公开(公告)号：EP2973758A4

公开(公告)日：2016-10-05

申请号：EP14778656

申请日：2014-03-10

Applicant: PACIFIC LIGHT TECHNOLOGIES CORP

Inventor： HUGHES STEVEN M ,  KURTIN JUANITA N

IPC: C09K11/02 ,  H01L33/30

CPC classification number: H01L33/005 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/582 ,  C09K11/621 ,  C09K11/881 ,  H01L33/06 ,  H01L33/26 ,  H01L33/502

Abstract: Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, group I-III-VI semiconductor material at least partially surrounds the nano-crystalline core.

公开(公告)号：EP2973753A4

公开(公告)日：2016-11-02

申请号：EP14779929

申请日：2014-03-10

Applicant: PACIFIC LIGHT TECHNOLOGIES CORP

Inventor： HUGHES STEVEN M ,  KURTIN JUANITA N

IPC: C09K11/02 ,  H01L33/06 ,  H01L33/30

CPC classification number: C09K11/621 ,  C09K11/02 ,  C09K11/881 ,  H01L33/502

Abstract: Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, semiconductor material at least partially surrounds the nano-crystalline core. In one specific example, the nano-crystalline core/nano-crystalline shell pairing has a photoluminescence quantum yield (PLQY) of greater than 60%. In another specific example, the nano-crystalline core/nano-crystalline shell pairing is a Type I hetero-structure.

Abstract translation: 具有I-III-VI族材料纳米晶核的纳晶结晶核和纳米晶体壳对，以及制备具有I-III-VI族材料纳米晶核的纳米晶核和纳米晶体壳对的方法， 被描述。 在一个示例中，半导体结构包括由I-III-VI族半导体材料组成的纳米晶核。 由第二不同的半导体材料构成的纳米晶体壳至少部分地包围纳米晶核。 在一个具体实例中，纳米晶核/纳米晶体壳配对具有大于60％的光致发光量子产率（PLQY）。 在另一个具体实例中，纳米晶核/纳米晶体壳配对是I型杂结构。

公开(公告)号：EP2798037A4

公开(公告)日：2015-09-23

申请号：EP12847998

申请日：2012-09-14

Applicant: PACIFIC LIGHT TECHNOLOGIES CORP

Inventor： KURTIN JUANITA ,  REESE COLIN ,  THEOBALD BRIAN ,  MCLAUGHLIN NATHAN ,  CARILLO MATTHEW J ,  PARK OUN-HO ,  MASSON GEORGETA ,  HUGHES STEVEN M ,  MASSON GEORGETA

IPC: C09K11/02 ,  B82B1/00

CPC classification number: H01L33/502 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/007 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/10 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2004/80 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L33/005 ,  H01L33/06 ,  H01L33/56 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0083 ,  Y10S977/744 ,  Y10S977/774 ,  Y10S977/824 ,  Y10S977/89 ,  Y10S977/95

Abstract: Composites having semiconductor structures embedded in a matrix are described. In an example, a composite includes a matrix material. A plurality of semiconductor structures is embedded in the matrix material. Each semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. Each semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates each nanocrystalline shell and anisotropic nanocrystalline core pairing.

Abstract translation: 描述了具有嵌入在矩阵中的半导体结构的复合材料。 在一个实例中，复合材料包括基体材料。 多个半导体结构嵌入基体材料中。 每个半导体结构包括由第一半导体材料构成的各向异性纳米晶核。 每个半导体结构还包括由至少部分地围绕各向异性纳米晶核的第二不同的半导体材料组成的纳米晶体壳。 绝缘体层封装每个纳米晶体壳和各向异性纳米晶核心配对。