公开(公告)号：FR2728390A1

公开(公告)日：1996-06-21

申请号：FR9415630

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SONG YOON HO ,  PARK KYUNG HO ,  NAM KEE SOO

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L21/324

Abstract: A process for formation of a thin film transistor which can be usefully applied to a high picture quality active matrix liquid crystal display is disclosed. Particularly, a process for formation of an improved polysilicon thin film transistor is disclosed. In the process for formation of a polysilicon thin film transistor, the solid phase crystallization of a non-crystalline silicon is carried out under a high pressure oxygen atmosphere, and therefore, the solid phase crystallization time for a non-crystalline silicon is shortened so as to improve the productivity, and the grain size of the polysilicon is made more uniform so as improve the electrical characteristics of the TFT (thin film transistor).

公开(公告)号：NL1010905C2

公开(公告)日：2004-05-03

申请号：NL1010905

申请日：1998-12-24

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LEE JIN HYO ,  RHEE HEUNG-SOO ,  YU HYUN KYU ,  KIM BO WOO ,  NAM KEE SOO

IPC: H01L21/76 ,  H01L21/763 ,  H01L21/822 ,  H01L27/04 ,  H01L27/08 ,  H01L21/02

公开(公告)号：NL1010905A1

公开(公告)日：1999-06-29

申请号：NL1010905

申请日：1998-12-24

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LEE JIN HYO ,  RHEE HEUNG-SOO ,  YU HYUN KYU ,  KIM BO WOO ,  NAM KEE SOO

IPC: H01L21/76 ,  H01L21/763 ,  H01L21/822 ,  H01L27/04 ,  H01L27/08 ,  H01L21/82 ,  C23C8/04 ,  C23C18/08 ,  H01L29/86

Abstract: The present invention relates to a on silicon substrate, specifically to an inductor device and manufacturing method thereof for enhancing the quality factor of the inductor by disposing trenches on a silicon substratre, and by filling the inside of the trenches with polycrystalline polysilicon not doped with impurities. The present invention provides an inductor device and a manufacturing method thereof which can improve the quality factor by increasing resistance of the substrate by forming deep trenches disposed in specific patterns on a low-resistance silicon substrate and filling polycrystalline silicon not doped with impurities, and by reducing parasitic capacitance between the inductor and the silicon substrate.