公开(公告)号：JPH05182959A

公开(公告)日：1993-07-23

申请号：JP33062091

申请日：1991-12-13

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI KIKOU ,  KIN DAIYOU ,  KIN OUSHIYU

IPC: H01L21/76 ,  H01L21/316

Abstract: PURPOSE: To provide an element isolating method with good electric characteristics even for the isolation of a 0.5 μm design role essential to the development of a highly integrated element of >=16 M bits as one of isolating methods utilizing a silicon substrate by making good use of polysilicon and eliminating a bird's beak generated by a LOCOS method. CONSTITUTION: This is a method which uses polysilicon as a material of silicon at the time of oxidation so as to form oxide for element separation; and an oxide film 12 is grown on the silicon substrate 11 and a nitride film 13 is formed to form a nitride film pattern as well as the LOCOS method. After oxide grown by etching and oxidizing a polysilicon film 15 is etched to above the nitride film by utilizing an etching baking process, the nitride film and oxide film are etched similarly to the advance in the LOCOS process to form the oxide for element separation.