公开(公告)号：JP2000138094A

公开(公告)日：2000-05-16

申请号：JP22906399

申请日：1999-08-13

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YUN SUN-JIN ,  KIN RYUSHIN ,  BOKU SOKI

IPC: G09F13/20 ,  C09K11/00 ,  C09K11/56 ,  C09K11/88 ,  C23C20060101 ,  C23C16/30 ,  C23C16/48 ,  H01L21/205 ,  H01L21/365 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To uniformize thickness and to stabilize reactivity by growing a PbS thin film by the atomic layer vapor deposition method or the chemical vapor deposition method, using an organic metal compound. SOLUTION: Regarding the method for manufacturing a PBX (X=S or Se) thin film, an organic metal compound containing Pb having a covalent binding with a working group is used as a Pb-precursor, and this precursor is reacted with H2X (X=S or Se), thereby forming a PBX thin film. Also, regarding the method for manufacturing a luminescent material formed out of a base material for accelerating electrons and a light emitting zone containing luminescent center ions, a base material growth and a light emitting zone growth are separated from each other, and many are alternately made to grow repeatedly. In this case, the growth is caused by adjusting ions to be present as the status of Pb2+dimer as the light emitting center ions. In addition, a luminescent material having very high color purity and brightness is manufactured by adding the Pb2+ions in a selective and specific state, regardless of the wide concentration range of Pb2.

公开(公告)号：WO2009045084A3

公开(公告)日：2009-05-28

申请号：PCT/KR2008005845

申请日：2008-10-06

Applicant: KOREA ELECTRONICS TELECOMM ,  YUN SUN-JIN ,  LEE YONG-WOOK ,  KIM HYUN-TAK ,  KIM BONG-JUN ,  LIM JUNGWOOK ,  CHOI SUNG-YOUL

Inventor： YUN SUN-JIN ,  LEE YONG-WOOK ,  KIM HYUN-TAK ,  KIM BONG-JUN ,  LIM JUNGWOOK ,  CHOI SUNG-YOUL

IPC: H01L31/10

CPC classification number: H01L27/14603 ,  H01L27/1464 ,  H01L31/113

Abstract: A photo-gating switch system comprising a photosensitive device formed on a substrate is provided. The photosensitive device may comprise a photosensitive layer and electrodes formed at both ends of the photosensitive layer. A light source irradiating light to the photosensitive device is integrated beneath the surface of the substrate.

Abstract translation: 提供了一种包括形成在衬底上的光敏器件的光电门控开关系统。 感光装置可以包括感光层和形成在感光层两端的电极。 将光照射到光敏器件的光源被集成在衬底的表面之下。

公开(公告)号：WO2009014348A3

公开(公告)日：2009-03-19

申请号：PCT/KR2008004202

申请日：2008-07-18

Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

Inventor： KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

IPC: H01L29/08

CPC classification number: H01L49/003

Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

Abstract translation: 本发明提供能够容易地控制不连续的MIT跳跃且不需要以往的栅极绝缘层的3端子MIT开关，包含3端子MIT开关的开关系统以及3端子MIT的MIT控制方法 开关。 该3端子MIT开关包括在转变电压中产生不连续MIT的2端子MIT装置，分别连接到2端子MIT装置的每个端子的入口电极和出口电极，以及控制电极 ，其连接到所述入口电极并且包括与所述入口电极的外部端子分离的外部端子，其中根据施加到所述控制电极的电压或电流来控制所述双端MIT装置的MIT。 开关系统包括3端子MIT开关，连接到入口电极的电压源，以及连接到控制电极的控制源。

公开(公告)号：WO2009027826A3

公开(公告)日：2009-04-30

申请号：PCT/IB2008002441

申请日：2008-05-07

Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

Inventor： KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

IPC: H01L49/00

CPC classification number: H01L49/003

Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventipnal gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode (200) and an outlet electrode (300), which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode (400), which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

Abstract translation: 提供一种3端子MIT开关，其可以容易地控制不连续的MIT跳转，并且不需要常闭栅极绝缘层，包括3端子MIT开关的开关系统以及控制3端子MIT的MIT的方法 开关。 三端MIT开关包括一个2端MIT装置，它产生一个过渡电压的不连续MIT，一个入口电极（200）和一个出口电极（300），分别连接到两端MIT的每个端子 装置和控制电极（400），其连接到所述入口电极并且包括与所述入口电极的外部端子分离的外部端子，其中所述2端子MIT装置的MIT根据电压或 施加到控制电极的电流。 开关系统包括三端MIT开关，连接到入口电极的电压源和连接到控制电极的控制源。

公开(公告)号：FI121962B

公开(公告)日：2011-06-30

申请号：FI19991732

申请日：1999-08-16

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YUN SUN-JIN ,  KIM YONG-SHIN ,  PARK SANG-HEE ,  CHO KYOUNG-IK ,  MA DONG-SUNG

IPC: G09F13/20 ,  C09K11/00 ,  C09K11/56 ,  C09K11/88 ,  C23C20060101 ,  C23C16/30 ,  C23C16/48 ,  H01L21/205 ,  H01L21/365 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14

Abstract: PURPOSE: A process for forming a PbX(X=S or Se) film using an atom layer deposition method and a chemical vapor deposition method and method for making a phosphor by adding PbX to the base material of CaS, CaSe, SrS, SrSe, ZnS, ZnSe, BaS, BaSe, MgS, and MgSe are provided which can produce the phosphor having good color intensity and luminance and reduce the cost of production. CONSTITUTION: In the manufacturing method of a PbX(X=S or Se) thin film, the film is formed by reacting a Pb-precursor and H2X(X=S or Se) using an organometal compound in which Pb is covalent-bonded with a functional group at 100-450°C. The product exhibits a luminance value of above 100 cd/m¬2 at AC-60 Hz. The phosphor having good color intensity and luminance is manufactured by adding a Pb ¬2+ ion to the base material selectively. The process can obtain excellent characteristics in reproducibility and uniformity and reduce the cost of production.

公开(公告)号：WO2007046628A8

公开(公告)日：2009-08-06

申请号：PCT/KR2006004228

申请日：2006-10-18

Applicant: KOREA ELECTRONICS TELECOMM ,  LIM JUNG-WOOK ,  YUN SUN-JIN ,  KIM HYUN TAK ,  CHAE BYUNG-GYU ,  KIM BONG-JUN ,  KANG KWANG-YONG

Inventor： LIM JUNG-WOOK ,  YUN SUN-JIN ,  KIM HYUN TAK ,  CHAE BYUNG-GYU ,  KIM BONG-JUN ,  KANG KWANG-YONG

IPC: H01L21/316

CPC classification number: H01B3/12 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/3162 ,  H01L49/003

公开(公告)号：WO2009064098A3

公开(公告)日：2009-07-30

申请号：PCT/KR2008006630

申请日：2008-11-11

Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  YUN SUN-JIN

Inventor： KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  YUN SUN-JIN

IPC: G05F3/24

CPC classification number: H01L25/16 ,  H01L23/62 ,  H01L2924/0002 ,  H02H3/085 ,  H02H5/047 ,  H01L2924/00

Abstract: Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.

Abstract translation: 提供了一种用于控制功率晶体管的发热的方法和电路，其中功率晶体管可以通过使用能够用作保险丝的金属 - 绝缘体转变（MIT）装置来防止功率晶体管的发热来保护，并且可以 半永久使用。 用于控制晶体管发热的电路包括金属 - 绝缘体转变（MIT）器件，其中在预定的临界温度下出现突发的MIT; 以及连接到驱动装置并控制对驱动装置的电源的功率晶体管，其中所述MIT装置附接到所述晶体管的表面或加热部分，并且连接到所述晶体管的基极或栅极端子或周围 电路，并且其中当晶体管的温度升高到等于或大于预定临界温度的温度时，MIT器件降低或切断晶体管的电流，以防止晶体管的发热 晶体管。

公开(公告)号：WO2009107993A3

公开(公告)日：2010-02-04

申请号：PCT/KR2009000932

申请日：2009-02-27

Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  KIM BONG-JUN ,  YUN SUN-JIN

Inventor： KIM HYUN-TAK ,  KIM BONG-JUN ,  YUN SUN-JIN

IPC: H01L25/16 ,  H01L27/06 ,  H01L49/00

CPC classification number: H01L21/8222 ,  H01L23/62 ,  H01L27/067 ,  H01L27/082 ,  H01L2924/0002 ,  H03K17/14 ,  H03K17/567 ,  H01L2924/00

Abstract: Provided are a high current control circuit including a metal-insulator transition (MIT) device (100) and a system including the high current control circuit so that a high current can be controlled and switched by the small-size high current control citcuit, and a heat generation problem can be solved. The high current control circuit includes the MIT device connected in a current driving device (500) and undergoing an abrupt MIT at a predetermined transition voltage; and a switching control transistor (400) connected between the current driving device and the MIT device and controlling on-off switching of the MIT device. By including the metal-insulator transition (MlT) device, the high current control circuit switches a high current that is input to or output from the current driving device. Also, the MIT device constitutes a MIT-TR composite device (1000) with a heat-preventing transistor (200) which prevents heat generation and is connected on the MIT device.

Abstract translation: 提供了包括金属 - 绝缘体转变（MIT）器件（100）的高电流控制电路和包括高电流控制电路的系统，使得可以通过小型高电流控制电路控制和切换高电流，以及 可以解决发热问题。 高电流控制电路包括连接在电流驱动装置（500）中并在预定转换电压下经历突变MIT的MIT装置; 以及连接在电流驱动装置和MIT装置之间并控制MIT装置的开关切换的开关控制晶体管（400）。 通过包括金属 - 绝缘体转变（MlT）器件，高电流控制电路切换输入到当前驱动装置或从当前驱动装置输出的高电流。 此外，MIT装置构成具有防止热产生并连接在MIT装置上的防热晶体管（200）的MIT-TR复合装置（1000）。

公开(公告)号：WO2009107948A3

公开(公告)日：2010-02-04

申请号：PCT/KR2009000834

申请日：2009-02-23

Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  KIM BONG-JUN ,  YUN SUN-JIN ,  KIM DAE-YONG

Inventor： KIM HYUN-TAK ,  KIM BONG-JUN ,  YUN SUN-JIN ,  KIM DAE-YONG

IPC: H01L25/16 ,  H01L27/06 ,  H01L49/00

CPC classification number: H01L27/067 ,  H01L49/003

Abstract: Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device (100) and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heating preventive-circuit includes a MIT device (100) that generates an abrupt MIT at a temperature equa to or greater than a critical temperature and is connected to a current driving device (500) to control the flow of current driving device, a transistor (200) that is connected to the MIT device (100) to control the self-heating of the MIT device after generating the MIT in the MIT device and a resistor (300) connected to the MIT device and the transistor.

Abstract translation: 提供了能够解决MIT装置（100）的自身加热问题的MIT装置自发热防止电路以及制造MIT装置自发热防止电路集成装置的方法。 MIT装置自发热防止电路包括MIT装置（100），其在等于或大于临界温度的温度下产生突然的MIT，并连接到电流驱动装置（500）以控制电流驱动 在MIT设备中产生MIT之后连接到MIT设备（100）以控制MIT设备的自身加热的晶体管（200）和连接到MIT设备和晶体管的电阻器（300）。

公开(公告)号：DE102012101448A1

公开(公告)日：2012-08-23

申请号：DE102012101448

申请日：2012-02-23

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YUN SUN-JIN ,  LIM JUNG-WOOK

IPC: H01L31/075 ,  H01L31/0392 ,  H01L31/065 ,  H01L31/076 ,  H01L31/18

Abstract: Bereitgestellt werden Dünnschichtsolarzellen und Verfahren zur Herstellung derselben. Die Solarzelle kann ein Substrat und eine Zelle, umfassend eine amorphe Schicht mit einem kontinuierlich abgestuften Wasserstoffgehalt, angeordnet auf dem Substrat, einen n-Halbleiter, eine p-Halbleiterschicht, eine Metallelektrode angrenzend an den n-Halbleiter, und eine transparente Elektrode angrenzend an die p-Halbleiterschicht umfassen. Der Wasserstoffgehalt der amorphen intrinsischen Halbleiterschicht nimmt auf eine kontinuierliche Art und Weise von einer ersten Kontaktfläche, auf die Licht einfällt, zu einer zweiten Kontaktfläche gegenüber der ersten Kontaktfläche ab, und die ersten und zweiten Kontaktflächen sind gegenüberliegende Oberflächen der amorphen intrinsischen Halbleiterschicht, die in Kontakt mit der p- bzw. n-Halbleiterschicht sind.