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公开(公告)号：WO2007043697A9
公开(公告)日：2007-06-07
申请号：PCT/JP2006320795
申请日：2006-10-12
Applicant: PIONEER CORP , NAKAMURA KENJI , HATA TAKUYA , YOSHIZAWA ATSUSHI
Inventor： NAKAMURA KENJI , HATA TAKUYA , YOSHIZAWA ATSUSHI
CPC classification number: H01L51/5088 , H01L27/3274 , H01L51/50 , H01L51/5096 , H01L51/5203 , H01L51/5296
Abstract: A light emitting device comprises an auxiliary electrode formed on a substrate, an insulation layer formed on the auxiliary electrode, a first electrode supported by the insulation layer, a carrier injection layer which is in contacting with the first electrode and formed of a carrier injective organic semiconductor material, a light emitting layer supported by the carrier injection layer, and a second electrode supported by the light emitting layer. Between the carrier injection layer and the light emitting layer, a carrier dispersion layer having a lower resistance than the carrier injection layer is provided. This realizes a light emitting element having preferable light emitting characteristics in a pixel.
Abstract translation: 一种发光器件，包括形成在衬底上的辅助电极，形成在辅助电极上的绝缘层，由绝缘层支撑的第一电极，与第一电极接触并由载体注入有机物形成的载流子注入层 半导体材料，由载流子注入层支撑的发光层和由发光层支撑的第二电极。 在载流子注入层和发光层之间设置具有比载流子注入层低的电阻的载流子分散层。 这实现了在像素中具有优选的发光特性的发光元件。
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公开(公告)号：WO2007043696A9
公开(公告)日：2007-06-07
申请号：PCT/JP2006320794
申请日：2006-10-12
Applicant: PIONEER CORP , HATA TAKUYA , NAKAMURA KENJI , YOSHIZAWA ATSUSHI
Inventor： HATA TAKUYA , NAKAMURA KENJI , YOSHIZAWA ATSUSHI
CPC classification number: H01L51/5203 , H01L27/3244 , H01L27/3295 , H01L51/52 , H01L51/5296
Abstract: Disclosed is a thin film semiconductor device comprising an auxiliary electrode arranged on a substrate, an insulating layer arranged on the auxiliary electrode, a first electrode supported by the insulating layer, a partition wall supported by the insulating layer, a semiconductor layer which is in contact with the first electrode and composed of a carrier-transporting semiconductor material, and a second electrode which is supported by the semiconductor layer and formed by a vapor deposition process. This thin film semiconductor device has good carrier injection efficiency.
Abstract translation: 公开了一种薄膜半导体器件，其包括布置在基板上的辅助电极，布置在辅助电极上的绝缘层，由绝缘层支撑的第一电极，由绝缘层支撑的分隔壁，接触的半导体层 与第一电极并且由载流子传输半导体材料组成，第二电极由半导体层支撑并通过气相沉积工艺形成。 该薄膜半导体器件具有良好的载流子注入效率。
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公开(公告)号：DE60111582T2
公开(公告)日：2006-06-01
申请号：DE60111582
申请日：2001-01-03
Applicant: PIONEER CORP
Inventor： YOSHIKAWA TAKAMASA , SATOH HIDEO , YOSHIZAWA ATSUSHI , YAMADA TAKASHI , CHUMAN TAKASHI , NEGISHI NOBUYASU , IWASAKI SHINGO , SAKEMURA KAZUTO , HATA TAKUYA , OGASAWARA KIYOHIDE
Abstract: An image pickup device includes a pair of first and second substrate facing each other with a vacuum space interposed therebetween, and a plurality of electron-emitting devices provided over said first substrate and a photoconductive layer provided over said second substrate. Each electron-emitting device includes an insulating layer (13) deposited over an electron source layer (12) formed over an ohmic electrode (11); and a metal thin film electrode (15) deposited over said insulating layer. The insulating layer and said metal thin film electrode have an island region (14) of electron-emitting section in which their film thicknesses are gradually reduced toward said electron source layer.
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公开(公告)号：DE60025134D1
公开(公告)日：2006-02-02
申请号：DE60025134
申请日：2000-10-26
Applicant: PIONEER CORP TOKYO
Inventor： YOSHIKAWA TAKAMASA , CHUMAN TAKASHI , NEGISHI NOBUYASU , IWASAKI SHINGO , YAMADA TAKASHI , SAKEMURA KAZUTO , HATA TAKUYA , YOSHIZAWA ATSUSHI , SATOH HIDEO , OGASAWARA KIYOHIDE
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公开(公告)号：DE60111582D1
公开(公告)日：2005-07-28
申请号：DE60111582
申请日：2001-01-03
Applicant: PIONEER CORP
Inventor： YOSHIKAWA TAKAMASA , SATOH HIDEO , YOSHIZAWA ATSUSHI , YAMADA TAKASHI , CHUMAN TAKASHI , NEGISHI NOBUYASU , IWASAKI SHINGO , SAKEMURA KAZUTO , HATA TAKUYA , OGASAWARA KIYOHIDE
Abstract: An image pickup device includes a pair of first and second substrate facing each other with a vacuum space interposed therebetween, and a plurality of electron-emitting devices provided over said first substrate and a photoconductive layer provided over said second substrate. Each electron-emitting device includes an insulating layer (13) deposited over an electron source layer (12) formed over an ohmic electrode (11); and a metal thin film electrode (15) deposited over said insulating layer. The insulating layer and said metal thin film electrode have an island region (14) of electron-emitting section in which their film thicknesses are gradually reduced toward said electron source layer.
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Patent Agency Ranking
公开(公告)号：DE60025134T2
公开(公告)日：2006-07-20
申请号：DE60025134
申请日：2000-10-26
Applicant: PIONEER CORP
Inventor： YOSHIKAWA TAKAMASA , CHUMAN TAKASHI , NEGISHI NOBUYASU , IWASAKI SHINGO , YAMADA TAKASHI , SAKEMURA KAZUTO , HATA TAKUYA , YOSHIZAWA ATSUSHI , SATOH HIDEO , OGASAWARA KIYOHIDE
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7.发明专利
公开(公告)号：AU2002354424A1
公开(公告)日：2003-06-17
申请号：AU2002354424
申请日：2002-12-05
Applicant: PIONEER CORP
Inventor： NEGISHI NOBUYASU , YAMADA TAKASHI , YOSHIKAWA TAKAMASA , OGASAWARA KIYOHIDE , SATOH HIDEO , CHUMAN TAKASHI , IWASAKI SHINGO , SAKEMURA KAZUTO , HATA TAKUYA
Abstract: An electron emitting device includes an electron-supply layer made of at least one of silicon, a mixture containing silicon as a main component and a silicon compound in an amorphous phase, an insulator layer formed on the electron-supply layer and a thin-film metal electrode formed on the insulator layer. Electrons are emitted upon application of an electric field between the electron-supply layer and the thin-film metal electrode. The insulator layer has at least one island region that constitutes an electron emitting section in which the film thickness of the insulator layer is gradually reduced. The electron emitting device further includes a carbon region made of at least of carbon, a mixture containing carbon as a main component and a carbon compound on at least one of a top, bottom and inside of the island region. The island region has a crystalline region made of at least one of silicon, a mixture containing silicon as a main component and a silicon compound within the electron-supply layer in the minimum thickness portion or near thereto.
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公开(公告)号：DE60303861D1
公开(公告)日：2006-05-04
申请号：DE60303861
申请日：2003-12-09
Applicant: PIONEER CORP
Inventor： CHUMAN TAKASHI , UCHIDA YOSHIHIKO , SATOH HIDEO , HATA TAKUYA , YOSHIZAWA ATSUSHI
Abstract: A mask assembly includes a frame and at least one linear element secured onto the frame. The linear elements define a masking part. The masking part has at least one opening. The openings are made by removing predetermined linear elements from those secured to the frame.
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公开(公告)号：DE69921044T2
公开(公告)日：2005-11-17
申请号：DE69921044
申请日：1999-08-06
Applicant: PIONEER CORP
Inventor： NEGISHI NOBUYASU , HATA TAKUYA , YOSHIZAWA ATSUSHI , SATOH HIDEO , YAMADA TAKASHI , CHUMAN TAKASHI , IWASAKI SHINGO , YOSHIKAWA TAKAMASA , ITO HIROSHI , OGASAWARA KIYOHIDE
Abstract: An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer is essentially composed of elements belonging to group IV and contains an additive of at least one material selected from atomic elements belonging to group III or V.
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公开(公告)号：AU2003264523A1
公开(公告)日：2004-04-23
申请号：AU2003264523
申请日：2003-09-19
Applicant: PIONEER CORP
Inventor： UCHIDA YOSHIHIKO , SATOH HIDEO , YANAGISAWA SHUUICHI , YOSHIZAWA ATSUSHI , CHUMAN TAKASHI , HATA TAKUYA
IPC: H01L51/50 , G09F9/30 , G09F9/46 , H01L27/32 , H01L51/52 , H04N13/00 , H05B33/10 , H05B33/12 , H05B33/14
Abstract: An image display device includes at least one transmissive display panel arranged at different depth positions in a direction normal to a display surface of the image display device. Each of the transmissive display panels includes a light-emitting layer that is sandwiched between a front side transmissive film and a rear side transmissive film. The rear side transmissive film has an interface with a maximum refractive index difference that causes an efficiency of light emitted from the light-emitting layer to become smaller than a front side light emission efficiency in the characteristics of light-emission efficiency, which changes with respect to a film thickness of the transmissive film due to optical interference.
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