公开(公告)号：JP2010050464A

公开(公告)日：2010-03-04

申请号：JP2009206036

申请日：2009-09-07

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/683 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H02N13/00

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: PROBLEM TO BE SOLVED: To provide a new improved method and a new improved apparatus for chucking and dechucking a workpiece electrostatically in a vacuum plasma processor. SOLUTION: A glass workpiece 32 processed in a vacuum plasma processing chamber 10 is dechucked by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. The chucking voltage during processing is controlled in response to chucking force and flow rate of a heat transfer fluid flowing to the chuck. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing. A peak current flowing through the chuck during workpiece lifting from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. An inert plasma in the chamber 10 removes a residual charge from the workpiece 32 after workpiece lifting from the chuck 30. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在真空等离子体处理器中静电吸附和去除工件的新的改进方法和新的改进的装置。 解决方案：在真空等离子体处理室10中处理的玻璃工件32通过在加工期间逐渐降低夹紧电压而被压缩，同时保持足够高的电压来夹紧工件。 响应于流入卡盘的传热流体的夹紧力和流量来控制加工期间的夹紧电压。 在加工结束时施加到卡盘的反极性电压有助于脱扣。 在加工结束时，工件温度保持在高值。 在卡盘的工件提升期间流过卡盘的峰值电流控制下一次脱扣操作期间的反极性电压的幅度和/或持续时间。 室10中的惰性等离子体在工件从卡盘30提起之后，从工件32中除去剩余的电荷。（C）2010，JPO＆INPIT

公开(公告)号：WO9934399B1

公开(公告)日：1999-08-26

申请号：PCT/US9827885

申请日：1998-12-31

Applicant: LAM RES CORP

Inventor： BALDWIN SCOTT K JR ,  BARNES MICHAEL S ,  HOLLAND JOHN P

IPC: H05H1/46 ,  C23C14/34 ,  H01J37/32

CPC classification number: H01J37/32477 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/34

Abstract: A plasma processor for a workpiece includes a coil for supplying an r.f. exciting field through a window to a plasma in a vacuum chamber. A powered non-magnetic metal member between the coil and plasma couples the field to the plasma. In first and second embodiments, the metal member is respectively (1) a plate abutting a face of the window inside the chamber and (2) a thin film on an interior face of the window. In a third embodiment, the plate and film are both used. All embodiments help to ignite the plasma. The second embodiment increases plasma stability and prevents window clouding by ionized plasma particles. Metal from the plate is sputtered as a deposit onto the workpiece. The third embodiment enables substantially simultaneous depositing and cleaning.

Abstract translation: 一种用于工件的等离子体处理器包括用于供应r.f的线圈。 激光场通过窗口到真空室中的等离子体。 线圈和等离子体之间的动力非磁性金属构件将场耦合到等离子体。 在第一和第二实施例中，金属构件分别是（1）邻接室内的窗的表面的板和（2）在窗的内表面上的薄膜。 在第三实施例中，使用板和膜。 所有实施例都有助于点燃等离子体。 第二实施例增加等离子体稳定性并防止电离等离子体颗粒的窗玻璃化。 从板上的金属溅镀成沉积物。 第三实施例能够基本上同时进行存放和清洁。

公开(公告)号：WO0019519B1

公开(公告)日：2000-05-25

申请号：PCT/US9920615

申请日：1999-09-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/68

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: A glass workpiece processed in a vacuum plasma processing chamber is dechucked from a monopolar electrostatic chuck by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. The chucking voltage during processing is controlled in response to flow rate of a heat transfer fluid flowing to the chuck to maintain the chucking force and the flow rate approximately constant. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing to assisting in dechucking. Peak current flowing through the chuck during workpiece lifting from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. An inert plasma in the chamber removes residual charge from the workpiece after workpiece lifting from the chuck.

Abstract translation: 在真空等离子体处理室中处理的玻璃工件通过在处理过程中逐渐减小夹紧电压而从单极静电夹盘脱开，同时保持足够高的电压以夹紧工件。 加工过程中的夹紧电压响应于流向卡盘的传热流体的流量而被控制，以保持夹紧力和流量大致恒定。 在加工结束时施加在卡盘上的反向极性电压有助于去夹紧。 在加工结束时，工件温度保持在较高值，以帮助脱开夹紧。 在工件从卡盘上提升期间流过卡盘的峰值电流在下一次脱开操作期间控制反极性电压的幅度和/或持续时间。 工件从卡盘上提升后，腔室内的惰性等离子体会去除工件上的残余电荷。

公开(公告)号：JPH10125497A

公开(公告)日：1998-05-15

申请号：JP15271197

申请日：1997-06-10

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN P ,  BARNES MICHAEL S

IPC: H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which generates an electromagnetic field producing an almost uniform space plasma flux on a material to be processed by coupling a dispersed high frequency electric current with voltage in a coil. SOLUTION: A coil 24 exciting a plasma of a high frequency vacuum plasma processing apparatus for a surface of a material to be processed 32 in a chamber 10 is provided with a plurality of circular arc shaped windings extending to a radial direction. A magnetic flux having a extremely higher density is generated around the chamber 19 and the coil 24 rather than in the center part thereof and accordingly the coil 24, the chamber 10 and the sample material 32 are arranged so that the almost uniform plasma may be incident on the processed surface of the material 32.

公开(公告)号：JP2010021559A

公开(公告)日：2010-01-28

申请号：JP2009184433

申请日：2009-08-07

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: C23C16/458 ,  H01L21/683 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H02N13/00

CPC classification number: H01L21/67242 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10T307/858

Abstract: PROBLEM TO BE SOLVED: To provide an improved method and apparatus for electrostatically chucking and dechucking a workpiece in a vacuum plasma processor. SOLUTION: A glass workpiece 32 being processed in a vacuum plasma processing chamber is dechucked from a monopolar electrostatic chuck by gradually reducing chucking voltage during the processing while voltage is maintained high enough to clamp the workpiece. A reverse polarity voltage, which is applied to the chuck at a final step of the processing, assists the dechucking. The workpiece temperature is maintained at a high value at the final step of the processing in order to assist the dechucking. Peak current flowing through the chuck during lifting of the workpiece from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在真空等离子体处理器中静电夹持和去除工件的改进的方法和装置。 解决方案：在真空等离子体处理室中处理的玻璃工件32通过在处理期间逐渐减小夹持电压从单极静电卡盘中被拔出，同时电压保持足够高以夹紧工件。 在处理的最后步骤中施加到卡盘的反向极性电压有助于脱扣。 在加工的最后步骤中，工件温度保持在高的值，以帮助脱帽。 在从卡盘提起工件期间流过卡盘的峰值电流在下一个脱扣操作期间控制反向极性电压的幅度和/或持续时间。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010251768A

公开(公告)日：2010-11-04

申请号：JP2010114452

申请日：2010-05-18

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P ,  OLSON CHRISTOPHER

IPC: H01L21/3065 ,  H05H1/00 ,  C23F4/00 ,  H01J7/24 ,  H01J37/32 ,  H01L21/302 ,  H01L21/31 ,  H03H7/40 ,  H05B31/26 ,  H05H1/46

CPC classification number: H03H7/40 ,  H01J37/32082 ,  H01J37/32174

Abstract: PROBLEM TO BE SOLVED: To provide a method for suitably controlling plasma of a plasma processing apparatus. SOLUTION: A tendency for discontinuity to occur in the amount of power reflected back to the high-frequency bias source of a vacuum plasma processor is overcome by controlling the high-frequency bias source output power so that the power delivered to plasma 50 in a vacuum processing chamber remains substantially constant. The high-frequency bias source output power is changed much faster than changes in capacitors of a matching network 108 connecting the high-frequency bias power source to the electrode of a workpiece holder processor. The capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种适当地控制等离子体处理装置的等离子体的方法。 解决方案：通过控制高频偏置源输出功率来克服反射回到真空等离子体处理器的高频偏压源的功率量中的不连续性的趋势，使得输送到等离子体50的功率 在真空处理室中保持基本恒定。 高频偏置源输出功率比连接高频偏置电源与工件支架处理器的电极的匹配网络108的电容器的变化快得多。 通过光学测量腔室中的等离子体护套的厚度来确定等离子体的电容性阻抗分量。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010050463A

公开(公告)日：2010-03-04

申请号：JP2009206010

申请日：2009-09-07

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/683 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H02N13/00

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: PROBLEM TO BE SOLVED: To provide a dechucking method of an electrostatically chucked workpiece by preventing rupture and cracks. SOLUTION: A glass workpiece 32 is dechucked from a monopolar electrostatic chuck by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece in a plasma processing chamber. The chucking voltage during processing is controlled in response to flow rate of a heat transfer fluid flowing to the chuck to maintain the chucking force and the flow rate approximately constant. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing to assisting in dechucking. A peak current flowing through the chuck during workpiece lifting from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. An inert plasma in the chamber removes a residual charge from the workpiece after workpiece lifting from the chuck. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：通过防止破裂和裂纹来提供静电夹持工件的脱扣方法。 解决方案：通过在加工期间逐渐降低夹持电压，将玻璃工件32从单极静电卡盘中拔出，同时保持电压足够高以将工件夹紧在等离子体处理室中。 响应于流过卡盘的传热流体的流量来控制处理期间的夹紧电压，以保持卡紧力并且流速近似恒定。 在加工结束时施加到卡盘的反极性电压有助于脱扣。 在加工结束时，工件温度保持在高值，以帮助脱帽。 在卡盘的工件提升期间流过卡盘的峰值电流控制下一次脱扣操作期间的反极性电压的幅度和/或持续时间。 室内的惰性等离子体从卡盘上取出后，从工件中除去剩余的电荷。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010062570A

公开(公告)日：2010-03-18

申请号：JP2009205952

申请日：2009-09-07

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/683 ,  C23C16/458 ,  C23C16/50 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H02N13/00

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: PROBLEM TO BE SOLVED: To provide a reliable method and apparatus for electrostatically chucking and dechucking a workpiece in a vacuum plasma processor. SOLUTION: A glass workpiece 32 processed in a vacuum plasma processing chamber 10 is dechucked from a monopolar electrostatic chuck 30 by gradually reducing a chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. The chucking voltage during processing is controlled in response to a flow rate of a heat transfer fluid flowing to the chuck to maintain a chucking force and the flow rate substantially constant. A reverse polarity voltage applied to the chuck at an end of the processing assists in dechucking. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在真空等离子体处理器中静电吸附和脱扣工件的可靠方法和装置。 解决方案：在真空等离子体处理室10中处理的玻璃工件32通过在保持电压足够高以夹持工件的同时在加工期间逐渐降低夹持电压从单极静电卡盘30中被拔出。 响应于流向卡盘的传热流体的流量来控制加工期间的夹紧电压，以保持卡紧力并且流速基本上恒定。 在加工结束时施加到卡盘的反极性电压有助于脱扣。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：DE69738241D1

公开(公告)日：2007-12-06

申请号：DE69738241

申请日：1997-06-09

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN P ,  BARNES MICHAEL S

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302

公开(公告)号：DE69738241T2

公开(公告)日：2008-02-14

申请号：DE69738241

申请日：1997-06-09

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN P ,  BARNES MICHAEL S

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302