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1.发明申请CIRCUIT FOR PREVENTING SELF-HEATING OF METAL-INSULATOR-TRANSITION (MIT) DEVICE AND METHOD OF FABRICATING INTEGRATED-DEVICE FOR THE SAME CIRCUIT 审中-公开用于防止金属绝缘体转变（MIT）装置的自加热的电路和用于制造相同电路的集成装置的方法
公开(公告)号：WO2009107948A3
公开(公告)日：2010-02-04
申请号：PCT/KR2009000834
申请日：2009-02-23
Applicant: KOREA ELECTRONICS TELECOMM , KIM HYUN-TAK , KIM BONG-JUN , YUN SUN-JIN , KIM DAE-YONG
Inventor： KIM HYUN-TAK , KIM BONG-JUN , YUN SUN-JIN , KIM DAE-YONG
CPC classification number: H01L27/067 , H01L49/003
Abstract: Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device (100) and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heating preventive-circuit includes a MIT device (100) that generates an abrupt MIT at a temperature equa to or greater than a critical temperature and is connected to a current driving device (500) to control the flow of current driving device, a transistor (200) that is connected to the MIT device (100) to control the self-heating of the MIT device after generating the MIT in the MIT device and a resistor (300) connected to the MIT device and the transistor.
Abstract translation: 提供了能够解决MIT装置（100）的自身加热问题的MIT装置自发热防止电路以及制造MIT装置自发热防止电路集成装置的方法。 MIT装置自发热防止电路包括MIT装置（100），其在等于或大于临界温度的温度下产生突然的MIT，并连接到电流驱动装置（500）以控制电流驱动 在MIT设备中产生MIT之后连接到MIT设备（100）以控制MIT设备的自身加热的晶体管（200）和连接到MIT设备和晶体管的电阻器（300）。
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2.发明公开CIRCUIT FOR PREVENTING SELF-HEATING OF METAL-INSULATOR-TRANSITION (MIT) DEVICE AND METHOD OF FABRICATING INTEGRATED-DEVICE FOR THE SAME CIRCUIT 有权电路自热的金属 - 绝缘体转变装置和方法，用于制造集成器件该电路的预防
公开(公告)号：EP2248169A4
公开(公告)日：2012-03-28
申请号：EP09714133
申请日：2009-02-23
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIM HYUN-TAK , KIM BONG-JUN , YUN SUN-JIN , KIM DAE-YONG
CPC classification number: H01L27/067 , H01L49/003
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