公开(公告)号：NL1010905C2

公开(公告)日：2004-05-03

申请号：NL1010905

申请日：1998-12-24

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LEE JIN HYO ,  RHEE HEUNG-SOO ,  YU HYUN KYU ,  KIM BO WOO ,  NAM KEE SOO

IPC: H01L21/76 ,  H01L21/763 ,  H01L21/822 ,  H01L27/04 ,  H01L27/08 ,  H01L21/02

公开(公告)号：NL1010905A1

公开(公告)日：1999-06-29

申请号：NL1010905

申请日：1998-12-24

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： LEE JIN HYO ,  RHEE HEUNG-SOO ,  YU HYUN KYU ,  KIM BO WOO ,  NAM KEE SOO

IPC: H01L21/76 ,  H01L21/763 ,  H01L21/822 ,  H01L27/04 ,  H01L27/08 ,  H01L21/82 ,  C23C8/04 ,  C23C18/08 ,  H01L29/86

Abstract: The present invention relates to a on silicon substrate, specifically to an inductor device and manufacturing method thereof for enhancing the quality factor of the inductor by disposing trenches on a silicon substratre, and by filling the inside of the trenches with polycrystalline polysilicon not doped with impurities. The present invention provides an inductor device and a manufacturing method thereof which can improve the quality factor by increasing resistance of the substrate by forming deep trenches disposed in specific patterns on a low-resistance silicon substrate and filling polycrystalline silicon not doped with impurities, and by reducing parasitic capacitance between the inductor and the silicon substrate.