公开(公告)号：MY190580A

公开(公告)日：2022-04-27

申请号：MYPI2010001857

申请日：2010-04-23

Applicant: MIMOS BERHAD

Inventor： SITI AISHAH MOHAMAD BADARUDDIN ,  TEH AUN SHIH ,  BIEN CHIA SHENG

IPC: G01N27/40 ,  B01D35/00

Abstract: The filter device (100) of the present invention comprises at least one channel (60) or trench structure formed within a substrate (20) for accommodating or supporting a predetermined amount of silicon nanowires (40) which are provided by means of in-situ growth within said channel (60). These nanowires are grown in a free standing manner within the trench structure of channel (60). An encapsulation layer (80) primarily to confine the trench structure which functions (60) is further disposed therein. A catalyst permits the growth of nanowires, whereby the catalyst may be deposited within the channel by means of physical vapour deposition, chemically or by means of self assembly.