公开(公告)号：WO2008027216A9

公开(公告)日：2008-05-22

申请号：PCT/US2007018270

申请日：2007-08-17

Applicant: LAM RES CORP ,  DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

Inventor： DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

IPC: C23C16/00

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

Abstract translation: 这些实施例提供了产生金属对金属或硅 - 金属界面以提高电迁移性能，提供较低金属电阻率以及改善金属对金属或硅 - 金属的过程和集成系统 铜互连的界面粘合。 提供了一种制备衬底表面以在集成系统的铜表面上选择性地沉积钴合金材料薄层以提高铜互连的电迁移性能的示例性方法。 该方法包括从集成系统中的衬底表面去除污染物和金属氧化物，并且在去除集成系统中的污染物和金属氧化物之后，使用还原环境来修复衬底表面。 该方法还包括在修复基板表面之后，在集成系统中的铜互连的铜表面上选择性地沉积钴合金材料的薄层。 还提供了用于实践上述示例性方法的系统。

公开(公告)号：WO03096765A2

公开(公告)日：2003-11-20

申请号：PCT/US0313597

申请日：2003-05-01

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III ,  BERNEY BUTCH

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III ,  BERNEY BUTCH

IPC: H05H1/46 ,  C23C16/00 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/306 ,  H01L21/3065 ,  H05H1/00

CPC classification number: H01J37/32477 ,  H01J37/32623

Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

Abstract translation: 公开了一种用于处理基板以在其上形成电子部件的等离子体处理室。 等离子体处理室包括在处理基板期间在等离子体处理室中具有朝向等离子体的等离子体面向表面的等离子体面向部件，等离子体面向部件与接地端子电隔离。 等离子体处理室还包括耦合到等离子体面向部件的接地装置，接地装置包括设置在等离子体面向部件和接地端子之间的第一电流路径中的第一电阻电路。 接地装置还包括设置在等离子体面向部件和接地端子之间的至少一个其它电流通路中的RF滤波器装置，其中选择第一电阻电路的电阻值以基本上消除等离子体和等离子体 - 在处理基板期间面对部件。

公开(公告)号：WO0124255A2

公开(公告)日：2001-04-05

申请号：PCT/US0026600

申请日：2000-09-27

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66

CPC classification number: B24B37/013 ,  H01J37/32935 ,  H01L22/26

Abstract: A method for monitoring a device fabrication process. The method includes etching into a wafer disposed inside a chamber and detecting the intensity of a portion of a light reflected from a surface of the wafer and further scattered at a scattering inside surface of the chamber.

Abstract translation: 一种监测器件制造工艺的方法。 该方法包括蚀刻设置在室内的晶片，并检测从晶片表面反射的一部分光的强度，并进一步在室的散射内表面散射。

公开(公告)号：WO2006071816A3

公开(公告)日：2007-02-22

申请号：PCT/US2005046930

申请日：2005-12-22

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  NI TUQIANG

Inventor： HOWALD ARTHUR M ,  NI TUQIANG

IPC: C23F1/00 ,  C23C16/505 ,  H01L21/3065

CPC classification number: H01J37/321 ,  C23F4/00 ,  H01J37/32477

Abstract: An inductively coupled plasma processing apparatus includes a chamber (100) having a top opening. A window (16) seals the top opening of the chamber, and the window has an inner surface that is exposed to an internal region of the chamber. A window protector (20) for protecting the inner surface of the window is disposed within the chamber. The window protector (20) is configured to prevent conductive etch byproducts from being deposited on the inner surface of the window in the form of a continuous loop. In one alternative embodiment, a plurality of window protectors (20') is affixed to the inner surface of the window. In another embodiment, the window has a plurality of T-shaped or dovetail slots formed therein. In yet another embodiment, a plurality of rectangular slots is formed in the window and a window protector having corresponding slots is mounted against the inner surface of the window.

Abstract translation: 电感耦合等离子体处理装置包括具有顶部开口的室（100）。 窗口（16）密封室的顶部开口，并且窗口具有暴露于室的内部区域的内表面。 用于保护窗的内表面的窗保护器（20）设置在室内。 窗保护器（20）被配置为防止导电蚀刻副产物以连续环形式沉积在窗的内表面上。 在一个替代实施例中，多个窗保护器（20'）固定到窗的内表面。 在另一个实施例中，窗口具有形成在其中的多个T形或燕尾槽。 在另一个实施例中，在窗口中形成多个矩形槽，并且具有相应槽的窗保护器安装在窗的内表面上。

公开(公告)号：WO0019519B1

公开(公告)日：2000-05-25

申请号：PCT/US9920615

申请日：1999-09-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/68

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: A glass workpiece processed in a vacuum plasma processing chamber is dechucked from a monopolar electrostatic chuck by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. The chucking voltage during processing is controlled in response to flow rate of a heat transfer fluid flowing to the chuck to maintain the chucking force and the flow rate approximately constant. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing to assisting in dechucking. Peak current flowing through the chuck during workpiece lifting from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. An inert plasma in the chamber removes residual charge from the workpiece after workpiece lifting from the chuck.

Abstract translation: 在真空等离子体处理室中处理的玻璃工件通过在处理过程中逐渐减小夹紧电压而从单极静电夹盘脱开，同时保持足够高的电压以夹紧工件。 加工过程中的夹紧电压响应于流向卡盘的传热流体的流量而被控制，以保持夹紧力和流量大致恒定。 在加工结束时施加在卡盘上的反向极性电压有助于去夹紧。 在加工结束时，工件温度保持在较高值，以帮助脱开夹紧。 在工件从卡盘上提升期间流过卡盘的峰值电流在下一次脱开操作期间控制反极性电压的幅度和/或持续时间。 工件从卡盘上提升后，腔室内的惰性等离子体会去除工件上的残余电荷。

公开(公告)号：JP2010050464A

公开(公告)日：2010-03-04

申请号：JP2009206036

申请日：2009-09-07

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/683 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H02N13/00

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: PROBLEM TO BE SOLVED: To provide a new improved method and a new improved apparatus for chucking and dechucking a workpiece electrostatically in a vacuum plasma processor. SOLUTION: A glass workpiece 32 processed in a vacuum plasma processing chamber 10 is dechucked by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. The chucking voltage during processing is controlled in response to chucking force and flow rate of a heat transfer fluid flowing to the chuck. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing. A peak current flowing through the chuck during workpiece lifting from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. An inert plasma in the chamber 10 removes a residual charge from the workpiece 32 after workpiece lifting from the chuck 30. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在真空等离子体处理器中静电吸附和去除工件的新的改进方法和新的改进的装置。 解决方案：在真空等离子体处理室10中处理的玻璃工件32通过在加工期间逐渐降低夹紧电压而被压缩，同时保持足够高的电压来夹紧工件。 响应于流入卡盘的传热流体的夹紧力和流量来控制加工期间的夹紧电压。 在加工结束时施加到卡盘的反极性电压有助于脱扣。 在加工结束时，工件温度保持在高值。 在卡盘的工件提升期间流过卡盘的峰值电流控制下一次脱扣操作期间的反极性电压的幅度和/或持续时间。 室10中的惰性等离子体在工件从卡盘30提起之后，从工件32中除去剩余的电荷。（C）2010，JPO＆INPIT

公开(公告)号：JP2010062570A

公开(公告)日：2010-03-18

申请号：JP2009205952

申请日：2009-09-07

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/683 ,  C23C16/458 ,  C23C16/50 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H02N13/00

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: PROBLEM TO BE SOLVED: To provide a reliable method and apparatus for electrostatically chucking and dechucking a workpiece in a vacuum plasma processor. SOLUTION: A glass workpiece 32 processed in a vacuum plasma processing chamber 10 is dechucked from a monopolar electrostatic chuck 30 by gradually reducing a chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. The chucking voltage during processing is controlled in response to a flow rate of a heat transfer fluid flowing to the chuck to maintain a chucking force and the flow rate substantially constant. A reverse polarity voltage applied to the chuck at an end of the processing assists in dechucking. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在真空等离子体处理器中静电吸附和脱扣工件的可靠方法和装置。 解决方案：在真空等离子体处理室10中处理的玻璃工件32通过在保持电压足够高以夹持工件的同时在加工期间逐渐降低夹持电压从单极静电卡盘30中被拔出。 响应于流向卡盘的传热流体的流量来控制加工期间的夹紧电压，以保持卡紧力并且流速基本上恒定。 在加工结束时施加到卡盘的反极性电压有助于脱扣。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010021559A

公开(公告)日：2010-01-28

申请号：JP2009184433

申请日：2009-08-07

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: C23C16/458 ,  H01L21/683 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H02N13/00

CPC classification number: H01L21/67242 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10T307/858

Abstract: PROBLEM TO BE SOLVED: To provide an improved method and apparatus for electrostatically chucking and dechucking a workpiece in a vacuum plasma processor. SOLUTION: A glass workpiece 32 being processed in a vacuum plasma processing chamber is dechucked from a monopolar electrostatic chuck by gradually reducing chucking voltage during the processing while voltage is maintained high enough to clamp the workpiece. A reverse polarity voltage, which is applied to the chuck at a final step of the processing, assists the dechucking. The workpiece temperature is maintained at a high value at the final step of the processing in order to assist the dechucking. Peak current flowing through the chuck during lifting of the workpiece from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在真空等离子体处理器中静电夹持和去除工件的改进的方法和装置。 解决方案：在真空等离子体处理室中处理的玻璃工件32通过在处理期间逐渐减小夹持电压从单极静电卡盘中被拔出，同时电压保持足够高以夹紧工件。 在处理的最后步骤中施加到卡盘的反向极性电压有助于脱扣。 在加工的最后步骤中，工件温度保持在高的值，以帮助脱帽。 在从卡盘提起工件期间流过卡盘的峰值电流在下一个脱扣操作期间控制反向极性电压的幅度和/或持续时间。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO2009045864A3

公开(公告)日：2009-05-22

申请号：PCT/US2008077764

申请日：2008-09-26

Applicant: LAM RES CORP ,  DORDI YEZDI N ,  HOWALD ARTHUR M

Inventor： DORDI YEZDI N ,  HOWALD ARTHUR M

IPC: H01L21/302

CPC classification number: H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76883

Abstract: An integrated process for forming metallization layers for electronic devices that use damascene structures that include low-k dielectric and metal. According to one embodiment of the present invention, the integrated process includes planarizing a gapfill metal in low-k dielectric structures, generating a protective layer on the low-k dielectric followed by cleaning the surface of the gapfill metal. Another embodiment of the present invention includes a method of protecting low-k dielectrics such as carbon doped silicon oxide.

Abstract translation: 一种用于形成使用包括低k电介质和金属的镶嵌结构的电子器件的金属化层的集成方法。 根据本发明的一个实施例，集成工艺包括平面化低k电介质结构中的间隙填充金属，在低k电介质上产生保护层，然后清洁间隙填充金属的表面。 本发明的另一个实施方案包括保护低k电介质如碳掺杂氧化硅的方法。

公开(公告)号：WO2008027386A3

公开(公告)日：2008-08-21

申请号：PCT/US2007018924

申请日：2007-08-28

Applicant: LAM RES CORP ,  BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID

Inventor： BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID

IPC: H01L21/00 ,  H01L21/20

CPC classification number: H01L21/67184 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/67745

Abstract: A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate

Abstract translation: 一种集群架构，包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。实验室环境受控传输模块和一个或多个湿衬底处理模块管理第一环境环境，其具有耦合到 实验室环境控制转移模块和一个或多个等离子体处理模块真空转移模块和一个或多个等离子体处理模块管理第二周围环境。耦合到真空转移模块的受控环境转移模块和一个或多个环境处理模块管理 第三环境环境因此，集群体系结构能够在第一，第二或第三环境环境中进行衬底的受控处理，以及重复相关的过渡。实施例还提供用于填充衬底的沟槽的有效方法