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    THREE-TERMINAL METAL-INSULATOR TRANSITION SWITCH, SWITCHING SYSTEM INCLUDING THE SAME, AND METHOD OF CONTROLLING METAL-INSULATOR TRANSITION OF THE SAME
    2.
    发明申请
    THREE-TERMINAL METAL-INSULATOR TRANSITION SWITCH, SWITCHING SYSTEM INCLUDING THE SAME, AND METHOD OF CONTROLLING METAL-INSULATOR TRANSITION OF THE SAME 审中-公开
    三端子金属 - 绝缘体转换开关，包括其的开关系统以及控制相同金属 - 绝缘体转换的方法

    公开(公告)号：WO2009014348A3

    公开(公告)日：2009-03-19

    申请号：PCT/KR2008004202

    申请日：2008-07-18

    Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

    Inventor： KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

    IPC: H01L29/08

    CPC classification number: H01L49/003

    Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

    Abstract translation: 本发明提供能够容易地控制不连续的MIT跳跃且不需要以往的栅极绝缘层的3端子MIT开关，包含3端子MIT开关的开关系统以及3端子MIT的MIT控制方法 开关。 该3端子MIT开关包括在转变电压中产生不连续MIT的2端子MIT装置，分别连接到2端子MIT装置的每个端子的入口电极和出口电极，以及控制电极 ，其连接到所述入口电极并且包括与所述入口电极的外部端子分离的外部端子，其中根据施加到所述控制电极的电压或电流来控制所述双端MIT装置的MIT。 开关系统包括3端子MIT开关，连接到入口电极的电压源，以及连接到控制电极的控制源。

    THREE-TERMINAL METAL-INSULATOR TRANSITION SWITCH, SWITCHING SYSTEM INCLUDING THE SAME, AND METHOD OF CONTROLLING METAL-INSULATOR TRANSITION OF THE SAME
    3.
    发明申请
    THREE-TERMINAL METAL-INSULATOR TRANSITION SWITCH, SWITCHING SYSTEM INCLUDING THE SAME, AND METHOD OF CONTROLLING METAL-INSULATOR TRANSITION OF THE SAME 审中-公开
    三端金属绝缘子过渡开关，包括其的开关系统及其金属绝缘体过渡控制方法

    公开(公告)号：WO2009027826A3

    公开(公告)日：2009-04-30

    申请号：PCT/IB2008002441

    申请日：2008-05-07

    Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

    Inventor： KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

    IPC: H01L49/00

    CPC classification number: H01L49/003

    Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventipnal gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode (200) and an outlet electrode (300), which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode (400), which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

    Abstract translation: 提供一种3端子MIT开关，其可以容易地控制不连续的MIT跳转，并且不需要常闭栅极绝缘层，包括3端子MIT开关的开关系统以及控制3端子MIT的MIT的方法 开关。 三端MIT开关包括一个2端MIT装置，它产生一个过渡电压的不连续MIT，一个入口电极（200）和一个出口电极（300），分别连接到两端MIT的每个端子 装置和控制电极（400），其连接到所述入口电极并且包括与所述入口电极的外部端子分离的外部端子，其中所述2端子MIT装置的MIT根据电压或 施加到控制电极的电流。 开关系统包括三端MIT开关，连接到入口电极的电压源和连接到控制电极的控制源。

    4.
    发明专利
    未知

    公开(公告)号：AT550791T

    公开(公告)日：2012-04-15

    申请号：AT08789139

    申请日：2008-05-07

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

    IPC: H01L49/00

    Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

    METHOD AND CIRCUIT FOR CONTROLLING RADIANT HEAT OF TRANSISTOR USING METAL-INSULATOR TRANSITION DEVICE
    6.
    发明申请
    METHOD AND CIRCUIT FOR CONTROLLING RADIANT HEAT OF TRANSISTOR USING METAL-INSULATOR TRANSITION DEVICE 审中-公开
    使用金属绝缘体过渡器件控制晶体管辐射热的方法和电路

    公开(公告)号：WO2009064098A3

    公开(公告)日：2009-07-30

    申请号：PCT/KR2008006630

    申请日：2008-11-11

    Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  YUN SUN-JIN

    Inventor： KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  YUN SUN-JIN

    IPC: G05F3/24

    CPC classification number: H01L25/16 ,  H01L23/62 ,  H01L2924/0002 ,  H02H3/085 ,  H02H5/047 ,  H01L2924/00

    Abstract: Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.

    Abstract translation: 提供了一种用于控制功率晶体管的发热的方法和电路，其中功率晶体管可以通过使用能够用作保险丝的金属 - 绝缘体转变（MIT）装置来防止功率晶体管的发热来保护，并且可以 半永久使用。 用于控制晶体管发热的电路包括金属 - 绝缘体转变（MIT）器件，其中在预定的临界温度下出现突发的MIT; 以及连接到驱动装置并控制对驱动装置的电源的功率晶体管，其中所述MIT装置附接到所述晶体管的表面或加热部分，并且连接到所述晶体管的基极或栅极端子或周围 电路，并且其中当晶体管的温度升高到等于或大于预定临界温度的温度时，MIT器件降低或切断晶体管的电流，以防止晶体管的发热 晶体管。

    HIGH CURRENT CONTROL CIRCUIT INCLUDING METAL-INSULATOR TRANSITION DEVICE, AND SYSTEM INCLUDING THE HIGH CURRENT CONTROL CIRCUIT
    7.
    发明申请
    HIGH CURRENT CONTROL CIRCUIT INCLUDING METAL-INSULATOR TRANSITION DEVICE, AND SYSTEM INCLUDING THE HIGH CURRENT CONTROL CIRCUIT 审中-公开
    包括金属绝缘子过渡装置的高电流控制电路和包括高电流控制电路的系统

    公开(公告)号：WO2009107993A3

    公开(公告)日：2010-02-04

    申请号：PCT/KR2009000932

    申请日：2009-02-27

    Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  KIM BONG-JUN ,  YUN SUN-JIN

    Inventor： KIM HYUN-TAK ,  KIM BONG-JUN ,  YUN SUN-JIN

    IPC: H01L25/16 ,  H01L27/06 ,  H01L49/00

    CPC classification number: H01L21/8222 ,  H01L23/62 ,  H01L27/067 ,  H01L27/082 ,  H01L2924/0002 ,  H03K17/14 ,  H03K17/567 ,  H01L2924/00

    Abstract: Provided are a high current control circuit including a metal-insulator transition (MIT) device (100) and a system including the high current control circuit so that a high current can be controlled and switched by the small-size high current control citcuit, and a heat generation problem can be solved. The high current control circuit includes the MIT device connected in a current driving device (500) and undergoing an abrupt MIT at a predetermined transition voltage; and a switching control transistor (400) connected between the current driving device and the MIT device and controlling on-off switching of the MIT device. By including the metal-insulator transition (MlT) device, the high current control circuit switches a high current that is input to or output from the current driving device. Also, the MIT device constitutes a MIT-TR composite device (1000) with a heat-preventing transistor (200) which prevents heat generation and is connected on the MIT device.

    Abstract translation: 提供了包括金属 - 绝缘体转变（MIT）器件（100）的高电流控制电路和包括高电流控制电路的系统，使得可以通过小型高电流控制电路控制和切换高电流，以及 可以解决发热问题。 高电流控制电路包括连接在电流驱动装置（500）中并在预定转换电压下经历突变MIT的MIT装置; 以及连接在电流驱动装置和MIT装置之间并控制MIT装置的开关切换的开关控制晶体管（400）。 通过包括金属 - 绝缘体转变（MlT）器件，高电流控制电路切换输入到当前驱动装置或从当前驱动装置输出的高电流。 此外，MIT装置构成具有防止热产生并连接在MIT装置上的防热晶体管（200）的MIT-TR复合装置（1000）。

    CIRCUIT FOR PREVENTING SELF-HEATING OF METAL-INSULATOR-TRANSITION (MIT) DEVICE AND METHOD OF FABRICATING INTEGRATED-DEVICE FOR THE SAME CIRCUIT
    8.
    发明申请
    CIRCUIT FOR PREVENTING SELF-HEATING OF METAL-INSULATOR-TRANSITION (MIT) DEVICE AND METHOD OF FABRICATING INTEGRATED-DEVICE FOR THE SAME CIRCUIT 审中-公开
    用于防止金属绝缘体转变（MIT）装置的自加热的电路和用于制造相同电路的集成装置的方法

    公开(公告)号：WO2009107948A3

    公开(公告)日：2010-02-04

    申请号：PCT/KR2009000834

    申请日：2009-02-23

    Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  KIM BONG-JUN ,  YUN SUN-JIN ,  KIM DAE-YONG

    Inventor： KIM HYUN-TAK ,  KIM BONG-JUN ,  YUN SUN-JIN ,  KIM DAE-YONG

    IPC: H01L25/16 ,  H01L27/06 ,  H01L49/00

    CPC classification number: H01L27/067 ,  H01L49/003

    Abstract: Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device (100) and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heating preventive-circuit includes a MIT device (100) that generates an abrupt MIT at a temperature equa to or greater than a critical temperature and is connected to a current driving device (500) to control the flow of current driving device, a transistor (200) that is connected to the MIT device (100) to control the self-heating of the MIT device after generating the MIT in the MIT device and a resistor (300) connected to the MIT device and the transistor.

    Abstract translation: 提供了能够解决MIT装置（100）的自身加热问题的MIT装置自发热防止电路以及制造MIT装置自发热防止电路集成装置的方法。 MIT装置自发热防止电路包括MIT装置（100），其在等于或大于临界温度的温度下产生突然的MIT，并连接到电流驱动装置（500）以控制电流驱动 在MIT设备中产生MIT之后连接到MIT设备（100）以控制MIT设备的自身加热的晶体管（200）和连接到MIT设备和晶体管的电阻器（300）。

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