ELECTRON EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS USING THE SAME

    公开(公告)号:AU2002354424A1

    公开(公告)日:2003-06-17

    申请号:AU2002354424

    申请日:2002-12-05

    Applicant: PIONEER CORP

    Abstract: An electron emitting device includes an electron-supply layer made of at least one of silicon, a mixture containing silicon as a main component and a silicon compound in an amorphous phase, an insulator layer formed on the electron-supply layer and a thin-film metal electrode formed on the insulator layer. Electrons are emitted upon application of an electric field between the electron-supply layer and the thin-film metal electrode. The insulator layer has at least one island region that constitutes an electron emitting section in which the film thickness of the insulator layer is gradually reduced. The electron emitting device further includes a carbon region made of at least of carbon, a mixture containing carbon as a main component and a carbon compound on at least one of a top, bottom and inside of the island region. The island region has a crystalline region made of at least one of silicon, a mixture containing silicon as a main component and a silicon compound within the electron-supply layer in the minimum thickness portion or near thereto.

    Optical recording medium
    10.
    发明专利

    公开(公告)号:HK1048388A1

    公开(公告)日:2003-03-28

    申请号:HK03100376

    申请日:2003-01-15

    Applicant: PIONEER CORP

    Abstract: Provided is an optical recording medium whose surface is not easily injured, particularly an optical recording medium which is not required to be put into a cartridge. The optical recording medium comprises a recording layer (2), a covering layer comprising a polymer material (3), and a protective layer (4) which are successively deposited, recording or reproducing wavelength for the medium being 420nm or less, the numerical aperture of an optical system for the medium being 0.74 or more, and light being radiated to the side of the protective layer to read out data in the recording layer. In the medium, the protective layer has a hardness of 1000kg/mm or more and a thickness of 4.66 mu m or less.

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