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公开(公告)号:MY190580A
公开(公告)日:2022-04-27
申请号:MYPI2010001857
申请日:2010-04-23
Applicant: MIMOS BERHAD
Inventor: SITI AISHAH MOHAMAD BADARUDDIN , TEH AUN SHIH , BIEN CHIA SHENG
Abstract: The filter device (100) of the present invention comprises at least one channel (60) or trench structure formed within a substrate (20) for accommodating or supporting a predetermined amount of silicon nanowires (40) which are provided by means of in-situ growth within said channel (60). These nanowires are grown in a free standing manner within the trench structure of channel (60). An encapsulation layer (80) primarily to confine the trench structure which functions (60) is further disposed therein. A catalyst permits the growth of nanowires, whereby the catalyst may be deposited within the channel by means of physical vapour deposition, chemically or by means of self assembly.