontal surface than the leads; attaching a heat radiating plate on a bottom surface of the paddle by cladding; attaching a Kovar plate on the top surface of the paddle by soldering, said Kovar plate having similar heat expansion coefficient to that of the chip; providing the chip on the Kovar plate by soldering; wire-bonding terminals of said semiconductor chip to the corresponding leads of the lead frame, respectively; coating polyimide over the semiconductor chip by spin-coating; curing the polyimide coated thus; forming a metal cap above the said paddle by soldering, and injecting a molding material into a molder for enclosing the paddle and curing the molding material injected thus the method can be applied to produce a plastic package of a power semiconductor device at low cost. The metal cap is grounded through the tie bars as a source electrode to shield a noise.

公开(公告)号：DE4424549C2

公开(公告)日：1996-10-17

申请号：DE4424549

申请日：1994-07-12

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM DONG-GOO ,  SONG MIN-KYU ,  PARK SEONG-SU ,  KANG SEUNG-GOO ,  YOON HYUNG-JIN ,  PARK HYUNG-MOO

IPC: H01L21/52 ,  H01L23/02 ,  H01L23/04 ,  H01L23/28 ,  H01L23/433 ,  H01L23/48 ,  H01L23/495 ,  H01L23/60 ,  H01L23/66 ,  H01L23/12 ,  H01L23/36 ,  H01L21/50

Abstract: A method of packaging a power semiconductor device is disclosed, comprising the steps of preparing a lead frame including a paddle for providing a semiconductor chip on a top surface thereof, tie bars for supporting said paddle, wherein said paddle being provided lower in horizontal surface than the leads; attaching a heat radiating plate on a bottom surface of the paddle by cladding; attaching a Kovar plate on the top surface of the paddle by soldering, said Kovar plate having similar heat expansion coefficient to that of the chip; providing the chip on the Kovar plate by soldering; wire-bonding terminals of said semiconductor chip to the corresponding leads of the lead frame, respectively; coating polyimide over the semiconductor chip by spin-coating; curing the polyimide coated thus; forming a metal cap above the said paddle by soldering, and injecting a molding material into a molder for enclosing the paddle and curing the molding material injected thus the method can be applied to produce a plastic package of a power semiconductor device at low cost. The metal cap is grounded through the tie bars as a source electrode to shield a noise.