公开(公告)号：JPH03180066A

公开(公告)日：1991-08-06

申请号：JP22953590

申请日：1990-08-29

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI KIKOU ,  KIN DAIYOU ,  RI CHINKOU ,  KIN SENJIYU

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

Abstract: PURPOSE: To enlarge the area of a storage capacitor by depositing n polysilicon on a dielectric layer while coupling with an n diffused layer around a trench and on the bottom thereof thereby forming a plate. CONSTITUTION: After forming a primary dielectric layer 43a for capacitor in a trench, n doped polysilicon is deposited to form a secondary dielectric layer 43b. Subsequently, polysilicon is deposited thereon continuously to an n diffused layer around a trench and on the bottom thereof thus forming a plate 45. Since the capacitor between a polysilicon storage electrode 41 and the n diffusion plate 45, as well as the capacitor between the n polysilicon storage electrode 41 and the n diffused plate 45, can be utilized entirely as a storage capacitor, surface efficiency of the storage capacitor can be enhanced.