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公开(公告)号：JPH10188864A
公开(公告)日：1998-07-21
申请号：JP26695097
申请日：1997-09-30
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SONG YOON HO , LEE JIN HO , CHO KYOUNG IK , YOO HYUNG JOUN
IPC: H01J29/96 , G09F9/30 , G09G3/20 , G09G3/22 , H01J1/30 , H01J29/04 , H01J31/12 , H04N9/12 , H01J31/15
Abstract: PROBLEM TO BE SOLVED: To manufacture a field emission display of high picture quality and high density by reducing a cost. SOLUTION: A field emission element of a pixel array 20 is constituted by a silicon field emission element formed on an insulating substrate 10 so that a complementary polycrystalline silicon thin film transistor used as a basic circuit of a scan drive circuit 30 and a data drive circuit 10 can be easily integrated in the substrate 10 formed with the pixel array 20. In each pixel of the pixel array 20, a high voltage thin film transistor is attached, by applying a display signal through the high voltage thin film transistor, generation of low voltage in the scan and data drive circuit 30, 40 is attained.
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2.发明申请
公开(公告)号：WO2009078581A3
公开(公告)日：2009-08-06
申请号：PCT/KR2008006683
申请日：2008-11-13
Applicant: KOREA ELECTRONICS TELECOMM , KIM DAE JUN , SONG YOON HO , JEONG JIN WOO
Inventor： KIM DAE JUN , SONG YOON HO , JEONG JIN WOO
IPC: H01J35/04
CPC classification number: H01J35/065 , H01J35/14 , H01J35/16 , H01J2235/062 , H01J2235/068 , H01J2235/087 , H01J2235/164 , H01J2235/186
Abstract: A microminiature X-ray tube with a triode structure using a nano emitter is provided, which can increase a field emission region as much as possible by means of nano emitters fine-patterned in a cathode to not only increase an emission current per unit area as much as possible but secure high electrical characteristics, reliability, and structural stability by means of a cover and a bonding material. In addition, gate holes having a macro structure can be formed in the gate to promote electron beam focusing by means of the gate without using a separate focusing electrode and to prevent a leakage current from occurring on the gate. Further, an auxiliary electrode can be formed on a top or an inner surface of a cover applied for structural stability to further promote the electron beam focusing and to control the output amounts per individual X-ray tubes output according to current switching to be equal to each other.
Abstract translation: 提供了一种使用纳米发射器的具有三极管结构的微型X射线管，其可以通过在阴极中精细图案化的纳米发射器尽可能多地增加场发射区域，从而不仅增加每单位面积的发射电流， 尽可能多地但借助于盖和粘合材料确保高电特性，可靠性和结构稳定性。 此外，可以在栅极中形成具有宏观结构的栅极孔，以通过栅极促进电子束聚焦而不使用单独的聚焦电极，并且防止在栅极上发生泄漏电流。 此外，可以在用于结构稳定性的盖的顶部或内表面上形成辅助电极，以进一步促进电子束聚焦并且将根据电流切换输出的每个单独X射线管的输出量控制为等于 彼此。
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公开(公告)号：AT447236T
公开(公告)日：2009-11-15
申请号：AT03029789
申请日：2003-12-23
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SONG YOON HO , HWANG CHI SUN , CHUNG CHOONG HEUI , LEE JIN HO
Abstract: The present invention relates to a field emission display in which a gate plate having a gate hole and a gate electrode around the gate hole is formed between an anode plate having phosphor and a cathode plate having a field emitter and a control device for controlling field emission current, wherein the field emitter of the cathode plate is constructed to be opposite to the phosphor of the anode plate through the gate hole. According to the present invention, it is possible to significantly reduce the display row/column driving voltage by applying scan and data signals of the field emission display to the control device of each pixel, and the present invention is directed to improve the brightness of the field emission display in such a manner that the electric field necessary for field emission is applied through the gate electrode of the gate plate to freely control the distance between the anode plate and the cathode plate, so that a high voltage can be applied to the anode.
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公开(公告)号：FR2757676B1
公开(公告)日：2000-02-11
申请号：FR9711999
申请日：1997-09-26
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SONG YOON HO , LEE JIN HO , CHO KYOUNG IK , YOO HYUNG JOUN
IPC: H01J29/96 , G09F9/30 , G09G3/20 , G09G3/22 , H01J1/30 , H01J29/04 , H01J31/12 , H04N9/12 , H01J29/46
Abstract: The present invention relates to a field emission display which applies a field emission device (or field emitter) to a flat panel display. The field emission display in accordance with the present invention has the lower plate in which the pixel array and the scan and data driving circuits are integrated one insulating substrate, therefore, it is possible to implement a field emission display capable of providing a high quality picture in a low price. The voltage is applied to the scan and data driving circuits may considerably decrease through the tin film transistor attached to each pixel. The field emission characteristics are stabilized by the resistor attached to the field emission device so that reliable field emission display may be fabricated. Further, since all the processes are carried out at a low temperature, a glass, which is low in price and has a large area, may be used as an insulating substrate.
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公开(公告)号：DE60329819D1
公开(公告)日：2009-12-10
申请号：DE60329819
申请日：2003-12-23
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SONG YOON HO , HWANG CHI SUN , CHUNG CHOONG HEUI , LEE JIN HO
Abstract: The present invention relates to a field emission display in which a gate plate having a gate hole and a gate electrode around the gate hole is formed between an anode plate having phosphor and a cathode plate having a field emitter and a control device for controlling field emission current, wherein the field emitter of the cathode plate is constructed to be opposite to the phosphor of the anode plate through the gate hole. According to the present invention, it is possible to significantly reduce the display row/column driving voltage by applying scan and data signals of the field emission display to the control device of each pixel, and the present invention is directed to improve the brightness of the field emission display in such a manner that the electric field necessary for field emission is applied through the gate electrode of the gate plate to freely control the distance between the anode plate and the cathode plate, so that a high voltage can be applied to the anode.
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Patent Agency Ranking
公开(公告)号：AT519218T
公开(公告)日：2011-08-15
申请号：AT05103645
申请日：2005-05-02
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SONG YOON HO , LEE JIN HO , HWANG CHI SUN
Abstract: Provided is a field emission display, which includes: a cathode portion (100) including row signal lines (120S) and column signal lines (120D) in a stripe form allowing matrix addressing to be carried out on a substrate (110), and pixels defined by the row signal lines and the column signal lines, each pixel having a field emitter (130) and a control device (140) which controls the field emitter with two terminals connected to at least the row signal line and the column signal line and one terminal connected to the field emitter; an anode portion (300) having an anode electrode, and a phosphor (330) connected to the anode electrode; and a gate portion (200) having a metal mesh (220) with a plurality of penetrating holes (210), and a dielectric layer (230) formed on at least one region of the metal mesh, wherein the gate portion (200) is disposed between the cathode portion (100) and the anode (300) portion to allow the surface where the dielectric layer is formed to be faced to the cathode portion and to allow electrons emitted from the field emitter to collide with the phosphor via the penetrating holes.
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公开(公告)号：FR2757676A1
公开(公告)日：1998-06-26
申请号：FR9711999
申请日：1997-09-26
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SONG YOON HO , LEE JIN HO , CHO KYOUNG IK , YOO HYUNG JOUN
IPC: H01J29/96 , G09F9/30 , G09G3/20 , G09G3/22 , H01J1/30 , H01J29/04 , H01J31/12 , H04N9/12 , H01J29/46
Abstract: The field emitter structure has upper and lower parallel plates made up of a network of pixels having several emitter mechanisms (21). Each mechanism has the grid electrode set to a constant voltage. The pixels are voltage fed by a sweep command circuit (30) commanded from digital words. A thin film transistor (22) applies the high voltage to the pixel network. The pixel network, sweep circuit, digital command and transistor thin film are integrated on a single substrate.
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公开(公告)号：CA2612337C
公开(公告)日：2011-04-26
申请号：CA2612337
申请日：2007-11-27
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIM DAE JUN , SONG YOON HO , JEONG JIN WOO
Abstract: Provided is a method of manufacturing a carbon nano-tube (CNT) for a field emission device (FED) into which a nano-sized metal particle is added to thereby highly increase reliability of an electron emission source ("emitter"). The method of manufacturing a CNT emitter includes the steps of: (a) dispersing a CNT powder, an organic binder, a photosensitive material, a monomer, and a nano-sized metal particle in a solvent to thereby manufacture a CNT paste; (b) coating the CNT paste onto an electrode formed over a substrate; (c) exposing the CNT paste coated on the electrode to thereby perform fine-patterning; (d) plasticizing the finely patterned CNT paste; and (e) processing a surface of the CNT paste such that the surface of the plasticized CNT paste is activated. According to the above configuration, the CNT emitter can be finely patterned to several µm. Also, since a plurality of CNT emitter regions may be formed within a single pixel, uniformity of the electron emission can be improved. In addition, the nano-sized metal particle is added as a metal filler of the CNT paste, so that the metal can be melted at a low temperature where the CNT does not deteriorate. Furthermore, adhesion to a cathode electrode of the CNT is enhanced, so that the reliability of the CNT emitter can be improved.
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公开(公告)号：CA2612337A1
公开(公告)日：2008-06-07
申请号：CA2612337
申请日：2007-11-27
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： JEONG JIN WOO , KIM DAE JUN , SONG YOON HO
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公开(公告)号：FR2728390A1
公开(公告)日：1996-06-21
申请号：FR9415630
申请日：1994-12-19
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SONG YOON HO , PARK KYUNG HO , NAM KEE SOO
IPC: H01L21/20 , H01L21/336 , H01L29/786 , H01L21/324
Abstract: A process for formation of a thin film transistor which can be usefully applied to a high picture quality active matrix liquid crystal display is disclosed. Particularly, a process for formation of an improved polysilicon thin film transistor is disclosed. In the process for formation of a polysilicon thin film transistor, the solid phase crystallization of a non-crystalline silicon is carried out under a high pressure oxygen atmosphere, and therefore, the solid phase crystallization time for a non-crystalline silicon is shortened so as to improve the productivity, and the grain size of the polysilicon is made more uniform so as improve the electrical characteristics of the TFT (thin film transistor).
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