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公开(公告)号:DE60115110T2
公开(公告)日:2006-08-03
申请号:DE60115110
申请日:2001-01-03
Applicant: PIONEER CORP
Inventor: IWASAKI SHINGO , YAMADA TAKASHI , HATA TAKUYA , CHUMAN TAKASHI , NEGISHI NOBUYASU , SAKEMURA KAZUTO , YOSHIZAWA ATSUSHI , SATOH HIDEO , YOSHIKAWA TAKAMASA , OGASAWARA KIYOHIDE
Abstract: An electron-emitting device includes an electron source layer (12) made of a metal, a metal alloy or a semiconductor, an insulating layer (13) formed on the electron source layer and a metal thin film electrode (15) formed on the insulating layer. Electrons are emitted upon application of an electric field between the electron source layer and the metal thin film electrode. The insulating layer has at least one island region (14) which constitutes an electron-emitting section in which the film thickness of the insulating layer is gradually reduced. The electron-emitting device further includes a carbon region (40) made of carbon or a carbon compound on at least one of a top, bottom and inside of the island region.
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公开(公告)号:DE60115110D1
公开(公告)日:2005-12-29
申请号:DE60115110
申请日:2001-01-03
Applicant: PIONEER CORP
Inventor: IWASAKI SHINGO , YAMADA TAKASHI , HATA TAKUYA , CHUMAN TAKASHI , NEGISHI NOBUYASU , SAKEMURA KAZUTO , YOSHIZAWA ATSUSHI , SATOH HIDEO , YOSHIKAWA TAKAMASA , OGASAWARA KIYOHIDE
Abstract: An electron-emitting device includes an electron source layer (12) made of a metal, a metal alloy or a semiconductor, an insulating layer (13) formed on the electron source layer and a metal thin film electrode (15) formed on the insulating layer. Electrons are emitted upon application of an electric field between the electron source layer and the metal thin film electrode. The insulating layer has at least one island region (14) which constitutes an electron-emitting section in which the film thickness of the insulating layer is gradually reduced. The electron-emitting device further includes a carbon region (40) made of carbon or a carbon compound on at least one of a top, bottom and inside of the island region.
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公开(公告)号:DE69921044D1
公开(公告)日:2004-11-18
申请号:DE69921044
申请日:1999-08-06
Applicant: PIONEER CORP
Inventor: NEGISHI NOBUYASU , HATA TAKUYA , YOSHIZAWA ATSUSHI , SATOH HIDEO , YAMADA TAKASHI , CHUMAN TAKASHI , IWASAKI SHINGO , YOSHIKAWA TAKAMASA , ITO HIROSHI , OGASAWARA KIYOHIDE
Abstract: An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer is essentially composed of elements belonging to group IV and contains an additive of at least one material selected from atomic elements belonging to group III or V.
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公开(公告)号:DE60111582T2
公开(公告)日:2006-06-01
申请号:DE60111582
申请日:2001-01-03
Applicant: PIONEER CORP
Inventor: YOSHIKAWA TAKAMASA , SATOH HIDEO , YOSHIZAWA ATSUSHI , YAMADA TAKASHI , CHUMAN TAKASHI , NEGISHI NOBUYASU , IWASAKI SHINGO , SAKEMURA KAZUTO , HATA TAKUYA , OGASAWARA KIYOHIDE
Abstract: An image pickup device includes a pair of first and second substrate facing each other with a vacuum space interposed therebetween, and a plurality of electron-emitting devices provided over said first substrate and a photoconductive layer provided over said second substrate. Each electron-emitting device includes an insulating layer (13) deposited over an electron source layer (12) formed over an ohmic electrode (11); and a metal thin film electrode (15) deposited over said insulating layer. The insulating layer and said metal thin film electrode have an island region (14) of electron-emitting section in which their film thicknesses are gradually reduced toward said electron source layer.
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公开(公告)号:DE69921044T2
公开(公告)日:2005-11-17
申请号:DE69921044
申请日:1999-08-06
Applicant: PIONEER CORP
Inventor: NEGISHI NOBUYASU , HATA TAKUYA , YOSHIZAWA ATSUSHI , SATOH HIDEO , YAMADA TAKASHI , CHUMAN TAKASHI , IWASAKI SHINGO , YOSHIKAWA TAKAMASA , ITO HIROSHI , OGASAWARA KIYOHIDE
Abstract: An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer is essentially composed of elements belonging to group IV and contains an additive of at least one material selected from atomic elements belonging to group III or V.
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公开(公告)号:DE60025134D1
公开(公告)日:2006-02-02
申请号:DE60025134
申请日:2000-10-26
Applicant: PIONEER CORP TOKYO
Inventor: YOSHIKAWA TAKAMASA , CHUMAN TAKASHI , NEGISHI NOBUYASU , IWASAKI SHINGO , YAMADA TAKASHI , SAKEMURA KAZUTO , HATA TAKUYA , YOSHIZAWA ATSUSHI , SATOH HIDEO , OGASAWARA KIYOHIDE
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公开(公告)号:DE60111582D1
公开(公告)日:2005-07-28
申请号:DE60111582
申请日:2001-01-03
Applicant: PIONEER CORP
Inventor: YOSHIKAWA TAKAMASA , SATOH HIDEO , YOSHIZAWA ATSUSHI , YAMADA TAKASHI , CHUMAN TAKASHI , NEGISHI NOBUYASU , IWASAKI SHINGO , SAKEMURA KAZUTO , HATA TAKUYA , OGASAWARA KIYOHIDE
Abstract: An image pickup device includes a pair of first and second substrate facing each other with a vacuum space interposed therebetween, and a plurality of electron-emitting devices provided over said first substrate and a photoconductive layer provided over said second substrate. Each electron-emitting device includes an insulating layer (13) deposited over an electron source layer (12) formed over an ohmic electrode (11); and a metal thin film electrode (15) deposited over said insulating layer. The insulating layer and said metal thin film electrode have an island region (14) of electron-emitting section in which their film thicknesses are gradually reduced toward said electron source layer.
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公开(公告)号:DE60025134T2
公开(公告)日:2006-07-20
申请号:DE60025134
申请日:2000-10-26
Applicant: PIONEER CORP
Inventor: YOSHIKAWA TAKAMASA , CHUMAN TAKASHI , NEGISHI NOBUYASU , IWASAKI SHINGO , YAMADA TAKASHI , SAKEMURA KAZUTO , HATA TAKUYA , YOSHIZAWA ATSUSHI , SATOH HIDEO , OGASAWARA KIYOHIDE
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公开(公告)号:AU2002354424A1
公开(公告)日:2003-06-17
申请号:AU2002354424
申请日:2002-12-05
Applicant: PIONEER CORP
Inventor: NEGISHI NOBUYASU , YAMADA TAKASHI , YOSHIKAWA TAKAMASA , OGASAWARA KIYOHIDE , SATOH HIDEO , CHUMAN TAKASHI , IWASAKI SHINGO , SAKEMURA KAZUTO , HATA TAKUYA
Abstract: An electron emitting device includes an electron-supply layer made of at least one of silicon, a mixture containing silicon as a main component and a silicon compound in an amorphous phase, an insulator layer formed on the electron-supply layer and a thin-film metal electrode formed on the insulator layer. Electrons are emitted upon application of an electric field between the electron-supply layer and the thin-film metal electrode. The insulator layer has at least one island region that constitutes an electron emitting section in which the film thickness of the insulator layer is gradually reduced. The electron emitting device further includes a carbon region made of at least of carbon, a mixture containing carbon as a main component and a carbon compound on at least one of a top, bottom and inside of the island region. The island region has a crystalline region made of at least one of silicon, a mixture containing silicon as a main component and a silicon compound within the electron-supply layer in the minimum thickness portion or near thereto.
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