Abstract:
The filter device (100) of the present invention comprises at least one channel (60) or trench structure formed within a substrate (20) for accommodating or supporting a predetermined amount of silicon nanowires (40) which are provided by means of in-situ growth within said channel (60). These nanowires are grown in a free standing manner within the trench structure of channel (60). An encapsulation layer (80) primarily to confine the trench structure which functions (60) is further disposed therein. A catalyst permits the growth of nanowires, whereby the catalyst may be deposited within the channel by means of physical vapour deposition, chemically or by means of self assembly.
Abstract:
The present invention relates to a piezoresistive pressure sensor which detects applied pressure by measuring the change of electrical conductivity of the magnetic nanoparticles (3) in response to the application of mechanical stress onto the diaphragm (1). The pressure sensor comprises conductive electrodes (2) formed on the diaphragm (1) which is provided on a substrate (4). Magnetic nanoparticles (3) are deposited on the conductive electrodes (2) for electrically connecting the conductive electrodes (2) and changing electrical conductivity when stress is applied.
Abstract:
A method of fabricating a gas sensor with a conductive sensing element on a microhotplate (102) is provided, the method includes the steps of fabricating a microhotplate (102) on silicon, fabricating a nanostructured sensor on the microhotplate (102) by growing of conductive nanotubes (110) or nanowires with metal catalyst and functionalising the conductive nanotubes or nanowires, wherein step the nanotubes (110) or nanowires are functionalised with metal oxides selected from a group consisting and not limited to tin oxide (SnO2), tungsten oxide (WOx), tantalum pent-oxide (Ta2O5), aluminium oxide (Al2O3) copper oxide (CuO), iron oxide (Fe2O3), titanium oxide (TiO), Neodymium Oxide (Nd2O3) and zinc oxide (ZnO). (Figure 2)
Abstract:
A method of fabricating a resistive gas sensor device is provided, the method includes the steps of, depositing an insulating layer (105) on a silicon substrate layer (101) and depositing a conductive metal layer (103) onto the insulating layer (105), characterized in that, the method further includes the steps of depositing a thin metallic catalyst layer (107) covering a surface of the conductive metal layer (103) and etching the metal catalyst layer (107) and growing nanostructures (109) from the metal catalyst layer (107) that is exposed, such that the nanostructures (109) are interconnected with each other and the conductive metal layer (103).
Abstract:
THE PRESENT INVENTION PROVIDES A DEVICE WITH CARBON NANOTUBES WHEREIN THE NANOTUBES [20] ARE GROWN VERTICALLY ONTO THE SUBSTRATE SURFACE AND IN-BETWEEN THE FINGERS OF AN INTERDIGITAL STRUCTURE. THE COMPLETED ARRAY OF CONDUCTIVE INTERDIGITATED FINGERS WITH A PLURALITY OF THE VERTICAL CARBON NANOTUBES ARE THEN INTEGRATED AS AN INTERDIGITAL DEVICE WHERE THIS DEVICE OPERATES BASED ON THE FRINGING ELECTRIC FIELD EFFECTS. AT LEAST TWO CONDUCTIVE FINGERS [22] SPACED APART ACT AS ELECTRODES OF CAPACITOR. A PLURALITY OF CARBON NANOTUBES [20] IS VERTICALLY FORMED ON TOP OF CONDUCTIVE FINGERS OR BETWEEN CONDUCTIVE FINGERS. CARBON NANOTUBES HAVE PERMITTIVITY WHICH CHANGES ACCORDING TO ENVIRONMENT, HENCE AFFECTING CAPACITANCE MEASURED. DIFFERENT EMBODIMENTS OF DEVICE HAVING THE NANOTUBES PLACED IN TRENCH ARE SHOWN. THE CARBON NANOTUBE INTERDIGITAL DEVICE CAN OPERATE AS A SENSOR FOR APPLICATION IN AREAS OF AGRICULTURE, AQUACULTURE, ENVIRONMENTAL MONITORING AND BIOMEDICAL.
Abstract:
A METHOD OF PRODUCING VERTICAL NANOWIRES USING SINGLE CATALYST MATERIAL IS PROVIDED, THE METHOD INCLUDES THE STEPS OF DEPOSITING AN INSULATING OXIDE OR NITRIDE LAYER (101) ON A SUBSTRATE (105) SURFACE, DEPOSITING A GOLD CATALYST LAYER (103) ON TOP OF THE INSULATING OXIDE OR NITRIDE LAYER (101), ANNEALING THE SUBSTRATE (105) WITH GOLD CATALYST AT TEMPERATURE ABOVE 350°C, SUCH THAT NANOPARTICLES ARE OF DIAMETER IN RANGE OF 1 TO 100 NM, GROWING ZINC OXIDE NANOWIRES FROM EXPOSED GOLD CATALYST BY CHEMICAL VAPOUR DEPOSITION (CVD) WITH DIETHYLZINC AS A PRECURSOR, AND GROWING SILICON NANOWIRES (107) FROM REMAINING GOLD CATALYST NANOPARTICLES WITH SILICON AS PRECURSOR, SUCH THAT VERTICAL TYPE ZINC OXIDE NANOWIRES ARE PRODUCED AND LATERALLY CONNECTED BY SILICON NANOWIRES (107) WHEREIN THE INSULATING OXIDE OR NITRIDE LAYER (101) IS NOT REQUIRED WHEN THE SUBSTRATE (105) IS INSULATIVE MATERIAL. THE MOST ILLUSTRATIVE DRAWING:
Abstract:
A NON-ENZYMATIC BIOSENSOR BASED ON SELECTIVE VOLTAMMETRY USING FUNCTIONALIZED HYBRID SOLGEL IN ITS ELECTRODE IS PROPOSED. A PREFERRED EMBODIMENT OF THE ELECTRODE COMPRISES A CONDUCTOR LAYER (3) WHICH IS DISPOSED ON A SUBSTRATE (2), CARBON NANOTUBES (CNT) (5) WHICH ARE DISPOSED ON AT LEAST A PORTION OF THE CONDUCTOR LAYER (3) SUCH THAT THE CNT’S BASAL (5A) AND DISTAL ENDS (5B) ARE RESPECTIVELY DISPOSED IN BETWEEN THE CONDUCTOR LAYER (3) AND A CNT-FERROCENE SOLGEL COMPOSITE (6) DEPOSITED ONTO THE DISTAL END (5B) OF THE CNT (5) WITHIN A DAM STRUCTURE (7). THE CONDUCTOR LAYER (3) MAY BE SILVER, PLATINUM, GOLD OR CARBON. PREFERABLY, A CATALYST SUPPORT (4) IS DEPOSITED ON THE SUBSTRATE (2) AND A LIQUID-FORM NICKEL CATALYST IS DEPOSITED ON THE CATALYST SUPPORT. THE CNT-FERROCENE SOLGEL COMPOSITE IS MADE BY VIGOROUSLY MIXING (BY WEIGHT) CNT 10-35%, TETRAETHYLORTHOSILICATE 20-40%, METHYLTRI-ETHOXYSILICON 20-40%, PHENYLTRIETHOXYSILICON 20-40%; AND FERROCENE 0.1 TO 10%. THE MIXTURE IS SONICATED FOR ABOUT 1 MINUTE AND THEN LEFT TO STAND FOR ABOUT 20 HOURS.
Abstract:
Method of fabricating a gas sensor with a conductive sensing element on a microhotplate (102) is provided, the method includes the steps of fabricating a microhotplate (102) on silicon, fabricating a nanostructured sensor on the microhotplate (102) by growing of conductive nanotubes (110) or nanowires with metal catalyst and functionalising the conductive nanotubes or nanowires, wherein step the nanotubes (110) or nanowires are functionalised with metal oxides as tin oxide (Sn02), tungsten oxide (WOx), tantalum pent-oxide (Ta205), aluminium oxide (AI203) copper oxide (CuO), iron oxide (Fe203), titanium oxide (TiO), Neodymium Oxide (Nd203) and zinc oxide (ZnO).
Abstract translation:提供了一种在微电子板(102)上制造具有导电感测元件的气体传感器的方法,该方法包括以下步骤:在硅上制造微孔板(102),通过生长导电纳米管(102),在微孔板(102)上制造纳米结构传感器 (110)或具有金属催化剂的纳米线并对导电纳米管或纳米线进行功能化,其中使用金属氧化物作为氧化锡(SnO 2),氧化钨(WO x),五氧化二钽(Ta2O5))功能化纳米管(110)或纳米线 ,氧化铝(Al 2 O 3)氧化铜(CuO),氧化铁(Fe 2 O 3),氧化钛(TiO),氧化钕(Nd 2 O 3)和氧化锌(ZnO)。
Abstract:
The present invention relates to an improvement in light receiving and emitting device, and more particularly to self-sustaining lighting device utilizing solar power. One of the advantages of the light receiving and emitting device of present invention is that a p-n junction solar photovoltaic cell combines with nanowires or nanotubes and hence increases the surface area for light absorption which subsequently improves the overall efficiency of the device. Another advantage of the present invention is that the emitted light from the LED is multi-directional, the light is re-absorbed in the photovoltaic cell layers to further increase the efficiency of the solar cell. The integrated LED can also be used as a photovoltaic cell during the day time to store the solar energy. When needed, the stored energy can be used to drive the LED, e.g. during night time, the energy can be used to power up the LED for illumination or billboard display purposes.