Abstract:
An electron emitting device is composed of a plurality of electron emitting elements. The electron emitting element is provided with a lower electrode (11) and an upper electrode (15) and emits an electron from an upper electrode side. In the electron emitting device, a space is formed between the electron emitting elements and the upper electrode extends over the space on a bridge part (15a). The space is formed by providing a through hole or a notched part (15a) on the bridge part, and etching a stacked body under the upper electrode by using the bridge part as a mask. The upper electrodes of the adjacent electron emitting elements are electrically connected by the bridge part without bringing the upper electrodes into contact with the electron emitting element side planes and a substrate. Therefore, a current path can be shortened and a possibility of disconnection can be reduced.
Abstract:
An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer is essentially composed of elements belonging to group IV and contains an additive of at least one material selected from atomic elements belonging to group III or V.
Abstract:
An image pickup device includes a pair of first and second substrate facing each other with a vacuum space interposed therebetween, and a plurality of electron-emitting devices provided over said first substrate and a photoconductive layer provided over said second substrate. Each electron-emitting device includes an insulating layer (13) deposited over an electron source layer (12) formed over an ohmic electrode (11); and a metal thin film electrode (15) deposited over said insulating layer. The insulating layer and said metal thin film electrode have an island region (14) of electron-emitting section in which their film thicknesses are gradually reduced toward said electron source layer.
Abstract:
An electron emitting device includes an electron-supply layer made of at least one of silicon, a mixture containing silicon as a main component and a silicon compound in an amorphous phase, an insulator layer formed on the electron-supply layer and a thin-film metal electrode formed on the insulator layer. Electrons are emitted upon application of an electric field between the electron-supply layer and the thin-film metal electrode. The insulator layer has at least one island region that constitutes an electron emitting section in which the film thickness of the insulator layer is gradually reduced. The electron emitting device further includes a carbon region made of at least of carbon, a mixture containing carbon as a main component and a carbon compound on at least one of a top, bottom and inside of the island region. The island region has a crystalline region made of at least one of silicon, a mixture containing silicon as a main component and a silicon compound within the electron-supply layer in the minimum thickness portion or near thereto.
Abstract:
An image pickup device includes a pair of first and second substrate facing each other with a vacuum space interposed therebetween, and a plurality of electron-emitting devices provided over said first substrate and a photoconductive layer provided over said second substrate. Each electron-emitting device includes an insulating layer (13) deposited over an electron source layer (12) formed over an ohmic electrode (11); and a metal thin film electrode (15) deposited over said insulating layer. The insulating layer and said metal thin film electrode have an island region (14) of electron-emitting section in which their film thicknesses are gradually reduced toward said electron source layer.
Abstract:
Provided is an optical recording medium whose surface is not easily injured, particularly an optical recording medium which is not required to be put into a cartridge. The optical recording medium comprises a recording layer (2), a covering layer comprising a polymer material (3), and a protective layer (4) which are successively deposited, recording or reproducing wavelength for the medium being 420nm or less, the numerical aperture of an optical system for the medium being 0.74 or more, and light being radiated to the side of the protective layer to read out data in the recording layer. In the medium, the protective layer has a hardness of 1000kg/mm or more and a thickness of 4.66 mu m or less.